These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

132 related articles for article (PubMed ID: 36940427)

  • 1. Electronic Properties of Vertically Stacked h-BN/B
    Chen R; Li Q; Zhang Q; Wang M; Fang W; Zhang Z; Yun F; Wang T; Hao Y
    ACS Appl Mater Interfaces; 2023 Mar; 15(12):16211-16220. PubMed ID: 36940427
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy.
    Liu J; Liu X; Xu X; Wang J; Li C; Wei H; Yang S; Zhu Q; Fan Y; Zhang X; Wang Z
    Nanoscale Res Lett; 2010 Jun; 5(8):1340-3. PubMed ID: 20676206
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Ternary Cu
    Jathar SB; Rondiya SR; Jadhav YA; Nilegave DS; Cross RW; Barma SV; Nasane MP; Gaware SA; Bade BR; Jadkar SR; Funde AM; Dzade NY
    Chem Mater; 2021 Mar; 33(6):1983-1993. PubMed ID: 33840893
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Valence band offset of InN/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy.
    Jia C; Chen Y; Guo Y; Liu X; Yang S; Zhang W; Wang Z
    Nanoscale Res Lett; 2011 Apr; 6(1):316. PubMed ID: 21711842
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy.
    Li Z; Zhang B; Wang J; Liu J; Liu X; Yang S; Zhu Q; Wang Z
    Nanoscale Res Lett; 2011 Mar; 6(1):193. PubMed ID: 21711731
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy.
    Shi K; Li DB; Song HP; Guo Y; Wang J; Xu XQ; Liu JM; Yang AL; Wei HY; Zhang B; Yang SY; Liu XL; Zhu QS; Wang ZG
    Nanoscale Res Lett; 2011 Dec; 6(1):50. PubMed ID: 27502672
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Revealing the electronic structure, heterojunction band offset and alignment of Cu
    Rondiya SR; Buldu DG; Brammertz G; Jadhav YA; Cross RW; Ghosh HN; Davies TE; Jadkar SR; Dzade NY; Vermang B
    Phys Chem Chem Phys; 2021 Apr; 23(15):9553-9560. PubMed ID: 33885069
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Photocatalytic properties and energy band offset of a tungsten disulfide/graphitic carbon nitride van der Waals heterojunction.
    Liu J; Hua E
    RSC Adv; 2020 Jan; 10(9):5260-5267. PubMed ID: 35498326
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Computational study of electronic properties of X-doped hexagonal boron nitride (h-BN): X = (Li, Be, Al, C, Si).
    Asif QUA; Hussain A; Kashif M; Tayyab M; Rafique HM
    J Mol Model; 2021 Oct; 27(11):319. PubMed ID: 34633542
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Towards P-Type Conduction in Hexagonal Boron Nitride: Doping Study and Electrical Measurements Analysis of hBN/AlGaN Heterojunctions.
    Mballo A; Srivastava A; Sundaram S; Vuong P; Karrakchou S; Halfaya Y; Gautier S; Voss PL; Ahaitouf A; Salvestrini JP; Ougazzaden A
    Nanomaterials (Basel); 2021 Jan; 11(1):. PubMed ID: 33467590
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Band offset and an ultra-fast response UV-VIS photodetector in γ-In
    Fang YX; Zhang H; Azad F; Wang SP; Ling FCC; Su SC
    RSC Adv; 2018 Aug; 8(52):29555-29561. PubMed ID: 35547303
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Interface Structure and Band Alignment of CZTS/CdS Heterojunction: An Experimental and First-Principles DFT Investigation.
    Rondiya S; Jadhav Y; Nasane M; Jadkar S; Dzade NY
    Materials (Basel); 2019 Dec; 12(24):. PubMed ID: 31817306
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Low-Temperature Direct Growth of Few-Layer Hexagonal Boron Nitride on Catalyst-Free Sapphire Substrates.
    Chen J; Wang G; Meng J; Cheng Y; Yin Z; Tian Y; Huang J; Zhang S; Wu J; Zhang X
    ACS Appl Mater Interfaces; 2022 Feb; 14(5):7004-7011. PubMed ID: 35080841
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Optimizing the Electronic Structure of In
    Gong Y; Yang Z; Lari L; Azaceta I; Lazarov VK; Zhang J; Xu X; Cheng Q; Zhang KHL
    ACS Appl Mater Interfaces; 2020 Nov; 12(47):53446-53453. PubMed ID: 33191725
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Enhancement of
    Kang Y; Chen L; Liu C; Tang X; Zhu X; Gao W; Yin H
    J Phys Condens Matter; 2022 Jul; 34(38):. PubMed ID: 35835090
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Hexagonal Boron Nitride-Graphene Heterostructures: Synthesis and Interfacial Properties.
    Li Q; Liu M; Zhang Y; Liu Z
    Small; 2016 Jan; 12(1):32-50. PubMed ID: 26439677
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Direct observation of carrier migration in heterojunctions to discuss the p-n and direct Z-scheme heterojunctions.
    Yang L; Zhou JP; Chen QW; Yang HD
    Nanotechnology; 2022 Jul; 33(42):. PubMed ID: 35817015
    [TBL] [Abstract][Full Text] [Related]  

  • 18. The electric field modulation of electronic properties in a type-II phosphorene/PbI
    Wei Y; Wang F; Zhang W; Zhang X
    Phys Chem Chem Phys; 2019 Apr; 21(15):7765-7772. PubMed ID: 30916052
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Preparation of Cu
    Zhu L; Cao X; Gong C; Jiang A; Cheng Y; Xiao J
    Materials (Basel); 2020 Apr; 13(8):. PubMed ID: 32316301
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Band Alignment of the CdS/Cu
    Nagai T; Shimamura T; Tanigawa K; Iwamoto Y; Hamada H; Ohta N; Kim S; Tampo H; Shibata H; Matsubara K; Niki S; Terada N
    ACS Appl Mater Interfaces; 2019 Jan; 11(4):4637-4648. PubMed ID: 30623638
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.