These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

129 related articles for article (PubMed ID: 36975178)

  • 1. Improving the intrinsic conductance of selective area grown in-plane InAs nanowires with a GaSb shell.
    Khelifi W; Coinon C; Berthe M; Troadec D; Patriarche G; Wallart X; Grandidier B; Desplanque L
    Nanotechnology; 2023 Apr; 34(26):. PubMed ID: 36975178
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Misfit dislocation free InAs/GaSb core-shell nanowires grown by molecular beam epitaxy.
    Rieger T; Grützmacher D; Lepsa MI
    Nanoscale; 2015 Jan; 7(1):356-64. PubMed ID: 25406991
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Selective-Area MOCVD Growth and Carrier-Transport-Type Control of InAs(Sb)/GaSb Core-Shell Nanowires.
    Ji X; Yang X; Du W; Pan H; Yang T
    Nano Lett; 2016 Dec; 16(12):7580-7587. PubMed ID: 27960521
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires.
    Luo N; Huang GY; Liao G; Ye LH; Xu HQ
    Sci Rep; 2016 Dec; 6():38698. PubMed ID: 27924856
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Selective area growth of in-plane InAs nanowires and nanowire networks on Si substrates by molecular-beam epitaxy.
    Liu L; Wen L; He F; Zhuo R; Pan D; Zhao J
    Nanotechnology; 2023 Nov; 35(6):. PubMed ID: 37944189
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Scanning Tunneling Spectroscopy on InAs-GaSb Esaki Diode Nanowire Devices during Operation.
    Persson O; Webb JL; Dick KA; Thelander C; Mikkelsen A; Timm R
    Nano Lett; 2015 Jun; 15(6):3684-91. PubMed ID: 25927249
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Selective area heteroepitaxy of GaSb on GaAs (001) for in-plane InAs nanowire achievement.
    Fahed M; Desplanque L; Troadec D; Patriarche G; Wallart X
    Nanotechnology; 2016 Dec; 27(50):505301. PubMed ID: 27861165
    [TBL] [Abstract][Full Text] [Related]  

  • 8. InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition.
    Ji X; Yang X; Du W; Pan H; Luo S; Ji H; Xu HQ; Yang T
    Nanotechnology; 2016 Jul; 27(27):275601. PubMed ID: 27232079
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Remote p-type Doping in GaSb/InAs Core-shell Nanowires.
    Ning F; Tang LM; Zhang Y; Chen KQ
    Sci Rep; 2015 Jun; 5():10813. PubMed ID: 26028535
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition.
    Ji X; Yang X; Yang T
    Nanoscale Res Lett; 2017 Dec; 12(1):428. PubMed ID: 28655220
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Growth of InAs/InP core-shell nanowires with various pure crystal structures.
    Gorji Ghalamestani S; Heurlin M; Wernersson LE; Lehmann S; Dick KA
    Nanotechnology; 2012 Jul; 23(28):285601. PubMed ID: 22717421
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Spin-Resolved Magneto-Tunneling and Giant Anisotropic
    Clericò V; Wójcik P; Vezzosi A; Rocci M; Demontis V; Zannier V; Díaz-Fernández Á; Díaz E; Bellani V; Domínguez-Adame F; Diez E; Sorba L; Bertoni A; Goldoni G; Rossella F
    Nano Lett; 2024 Jan; 24(3):790-796. PubMed ID: 38189790
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Selective GaSb radial growth on crystal phase engineered InAs nanowires.
    Namazi L; Nilsson M; Lehmann S; Thelander C; Dick KA
    Nanoscale; 2015 Jun; 7(23):10472-81. PubMed ID: 26006335
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Electrical properties of GaSb/InAsSb core/shell nanowires.
    Ganjipour B; Sepehri S; Dey AW; Tizno O; Borg BM; Dick KA; Samuelson L; Wernersson LE; Thelander C
    Nanotechnology; 2014 Oct; 25(42):425201. PubMed ID: 25264978
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Characterization of Ambipolar GaSb/InAs Core-Shell Nanowires by Thermovoltage Measurements.
    Gluschke JG; Leijnse M; Ganjipour B; Dick KA; Linke H; Thelander C
    ACS Nano; 2015 Jul; 9(7):7033-40. PubMed ID: 26090774
    [TBL] [Abstract][Full Text] [Related]  

  • 16. In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy.
    Bucamp A; Coinon C; Lepilliet S; Troadec D; Patriarche G; Diallo MH; Avramovic V; Haddadi K; Wallart X; Desplanque L
    Nanotechnology; 2022 Jan; 33(14):. PubMed ID: 34937011
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Molecular beam epitaxy growth of GaAs/InAs core-shell nanowires and fabrication of InAs nanotubes.
    Rieger T; Luysberg M; Schäpers T; Grützmacher D; Lepsa MI
    Nano Lett; 2012 Nov; 12(11):5559-64. PubMed ID: 23030380
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Wurtzite InP/InAs/InP core-shell nanowires emitting at telecommunication wavelengths on Si substrate.
    Alouane MH; Anufriev R; Chauvin N; Khmissi H; Naji K; Ilahi B; Maaref H; Patriarche G; Gendry M; Bru-Chevallier C
    Nanotechnology; 2011 Oct; 22(40):405702. PubMed ID: 21911925
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Diameter-tailored telecom-band luminescence in InP/InAs heterostructure nanowires grown on InP (111)B substrate with continuously-modulated diameter from microscale to nanoscale.
    Zhang G; Tateno K; Sogawa T; Gotoh H
    Nanotechnology; 2018 Apr; 29(15):155202. PubMed ID: 29376842
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires.
    Haas F; Sladek K; Winden A; von der Ahe M; Weirich TE; Rieger T; Lüth H; Grützmacher D; Schäpers T; Hardtdegen H
    Nanotechnology; 2013 Mar; 24(8):085603. PubMed ID: 23385879
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.