These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
3. Improved analog switching characteristics of Ta Lee TS; Choi C Nanotechnology; 2022 Mar; 33(24):. PubMed ID: 35226891 [TBL] [Abstract][Full Text] [Related]
4. Sputtering-deposited amorphous SrVO Lee TJ; Kim SK; Seong TY Sci Rep; 2020 Apr; 10(1):5761. PubMed ID: 32238846 [TBL] [Abstract][Full Text] [Related]
5. Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon. Almadhoun MN; Speckbacher M; Olsen BC; Luber EJ; Sayed SY; Tornow M; Buriak JM Nano Lett; 2021 Mar; 21(6):2666-2674. PubMed ID: 33689381 [TBL] [Abstract][Full Text] [Related]
6. 1-Selector 1-Memristor Configuration with Multifunctional a-IGZO Memristive Devices Fabricated at Room Temperature. Li JC; Ma YX; Wu SH; Liu ZC; Ding PF; Dai D; Ding YT; Zhang YY; Huang Y; Lai PT; Wang YL ACS Appl Mater Interfaces; 2024 Apr; 16(14):17766-17777. PubMed ID: 38534058 [TBL] [Abstract][Full Text] [Related]
7. Definition of a Localized Conducting Path via Suppressed Charge Injection in Oxide Memristors for Stable Practical Hardware Neural Networks. Kim H; Lee J; Kim HW; Woo J; Kim MH; Lee SH ACS Appl Mater Interfaces; 2023 Oct; ():. PubMed ID: 37874750 [TBL] [Abstract][Full Text] [Related]
8. Reliable Memristive Synapses Based on Parylene-MoO Minnekhanov A; Matsukatova A; Trofimov A; Nesmelov A; Zavyalov S; Demin V; Emelyanov A ACS Appl Mater Interfaces; 2023 Nov; 15(47):54996-55008. PubMed ID: 37962902 [TBL] [Abstract][Full Text] [Related]
10. All Solution-Processed Inorganic, Multilevel Memristors Utilizing Liquid Metals Electrodes Suitable for Analog Computing. Zaheer M; Bacha AU; Nabi I; Lan J; Wang W; Shen M; Chen K; Zhang G; Zhou F; Lin L; Irshad M; Faridullah F; Arifeen A; Li Y ACS Omega; 2022 Nov; 7(45):40911-40919. PubMed ID: 36406554 [TBL] [Abstract][Full Text] [Related]
11. Polymeric Memristor Based Artificial Synapses with Ultra-Wide Operating Temperature. Li J; Qian Y; Li W; Yu S; Ke Y; Qian H; Lin YH; Hou CH; Shyue JJ; Zhou J; Chen Y; Xu J; Zhu J; Yi M; Huang W Adv Mater; 2023 Jun; 35(23):e2209728. PubMed ID: 36972150 [TBL] [Abstract][Full Text] [Related]
12. Vacancy-Engineered Nickel Ferrite Forming-Free Low-Voltage Resistive Switches for Neuromorphic Circuits. R RK; Kalaboukhov A; Weng YC; Rathod KN; Johansson T; Lindblad A; Kamalakar MV; Sarkar T ACS Appl Mater Interfaces; 2024 Apr; 16(15):19225-19234. PubMed ID: 38579143 [TBL] [Abstract][Full Text] [Related]
13. Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WO Cho Y; Kim J; Kang M; Kim S Materials (Basel); 2023 Feb; 16(4):. PubMed ID: 36837316 [TBL] [Abstract][Full Text] [Related]
14. 2D Amorphous GaO Moon S; Lee D; Park J; Kim J ACS Appl Mater Interfaces; 2023 Aug; 15(31):37687-37695. PubMed ID: 37498125 [TBL] [Abstract][Full Text] [Related]
16. In situ control of oxygen vacancies in TiO₂ by atomic layer deposition for resistive switching devices. Park SJ; Lee JP; Jang JS; Rhu H; Yu H; You BY; Kim CS; Kim KJ; Cho YJ; Baik S; Lee W Nanotechnology; 2013 Jul; 24(29):295202. PubMed ID: 23799660 [TBL] [Abstract][Full Text] [Related]
17. High Temperature CsPbBr Liu Z; Cheng P; Li Y; Kang R; Zhang Z; Zuo Z; Zhao J ACS Appl Mater Interfaces; 2021 Dec; 13(49):58885-58897. PubMed ID: 34870980 [TBL] [Abstract][Full Text] [Related]
18. Resistive switching modulation by incorporating thermally enhanced layer in HfO Li X; Feng Z; Zou J; Wu Z; Xu Z; Yang F; Zhu Y; Dai Y Nanotechnology; 2023 Nov; 35(3):. PubMed ID: 37852218 [TBL] [Abstract][Full Text] [Related]
19. Hybrid oxide brain-inspired neuromorphic devices for hardware implementation of artificial intelligence. Wang J; Zhuge X; Zhuge F Sci Technol Adv Mater; 2021 May; 22(1):326-344. PubMed ID: 34025215 [TBL] [Abstract][Full Text] [Related]
20. 3D-structured mesoporous silica memristors for neuromorphic switching and reservoir computing. Jaafar AH; Shao L; Dai P; Zhang T; Han Y; Beanland R; Kemp NT; Bartlett PN; Hector AL; Huang R Nanoscale; 2022 Dec; 14(46):17170-17181. PubMed ID: 36380717 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]