218 related articles for article (PubMed ID: 36926563)
21. Overview of emerging nonvolatile memory technologies.
Meena JS; Sze SM; Chand U; Tseng TY
Nanoscale Res Lett; 2014; 9(1):526. PubMed ID: 25278820
[TBL] [Abstract][Full Text] [Related]
22. Unraveling the Role of Polydopamines in Resistive Switching in Al/Polydopamine/Al Structure for Organic Resistive Random-Access Memory.
Yun J; Kim D
Polymers (Basel); 2022 Jul; 14(15):. PubMed ID: 35893959
[TBL] [Abstract][Full Text] [Related]
23. Graphene-based RRAM devices for neural computing.
R RT; Das RR; Reghuvaran C; James A
Front Neurosci; 2023; 17():1253075. PubMed ID: 37886675
[TBL] [Abstract][Full Text] [Related]
24. Monolithic 3D Integration of Analog RRAM-Based Computing-in-Memory and Sensor for Energy-Efficient Near-Sensor Computing.
Du Y; Tang J; Li Y; Xi Y; Li Y; Li J; Huang H; Qin Q; Zhang Q; Gao B; Deng N; Qian H; Wu H
Adv Mater; 2024 May; 36(22):e2302658. PubMed ID: 37652463
[TBL] [Abstract][Full Text] [Related]
25. Nonvolatile reconfigurable sequential logic in a HfO
Zhou YX; Li Y; Su YT; Wang ZR; Shih LY; Chang TC; Chang KC; Long SB; Sze SM; Miao XS
Nanoscale; 2017 May; 9(20):6649-6657. PubMed ID: 28261713
[TBL] [Abstract][Full Text] [Related]
26. Memristor-Based Artificial Chips.
Sun B; Chen Y; Zhou G; Cao Z; Yang C; Du J; Chen X; Shao J
ACS Nano; 2024 Jan; 18(1):14-27. PubMed ID: 38153841
[TBL] [Abstract][Full Text] [Related]
27. Multiscale Modeling for Application-Oriented Optimization of Resistive Random-Access Memory.
La Torraca P; Puglisi FM; Padovani A; Larcher L
Materials (Basel); 2019 Oct; 12(21):. PubMed ID: 31652682
[TBL] [Abstract][Full Text] [Related]
28. Sign backpropagation: An on-chip learning algorithm for analog RRAM neuromorphic computing systems.
Zhang Q; Wu H; Yao P; Zhang W; Gao B; Deng N; Qian H
Neural Netw; 2018 Dec; 108():217-223. PubMed ID: 30216871
[TBL] [Abstract][Full Text] [Related]
29. Ultra-High-Speed Accelerator Architecture for Convolutional Neural Network Based on Processing-in-Memory Using Resistive Random Access Memory.
Wang H; Wang J; Hu H; Li G; Hu S; Yu Q; Liu Z; Chen T; Zhou S; Liu Y
Sensors (Basel); 2023 Feb; 23(5):. PubMed ID: 36904605
[TBL] [Abstract][Full Text] [Related]
30. Emerging 2D Ferroelectric Devices for In-Sensor and In-Memory Computing.
Chen C; Zhou Y; Tong L; Pang Y; Xu J
Adv Mater; 2024 May; ():e2400332. PubMed ID: 38739927
[TBL] [Abstract][Full Text] [Related]
31. Halide Perovskites for Resistive Switching Memory.
Kang K; Hu W; Tang X
J Phys Chem Lett; 2021 Dec; 12(48):11673-11682. PubMed ID: 34842437
[TBL] [Abstract][Full Text] [Related]
32. Emerging 2D Memory Devices for In-Memory Computing.
Yin L; Cheng R; Wen Y; Liu C; He J
Adv Mater; 2021 Jul; 33(29):e2007081. PubMed ID: 34105195
[TBL] [Abstract][Full Text] [Related]
33. Sensing Circuit Design Techniques for RRAM in Advanced CMOS Technology Nodes.
Zhang D; Peng B; Zhao Y; Han Z; Hu Q; Liu X; Han Y; Yang H; Cheng J; Ding Q; Jiang H; Yang J; Lv H
Micromachines (Basel); 2021 Jul; 12(8):. PubMed ID: 34442535
[TBL] [Abstract][Full Text] [Related]
34. Dynamic computing random access memory.
Traversa FL; Bonani F; Pershin YV; Di Ventra M
Nanotechnology; 2014 Jul; 25(28):285201. PubMed ID: 24972387
[TBL] [Abstract][Full Text] [Related]
35. Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage.
Han ST; Zhou Y; Chen B; Wang C; Zhou L; Yan Y; Zhuang J; Sun Q; Zhang H; Roy VA
Small; 2016 Jan; 12(3):390-6. PubMed ID: 26578160
[TBL] [Abstract][Full Text] [Related]
36. Conductive Bridge Random Access Memory (CBRAM): Challenges and Opportunities for Memory and Neuromorphic Computing Applications.
Abbas H; Li J; Ang DS
Micromachines (Basel); 2022 Apr; 13(5):. PubMed ID: 35630191
[TBL] [Abstract][Full Text] [Related]
37. Temporal correlation detection using computational phase-change memory.
Sebastian A; Tuma T; Papandreou N; Le Gallo M; Kull L; Parnell T; Eleftheriou E
Nat Commun; 2017 Oct; 8(1):1115. PubMed ID: 29062022
[TBL] [Abstract][Full Text] [Related]
38. Electromagnetic Analysis of Vertical Resistive Memory with a Sub-nm Thick Electrode.
Alimkhanuly B; Kim S; Kim LW; Lee S
Nanomaterials (Basel); 2020 Aug; 10(9):. PubMed ID: 32825304
[TBL] [Abstract][Full Text] [Related]
39. Filament-Free Bulk Resistive Memory Enables Deterministic Analogue Switching.
Li Y; Fuller EJ; Sugar JD; Yoo S; Ashby DS; Bennett CH; Horton RD; Bartsch MS; Marinella MJ; Lu WD; Talin AA
Adv Mater; 2020 Nov; 32(45):e2003984. PubMed ID: 32964602
[TBL] [Abstract][Full Text] [Related]
40. Review of electrical stimulus methods of
Zhang Y; Wang C; Wu X
Nanoscale; 2022 Jul; 14(27):9542-9552. PubMed ID: 35762914
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]