142 related articles for article (PubMed ID: 36873259)
1. Crystal and Electronic Structure of Oxygen Vacancy Stabilized Rhombohedral Hafnium Oxide.
Kaiser N; Song YJ; Vogel T; Piros E; Kim T; Schreyer P; Petzold S; Valentí R; Alff L
ACS Appl Electron Mater; 2023 Feb; 5(2):754-763. PubMed ID: 36873259
[TBL] [Abstract][Full Text] [Related]
2. Defect-Stabilized Substoichiometric Polymorphs of Hafnium Oxide with Semiconducting Properties.
Kaiser N; Vogel T; Zintler A; Petzold S; Arzumanov A; Piros E; Eilhardt R; Molina-Luna L; Alff L
ACS Appl Mater Interfaces; 2022 Jan; 14(1):1290-1303. PubMed ID: 34942076
[TBL] [Abstract][Full Text] [Related]
3. Hafnium Oxide (HfO
Banerjee W; Kashir A; Kamba S
Small; 2022 Jun; 18(23):e2107575. PubMed ID: 35510954
[TBL] [Abstract][Full Text] [Related]
4. Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide.
Lee J; Yang K; Kwon JY; Kim JE; Han DI; Lee DH; Yoon JH; Park MH
Nano Converg; 2023 Dec; 10(1):55. PubMed ID: 38038784
[TBL] [Abstract][Full Text] [Related]
5. Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO
Xu YD; Jiang YP; Tang XG; Liu QX; Tang Z; Li WH; Guo XB; Zhou YC
Nanomaterials (Basel); 2022 Dec; 13(1):. PubMed ID: 36615949
[TBL] [Abstract][Full Text] [Related]
6. Modelling of oxygen vacancy aggregates in monoclinic HfO2: can they contribute to conductive filament formation?
Bradley SR; Bersuker G; Shluger AL
J Phys Condens Matter; 2015 Oct; 27(41):415401. PubMed ID: 26414778
[TBL] [Abstract][Full Text] [Related]
7. Electron holography on HfO
Niu G; Schubert MA; Sharath SU; Zaumseil P; Vogel S; Wenger C; Hildebrandt E; Bhupathi S; Perez E; Alff L; Lehmann M; Schroeder T; Niermann T
Nanotechnology; 2017 May; 28(21):215702. PubMed ID: 28462907
[TBL] [Abstract][Full Text] [Related]
8. Multifunctional role of dysprosium in HfO
Kumar S; Rai SB; Rath C
Phys Chem Chem Phys; 2017 Jul; 19(29):18957-18967. PubMed ID: 28702525
[TBL] [Abstract][Full Text] [Related]
9. Determination of Hafnium Zirconium Oxide Interfacial Band Alignments Using Internal Photoemission Spectroscopy and X-ray Photoelectron Spectroscopy.
Jenkins MA; Holden KEK; Smith SW; Brumbach MT; Henry MD; Weiland C; Woicik JC; Jaszewski ST; Ihlefeld JF; Conley JF
ACS Appl Mater Interfaces; 2021 Mar; 13(12):14634-14643. PubMed ID: 33749229
[TBL] [Abstract][Full Text] [Related]
10. Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition.
Kukli K; Aarik L; Vinuesa G; Dueñas S; Castán H; García H; Kasikov A; Ritslaid P; Piirsoo HM; Aarik J
Materials (Basel); 2022 Jan; 15(3):. PubMed ID: 35160824
[TBL] [Abstract][Full Text] [Related]
11. Infrared Signatures for Phase Identification in Hafnium Oxide Thin Films.
Jaszewski ST; Calderon S; Shrestha B; Fields SS; Samanta A; Vega FJ; Minyard JD; Casamento JA; Maria JP; Podraza NJ; Dickey EC; Rappe AM; Beechem TE; Ihlefeld JF
ACS Nano; 2023 Dec; 17(23):23944-23954. PubMed ID: 38015799
[TBL] [Abstract][Full Text] [Related]
12. The origin of the exceptionally low activation energy of oxygen vacancy in tantalum pentoxide based resistive memory.
Hur JH
Sci Rep; 2019 Nov; 9(1):17019. PubMed ID: 31745150
[TBL] [Abstract][Full Text] [Related]
13. Remote Oxygen Scavenging of the Interfacial Oxide Layer in Ferroelectric Hafnium-Zirconium Oxide-Based Metal-Oxide-Semiconductor Structures.
Tasneem N; Kashyap H; Chae K; Park C; Lee PC; Lombardo SF; Afroze N; Tian M; Kumarasubramanian H; Hur J; Chen H; Chern W; Yu S; Bandaru P; Ravichandran J; Cho K; Kacher J; Kummel AC; Khan AI
ACS Appl Mater Interfaces; 2022 Sep; 14(38):43897-43906. PubMed ID: 36121320
[TBL] [Abstract][Full Text] [Related]
14. Effects of strain on the electronic, optical, and ferroelectric transition properties of HfO
Wu J
J Phys Condens Matter; 2021 Jun; 33(29):. PubMed ID: 33975286
[TBL] [Abstract][Full Text] [Related]
15. Crystal structure of monoclinic hafnia (HfO
Pathak S; Das P; Das T; Mandal G; Joseph B; Sahu M; Kaushik SD; Siruguri V
Acta Crystallogr C Struct Chem; 2020 Nov; 76(Pt 11):1034-1042. PubMed ID: 33148879
[TBL] [Abstract][Full Text] [Related]
16. Optical properties of oxygen vacancies in HfO
Papernov S; Brunsman MD; Oliver JB; Hoffman BN; Kozlov AA; Demos SG; Shvydky A; Cavalcante FHM; Yang L; Menoni CS; Roshanzadeh B; Boyd STP; Emmert LA; Rudolph W
Opt Express; 2018 Jun; 26(13):17608-17623. PubMed ID: 30119572
[TBL] [Abstract][Full Text] [Related]
17. Multi-Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration.
Lü W; Li C; Zheng L; Xiao J; Lin W; Li Q; Wang XR; Huang Z; Zeng S; Han K; Zhou W; Zeng K; Chen J; Ariando ; Cao W; Venkatesan T
Adv Mater; 2017 Jun; 29(24):. PubMed ID: 28439926
[TBL] [Abstract][Full Text] [Related]
18. Probing the solute-drag effect and its role in stabilizing the orthorhombic phase in bulk La-doped HfO
Banerjee D; Dey CC; Kumar R; Sewak R; Jha SN; Bhattacharyya D; Acharya R; Pujari PK
Phys Chem Chem Phys; 2021 Aug; 23(30):16258-16267. PubMed ID: 34309608
[TBL] [Abstract][Full Text] [Related]
19. Stabilizing the ferroelectric phase in HfO
Mittmann T; Michailow M; Lomenzo PD; Gärtner J; Falkowski M; Kersch A; Mikolajick T; Schroeder U
Nanoscale; 2021 Jan; 13(2):912-921. PubMed ID: 33367444
[TBL] [Abstract][Full Text] [Related]
20. Effect of Polarization Reversal in Ferroelectric TiN/Hf
Matveyev Y; Negrov D; Chernikova A; Lebedinskii Y; Kirtaev R; Zarubin S; Suvorova E; Gloskovskii A; Zenkevich A
ACS Appl Mater Interfaces; 2017 Dec; 9(49):43370-43376. PubMed ID: 29160064
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
