These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

145 related articles for article (PubMed ID: 36903040)

  • 1. Structural, Surface and Optical Studies of m- and c-Face AlN Crystals Grown by Physical Vapor Transport Method.
    Zhang S; Yang H; Wang L; Cheng H; Lu H; Yang Y; Wan L; Xu G; Feng ZC; Klein B; Ferguson IT; Sun W
    Materials (Basel); 2023 Feb; 16(5):. PubMed ID: 36903040
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Comparative Studies of c- and m-Plane AlN Seeds Grown by Physical Vapor Transport.
    Yao X; Kong Z; Liu S; Wang Y; Shao Y; Wu Y; Hao X
    Materials (Basel); 2022 Dec; 15(24):. PubMed ID: 36556598
    [TBL] [Abstract][Full Text] [Related]  

  • 3. The Physical Vapor Transport Method for Bulk AlN Crystal Growth.
    Chen WH; Qin ZY; Tian XY; Zhong XH; Sun ZH; Li BK; Zheng RS; Guo Y; Wu HL
    Molecules; 2019 Apr; 24(8):. PubMed ID: 31010239
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Strain-stress study of Al
    Feng Y; Saravade V; Chung TF; Dong Y; Zhou H; Kucukgok B; Ferguson IT; Lu N
    Sci Rep; 2019 Jul; 9(1):10172. PubMed ID: 31308418
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD.
    Wei W; Peng Y; Wang J; Farooq Saleem M; Wang W; Li L; Wang Y; Sun W
    Nanomaterials (Basel); 2021 Mar; 11(3):. PubMed ID: 33802171
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Structure and Optical Properties of AlN Crystals Grown by Metal Nitride Vapor Phase Epitaxy with Different V/III Ratios.
    Xie L; Zhang H; Xie X; Wang E; Lin X; Song Y; Liu G; Chen G
    ACS Omega; 2022 Jul; 7(27):23497-23502. PubMed ID: 35847283
    [TBL] [Abstract][Full Text] [Related]  

  • 7. High In-Plane Thermal Conductivity of Aluminum Nitride Thin Films.
    Hoque MSB; Koh YR; Braun JL; Mamun A; Liu Z; Huynh K; Liao ME; Hussain K; Cheng Z; Hoglund ER; Olson DH; Tomko JA; Aryana K; Galib R; Gaskins JT; Elahi MMM; Leseman ZC; Howe JM; Luo T; Graham S; Goorsky MS; Khan A; Hopkins PE
    ACS Nano; 2021 Jun; 15(6):9588-9599. PubMed ID: 33908771
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Simulation and Experiment for Growth of High-Quality and Large-Size AlN Seed Crystals by Spontaneous Nucleation.
    Qin Z; Chen W; Deng D; Sun Z; Li B; Zheng R; Wu H
    Sensors (Basel); 2020 Jul; 20(14):. PubMed ID: 32679816
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Bulk-like Intrinsic Phonon Thermal Conductivity of Micrometer-Thick AlN Films.
    Koh YR; Cheng Z; Mamun A; Bin Hoque MS; Liu Z; Bai T; Hussain K; Liao ME; Li R; Gaskins JT; Giri A; Tomko J; Braun JL; Gaevski M; Lee E; Yates L; Goorsky MS; Luo T; Khan A; Graham S; Hopkins PE
    ACS Appl Mater Interfaces; 2020 Jul; 12(26):29443-29450. PubMed ID: 32491824
    [TBL] [Abstract][Full Text] [Related]  

  • 10. X-ray characterization of physical-vapor-transport-grown bulk AlN single crystals.
    Wicht T; Müller S; Weingärtner R; Epelbaum B; Besendörfer S; Bläß U; Weisser M; Unruh T; Meissner E
    J Appl Crystallogr; 2020 Aug; 53(Pt 4):1080-1086. PubMed ID: 32788905
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Effect of Residual Oxygen Concentration on the Lattice Parameters of Aluminum Nitride Powder Prepared via Carbothermal Reduction Nitridation Reaction.
    Kim J; Ahn H; Kim SJ; Kim JY; Pee JH
    Materials (Basel); 2022 Dec; 15(24):. PubMed ID: 36556732
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Power Enhancement of 265 nm DUV-LED Flip-Chip by HVPE-AlN High-Temperature Annealing.
    Yue W; Liu R; Li P; Zhou X; Liu Y; Yang B; Liu Y; Wang X
    Micromachines (Basel); 2023 Feb; 14(2):. PubMed ID: 36838167
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Structural and optical properties of self-assembled AlN nanowires grown on SiO
    Gačević Ž; Grandal J; Guo Q; Kirste R; Varela M; Sitar Z; Sánchez García MA
    Nanotechnology; 2021 May; 32(19):195601. PubMed ID: 33535196
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Growth of Semi-Polar (101¯3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE.
    Li X; Zhao J; Liu T; Lu Y; Zhang J
    Materials (Basel); 2021 Mar; 14(7):. PubMed ID: 33807424
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Probing electron-phonon and phonon-phonon coupling in type-II Dirac semi-metal NiTe
    James MT; Mandal S; Sebastian NK; Mishra P; Ganesan R; Kumar PSA
    J Phys Condens Matter; 2023 Jan; 35(12):. PubMed ID: 36623321
    [TBL] [Abstract][Full Text] [Related]  

  • 16. [Low-temperature-dependent characteristics of Raman scattering in N-type 4H-SiC].
    Miao RX; Zhao P; Liu WH; Tang XY
    Guang Pu Xue Yu Guang Pu Fen Xi; 2014 Jan; 34(1):108-10. PubMed ID: 24783543
    [TBL] [Abstract][Full Text] [Related]  

  • 17. The Effect of the Crucible on the Temperature Distribution for the Growth of a Large Size AlN Single Crystal.
    Yu Y; Liu B; Tang X; Song B; Han P; Liu S; Gao B
    Materials (Basel); 2021 Dec; 15(1):. PubMed ID: 35009200
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Resonant Raman scattering of core-shell GaN/AlN nanowires.
    Cros A; Cristóbal AG; Hestroffer K; Daudin B; Wang J; Demangeot F; Péchou R
    Nanotechnology; 2020 Dec; 32(8):. PubMed ID: 33142269
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Optical and Structural Properties of Aluminum Nitride Epi-Films at Room and High Temperature.
    Yang Y; Liu Y; Wang L; Zhang S; Lu H; Peng Y; Wei W; Yang J; Feng ZC; Wan L; Klein B; Ferguson IT; Sun W
    Materials (Basel); 2023 Nov; 16(23):. PubMed ID: 38068186
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Optical, magnetic, and transport properties of two-dimensional III-nitride semiconductors (AlN, GaN, and InN) due to acoustic phonon scattering.
    Dan HK; Vinh PT; Hien ND
    Nanoscale Adv; 2024 Oct; 6(24):6253-64. PubMed ID: 39430304
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.