124 related articles for article (PubMed ID: 37013680)
1. Strain-induced ordered Ge(Si) hut wires on patterned Si (001) substrates.
Ming M; Gao F; Wang JH; Zhang JY; Wang T; Yao Y; Hu H; Zhang JJ
Nanoscale; 2023 Apr; 15(16):7311-7317. PubMed ID: 37013680
[TBL] [Abstract][Full Text] [Related]
2. Site-Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin-Orbit Coupling.
Gao F; Wang JH; Watzinger H; Hu H; Rančić MJ; Zhang JY; Wang T; Yao Y; Wang GL; Kukučka J; Vukušić L; Kloeffel C; Loss D; Liu F; Katsaros G; Zhang JJ
Adv Mater; 2020 Apr; 32(16):e1906523. PubMed ID: 32105375
[TBL] [Abstract][Full Text] [Related]
3. A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates.
Zhong Z; Gong H; Ma Y; Fan Y; Jiang Z
Nanoscale Res Lett; 2011 Apr; 6(1):322. PubMed ID: 21711814
[TBL] [Abstract][Full Text] [Related]
4. Towards promising modification of GeSi nanostructures via self-assembly on miscut Si(001) substrates.
Zhou T; Zhong Z
Nanotechnology; 2016 Mar; 27(11):115601. PubMed ID: 26871257
[TBL] [Abstract][Full Text] [Related]
5. Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001).
Wang JH; Wang T; Zhang JJ
Nanomaterials (Basel); 2021 Mar; 11(3):. PubMed ID: 33808713
[TBL] [Abstract][Full Text] [Related]
6. The fabrication and application of patterned Si(001) substrates with ordered pits via nanosphere lithography.
Chen P; Fan Y; Zhong Z
Nanotechnology; 2009 Mar; 20(9):095303. PubMed ID: 19417486
[TBL] [Abstract][Full Text] [Related]
7. Anisotropic
Zhang T; Liu H; Gao F; Xu G; Wang K; Zhang X; Cao G; Wang T; Zhang J; Hu X; Li HO; Guo GP
Nano Lett; 2021 May; 21(9):3835-3842. PubMed ID: 33914549
[TBL] [Abstract][Full Text] [Related]
8. Large-area ordered Ge-Si compound quantum dot molecules on dot-patterned Si (001) substrates.
Lei H; Zhou T; Wang S; Fan Y; Zhong Z
Nanotechnology; 2014 Aug; 25(34):345301. PubMed ID: 25078348
[TBL] [Abstract][Full Text] [Related]
9. Formation and characterization of multilayer GeSi nanowires on miscut Si (001) substrates.
Gong H; Chen P; Ma Y; Wang L; Rastelli A; Schmidt OG; Zhong Z
J Nanosci Nanotechnol; 2013 Feb; 13(2):834-8. PubMed ID: 23646525
[TBL] [Abstract][Full Text] [Related]
10. Misfit-guided self-organization of anticorrelated Ge quantum dot arrays on Si nanowires.
Kwon S; Chen ZC; Kim JH; Xiang J
Nano Lett; 2012 Sep; 12(9):4757-62. PubMed ID: 22889063
[TBL] [Abstract][Full Text] [Related]
11. Wafer-scale high-throughput ordered arrays of Si and coaxial Si/Si(1-x)Ge(x) wires: fabrication, characterization, and photovoltaic application.
Pan C; Luo Z; Xu C; Luo J; Liang R; Zhu G; Wu W; Guo W; Yan X; Xu J; Wang ZL; Zhu J
ACS Nano; 2011 Aug; 5(8):6629-36. PubMed ID: 21749059
[TBL] [Abstract][Full Text] [Related]
12. Growth of GeSi nanoislands on nanotip-patterned Si (100) substrates with a stress-induced self-limiting interdiffusion.
Tang R; Huang K; Lai H; Li C; Wu Z; Kang J
Nanoscale Res Lett; 2012 Jun; 7(1):346. PubMed ID: 22734613
[TBL] [Abstract][Full Text] [Related]
13. Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers.
Niu G; Capellini G; Schubert MA; Niermann T; Zaumseil P; Katzer J; Krause HM; Skibitzki O; Lehmann M; Xie YH; von Känel H; Schroeder T
Sci Rep; 2016 Mar; 6():22709. PubMed ID: 26940260
[TBL] [Abstract][Full Text] [Related]
14. Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si(001) substrates.
Grydlik M; Langer G; Fromherz T; Schäffler F; Brehm M
Nanotechnology; 2013 Mar; 24(10):105601. PubMed ID: 23416837
[TBL] [Abstract][Full Text] [Related]
15. Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires.
Persichetti L; Sgarlata A; Mori S; Notarianni M; Cherubini V; Fanfoni M; Motta N; Balzarotti A
Nanoscale Res Lett; 2014; 9(1):358. PubMed ID: 25114649
[TBL] [Abstract][Full Text] [Related]
16. Evolution and Engineering of Precisely Controlled Ge Nanostructures on Scalable Array of Ordered Si Nano-pillars.
Wang S; Zhou T; Li D; Zhong Z
Sci Rep; 2016 Jun; 6():28872. PubMed ID: 27353231
[TBL] [Abstract][Full Text] [Related]
17. Vertical nanowire heterojunction devices based on a clean Si/Ge interface.
Chen L; Fung WY; Lu W
Nano Lett; 2013; 13(11):5521-7. PubMed ID: 24134685
[TBL] [Abstract][Full Text] [Related]
18. Orientational competition in quantum dot growth in Si-Ge heteroepitaxy on pit-patterned Si(001) substrates.
Dixit GK; Dhankhar M; Ranganathan M
Phys Chem Chem Phys; 2020 Apr; 22(14):7643-7649. PubMed ID: 32227039
[TBL] [Abstract][Full Text] [Related]
19. Silane and Germane Molecular Electronics.
Su TA; Li H; Klausen RS; Kim NT; Neupane M; Leighton JL; Steigerwald ML; Venkataraman L; Nuckolls C
Acc Chem Res; 2017 Apr; 50(4):1088-1095. PubMed ID: 28345881
[TBL] [Abstract][Full Text] [Related]
20. Highly Transparent Contacts to the 1D Hole Gas in Ultrascaled Ge/Si Core/Shell Nanowires.
Sistani M; Delaforce J; Kramer RBG; Roch N; Luong MA; den Hertog MI; Robin E; Smoliner J; Yao J; Lieber CM; Naud C; Lugstein A; Buisson O
ACS Nano; 2019 Dec; 13(12):14145-14151. PubMed ID: 31816231
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]