These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
188 related articles for article (PubMed ID: 36723041)
1. Impact of annealing temperature on the remanent polarization and tunneling electro-resistance of ferroelectric Al-doped HfO Kim J; Kwon O; Lim E; Kim D; Kim S Phys Chem Chem Phys; 2023 Feb; 25(6):4588-4597. PubMed ID: 36723041 [TBL] [Abstract][Full Text] [Related]
2. Si-Doped HfO Lee Y; Song S; Ham W; Ahn SE Materials (Basel); 2022 Mar; 15(6):. PubMed ID: 35329702 [TBL] [Abstract][Full Text] [Related]
3. Ferroelectric synaptic devices based on CMOS-compatible HfAlO Kim D; Kim J; Yun S; Lee J; Seo E; Kim S Nanoscale; 2023 May; 15(18):8366-8376. PubMed ID: 37092534 [TBL] [Abstract][Full Text] [Related]
4. Interlayer engineering for enhanced ferroelectric tunnel junction operations in HfO Min KK; Yu J; Kim Y; Lee JH; Kwon D; Park BG Nanotechnology; 2021 Sep; 32(49):. PubMed ID: 34404031 [TBL] [Abstract][Full Text] [Related]
5. The Doping Effect on the Intrinsic Ferroelectricity in Hafnium Oxide-Based Nano-Ferroelectric Devices. Li Z; Wei J; Meng J; Liu Y; Yu J; Wang T; Xu K; Liu P; Zhu H; Chen S; Sun QQ; Zhang DW; Chen L Nano Lett; 2023 May; 23(10):4675-4682. PubMed ID: 36913490 [TBL] [Abstract][Full Text] [Related]
6. Improved Ferroelectric Properties in Hf Zhao B; Yan Y; Bi J; Xu G; Xu Y; Yang X; Fan L; Liu M Nanomaterials (Basel); 2022 Aug; 12(17):. PubMed ID: 36080036 [TBL] [Abstract][Full Text] [Related]
7. The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO Goh Y; Jeon S Nanotechnology; 2018 Aug; 29(33):335201. PubMed ID: 29786620 [TBL] [Abstract][Full Text] [Related]
8. Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing. Ryu H; Wu H; Rao F; Zhu W Sci Rep; 2019 Dec; 9(1):20383. PubMed ID: 31892720 [TBL] [Abstract][Full Text] [Related]
9. Hafnium-doped zirconia ferroelectric thin films with excellent endurance at high polarization. Cao Y; Zhang W; Li Y Nanoscale; 2023 Jan; 15(3):1392-1401. PubMed ID: 36594335 [TBL] [Abstract][Full Text] [Related]
10. Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr:HfO Choi Y; Han C; Shin J; Moon S; Min J; Park H; Eom D; Lee J; Shin C Sensors (Basel); 2022 May; 22(11):. PubMed ID: 35684705 [TBL] [Abstract][Full Text] [Related]
11. Superior and stable ferroelectric properties of hafnium-zirconium-oxide thin films deposited Kim HB; Jung M; Oh Y; Lee SW; Suh D; Ahn JH Nanoscale; 2021 May; 13(18):8524-8530. PubMed ID: 33908540 [TBL] [Abstract][Full Text] [Related]
12. Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO Jang CH; Kim HS; Kim H; Cha HY Materials (Basel); 2022 Mar; 15(6):. PubMed ID: 35329549 [TBL] [Abstract][Full Text] [Related]
13. Experimental study of endurance characteristics of Al-doped HfO Choi Y; Shin J; Moon S; Min J; Han C; Shin C Nanotechnology; 2023 Feb; 34(18):. PubMed ID: 36724507 [TBL] [Abstract][Full Text] [Related]
14. Selector-less Ferroelectric Tunnel Junctions by Stress Engineering and an Imprinting Effect for High-Density Cross-Point Synapse Arrays. Goh Y; Hwang J; Kim M; Lee Y; Jung M; Jeon S ACS Appl Mater Interfaces; 2021 Dec; 13(49):59422-59430. PubMed ID: 34855347 [TBL] [Abstract][Full Text] [Related]
15. Effects of etching process and annealing temperature on the ferroelectric properties of atomic layer deposited Al-doped HfO Ku B; Ma Y; Han H; Xuan W; Choi C Nanotechnology; 2022 Jul; 33(42):. PubMed ID: 35767964 [TBL] [Abstract][Full Text] [Related]
16. Impact of asymmetric electrodes on ferroelectricity of sub-10 nm HZO thin films. Chen HY; Jiang YS; Chuang CH; Mo CL; Wang TY; Lin HC; Chen MJ Nanotechnology; 2023 Dec; 35(10):. PubMed ID: 37995361 [TBL] [Abstract][Full Text] [Related]
17. Enhanced Tunneling Electroresistance in Ferroelectric Tunnel Junctions due to the Reversible Metallization of the Barrier. Liu X; Burton JD; Tsymbal EY Phys Rev Lett; 2016 May; 116(19):197602. PubMed ID: 27232046 [TBL] [Abstract][Full Text] [Related]
18. Enhanced tunneling electroresistance through interfacial charge-modulated barrier in He S; Zou D J Phys Condens Matter; 2023 Dec; 36(11):. PubMed ID: 38056019 [TBL] [Abstract][Full Text] [Related]
19. Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf Athle R; Persson AEO; Irish A; Menon H; Timm R; Borg M ACS Appl Mater Interfaces; 2021 Mar; 13(9):11089-11095. PubMed ID: 33625827 [TBL] [Abstract][Full Text] [Related]
20. Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications. Joh H; Nam S; Jung M; Shin H; Cho SH; Jeon S ACS Appl Mater Interfaces; 2023 Oct; ():. PubMed ID: 37874546 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]