These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
214 related articles for article (PubMed ID: 36984926)
1. Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer. Hong KB; Peng CY; Lin WC; Chen KL; Chen SC; Kuo HC; Chang EY; Lin CH Micromachines (Basel); 2023 Feb; 14(3):. PubMed ID: 36984926 [TBL] [Abstract][Full Text] [Related]
2. Thermal property evaluation of a 2.5D integration method with device level microchannel direct cooling for a high-power GaN HEMT device. Lian T; Xia Y; Wang Z; Yang X; Fu Z; Kong X; Lin S; Ma S Microsyst Nanoeng; 2022; 8():119. PubMed ID: 36389055 [TBL] [Abstract][Full Text] [Related]
3. Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs. Guo H; Chen T; Shi S Micromachines (Basel); 2020 Jan; 11(1):. PubMed ID: 31936651 [TBL] [Abstract][Full Text] [Related]
4. Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al Chiu HC; Liu CH; Huang CR; Chiu CC; Wang HC; Kao HL; Lin SY; Chien FT Membranes (Basel); 2021 Sep; 11(10):. PubMed ID: 34677492 [TBL] [Abstract][Full Text] [Related]
5. Reliability Analysis of Flip-Chip Packaging GaN Chip with Nano-Silver Solder BUMP. Yan L; Liu P; Xu P; Tan L; Zhang Z Micromachines (Basel); 2023 Jun; 14(6):. PubMed ID: 37374830 [TBL] [Abstract][Full Text] [Related]
6. 32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication. Kim TK; Islam ABMH; Cha YJ; Kwak JS Nanomaterials (Basel); 2021 Nov; 11(11):. PubMed ID: 34835809 [TBL] [Abstract][Full Text] [Related]
7. Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study. Jang KW; Hwang IT; Kim HJ; Lee SH; Lim JW; Kim HS Micromachines (Basel); 2019 Dec; 11(1):. PubMed ID: 31906083 [TBL] [Abstract][Full Text] [Related]
8. Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates. Huang CR; Chiu HC; Liu CH; Wang HC; Kao HL; Chen CT; Chang KJ Membranes (Basel); 2021 Oct; 11(11):. PubMed ID: 34832077 [TBL] [Abstract][Full Text] [Related]
9. AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique. Liu XY; Zhao SX; Zhang LQ; Huang HF; Shi JS; Zhang CM; Lu HL; Wang PF; Zhang DW Nanoscale Res Lett; 2015; 10():109. PubMed ID: 25852404 [TBL] [Abstract][Full Text] [Related]
10. Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy. Wang H; Yuan C; Xin Y; Shi Y; Zhong Y; Huang Y; Lu G Micromachines (Basel); 2022 Mar; 13(3):. PubMed ID: 35334758 [TBL] [Abstract][Full Text] [Related]
11. Optical and Electrical Properties of AlGaN-Based High Electron Mobility Transistors and Photodetectors with AlGaN/AlN/GaN Channel-Stacking Structure. Lin CF; Huang KP; Wang HW; Chen KT; Wang CJ; Kao YC; Chen H; Lin YS ACS Omega; 2024 Jun; 9(23):25277-25282. PubMed ID: 38882064 [TBL] [Abstract][Full Text] [Related]
12. High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate. Huang YC; Chiu HC; Kao HL; Wang HC; Liu CH; Huang CR; Chen SW Micromachines (Basel); 2021 May; 12(5):. PubMed ID: 34062908 [TBL] [Abstract][Full Text] [Related]
13. Electrical and Thermal Characteristics of AlGaN/GaN HEMT Devices with Dual Metal Gate Structure: A Theoretical Investigation. Qu Y; Deng N; Yuan Y; Hu W; Liu H; Wu S; Wang H Materials (Basel); 2022 May; 15(11):. PubMed ID: 35683115 [TBL] [Abstract][Full Text] [Related]
14. High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates. Deng S; Wei J; Zhang C; Liao D; Sun T; Yang K; Xi L; Zhang B; Luo X Nanoscale Res Lett; 2022 Aug; 17(1):73. PubMed ID: 35951269 [TBL] [Abstract][Full Text] [Related]
15. Performance Enhancement in N Yang SK; Mazumder S; Wu ZG; Wang YH Materials (Basel); 2021 Mar; 14(6):. PubMed ID: 33801062 [TBL] [Abstract][Full Text] [Related]
16. Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review. Haziq M; Falina S; Manaf AA; Kawarada H; Syamsul M Micromachines (Basel); 2022 Dec; 13(12):. PubMed ID: 36557432 [TBL] [Abstract][Full Text] [Related]
17. Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs. Wang H; Shi Y; Xin Y; Liu C; Lu G; Huang Y Micromachines (Basel); 2022 Jan; 13(2):. PubMed ID: 35208300 [TBL] [Abstract][Full Text] [Related]
18. Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage. Xia X; Guo Z; Sun H Micromachines (Basel); 2021 Oct; 12(11):. PubMed ID: 34832730 [TBL] [Abstract][Full Text] [Related]
19. Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer. Zhu S; Jia H; Li T; Tong Y; Liang Y; Wang X; Zeng T; Yang Y Micromachines (Basel); 2019 Jul; 10(7):. PubMed ID: 31269635 [TBL] [Abstract][Full Text] [Related]
20. Impact of Gamma Radiation on Dynamic R Martínez PJ; Maset E; Martín-Holgado P; Morilla Y; Gilabert D; Sanchis-Kilders E Materials (Basel); 2019 Aug; 12(17):. PubMed ID: 31466249 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]