149 related articles for article (PubMed ID: 37022594)
1. Design and modeling of high-performance mid-wave infrared InAsSb-based nBn photodetector using barrier band engineering approaches.
Shaveisi M; Aliparast P
Front Optoelectron; 2023 Apr; 16(1):5. PubMed ID: 37022594
[TBL] [Abstract][Full Text] [Related]
2. Mid-wave infrared optical receiver based on an InAsSb-nBn photodetector using the barrier doping engineering technique for low-power satellite optical wireless communication.
Shaveisi M; Aliparast P
Appl Opt; 2023 Apr; 62(10):2675-2683. PubMed ID: 37132820
[TBL] [Abstract][Full Text] [Related]
3. nBn extended short-wavelength infrared focal plane array.
Dehzangi A; Haddadi A; Chevallier R; Zhang Y; Razeghi M
Opt Lett; 2018 Feb; 43(3):591-594. PubMed ID: 29400848
[TBL] [Abstract][Full Text] [Related]
4. Room temperature operation of mid-infrared InAs
Geum DM; Kim S; Kang S; Kim H; Park H; Rho IP; Ahn SY; Song J; Choi WJ; Yoon E
Opt Express; 2018 Mar; 26(5):6249-6259. PubMed ID: 29529816
[TBL] [Abstract][Full Text] [Related]
5. Upside-down InAs/InAs
Deng G; Song X; Fan M; Xiao T; Luo Z; Chen N; Yang W; Zhang Y
Opt Express; 2020 Apr; 28(9):13616-13624. PubMed ID: 32403832
[TBL] [Abstract][Full Text] [Related]
6. Resonant cavity-enhanced photodetector incorporating a type-II superlattice to extend MWIR sensitivity.
Letka V; Bainbridge A; Craig AP; Al-Saymari F; Marshall ARJ
Opt Express; 2019 Aug; 27(17):23970-23980. PubMed ID: 31510293
[TBL] [Abstract][Full Text] [Related]
7. InAs/InAsSb Strained-Layer Superlattice Mid-Wavelength Infrared Detector for High-Temperature Operation.
Ariyawansa G; Duran J; Reyner C; Scheihing J
Micromachines (Basel); 2019 Nov; 10(12):. PubMed ID: 31766748
[TBL] [Abstract][Full Text] [Related]
8. Bias-selectable three-color short-, extended-short-, and mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb superlattices.
Haddadi A; Razeghi M
Opt Lett; 2017 Nov; 42(21):4275-4278. PubMed ID: 29088141
[TBL] [Abstract][Full Text] [Related]
9. High-performance infrared photodetectors based on InAs/InAsSb/AlAsSb superlattice for 3.5 µm cutoff wavelength spectra.
Jiang J; Wang G; Wu D; Xu Y; Chang F; Zhou W; Li N; Jiang D; Hao H; Cui S; Chen W; Xu X; Ni H; Ding Y; Niu ZC
Opt Express; 2022 Oct; 30(21):38208-38215. PubMed ID: 36258387
[TBL] [Abstract][Full Text] [Related]
10. Integration of an InSb photodetector on Si via heteroepitaxy for the mid-infrared wavelength region.
Jia BW; Tan KH; Loke WK; Wicaksono S; Yoon SF
Opt Express; 2018 Mar; 26(6):7227-7234. PubMed ID: 29609408
[TBL] [Abstract][Full Text] [Related]
11. InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors.
Ting DZ; Rafol SB; Khoshakhlagh A; Soibel A; Keo SA; Fisher AM; Pepper BJ; Hill CJ; Gunapala SD
Micromachines (Basel); 2020 Oct; 11(11):. PubMed ID: 33114617
[TBL] [Abstract][Full Text] [Related]
12. Low dark current density extended short-wavelength infrared superlattice photodetector with atomic layer deposited Al
Li H; Lu L; Yu J; Zheng X; Zhang D; Chen W; Feng Y; Ren G; Zhu L
Appl Opt; 2023 Oct; 62(30):7960-7965. PubMed ID: 38038088
[TBL] [Abstract][Full Text] [Related]
13. High operating temperature pBn barrier mid-wavelength infrared photodetectors and focal plane array based on InAs/InAsSb strained layer superlattices.
Deng G; Chen D; Yang S; Yang C; Yuan J; Yang W; Zhang Y
Opt Express; 2020 Jun; 28(12):17611-17619. PubMed ID: 32679966
[TBL] [Abstract][Full Text] [Related]
14. Black Arsenic Phosphorus Mid-Wave Infrared Barrier Detector with High Detectivity at Room Temperature.
Zhang S; Huang X; Chen Y; Yin R; Wang H; Xu T; Guo J; Wang X; Lin T; Shen H; Ge J; Meng X; Hu W; Dai N; Wang X; Chu J; Wang J
Adv Mater; 2024 May; 36(21):e2313134. PubMed ID: 38331419
[TBL] [Abstract][Full Text] [Related]
15. Type-II superlattices base visible/extended short-wavelength infrared photodetectors with a bandstructure-engineered photo-generated carrier extractor.
Dehzangi A; McClintock R; Haddadi A; Wu D; Chevallier R; Razeghi M
Sci Rep; 2019 Mar; 9(1):5003. PubMed ID: 30899055
[TBL] [Abstract][Full Text] [Related]
16. SRH suppressed P-G-I design for very long-wavelength infrared HgCdTe photodiodes.
Li Q; Xie R; Wang F; Liu S; Zhang K; Zhang T; Gu Y; Guo J; He T; Wang Y; Wang P; Wei Y; Hu W
Opt Express; 2022 May; 30(10):16509-16517. PubMed ID: 36221492
[TBL] [Abstract][Full Text] [Related]
17. High-Performance Anodic Vulcanization-Pretreated Gated P
Sun J; Li N; Jia QX; Zhang X; Jiang DW; Wang GW; Niu ZC
Nanoscale Res Lett; 2021 May; 16(1):98. PubMed ID: 34052936
[TBL] [Abstract][Full Text] [Related]
18. Enhanced detectivity of PbS quantum dots infrared photodetector by introducing the tunneling effect of PMMA.
Ma Z; Li J; Zhang Y; Zhao H; Li Q; Ma C; Yao J
Nanotechnology; 2021 May; 32(19):195502. PubMed ID: 33212428
[TBL] [Abstract][Full Text] [Related]
19. Performance of LWIR to VLWIR barrier photodetectors based on M-structure superlattices.
Cheng Y; Li M; Song Z; Li C
Opt Express; 2024 Jan; 32(2):2804-2816. PubMed ID: 38297800
[TBL] [Abstract][Full Text] [Related]
20. Dark current reduction in microjunction-based double electron barrier type-II InAs/InAsSb superlattice long-wavelength infrared photodetectors.
Chevallier R; Haddadi A; Razeghi M
Sci Rep; 2017 Oct; 7(1):12617. PubMed ID: 28974769
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]