187 related articles for article (PubMed ID: 37022802)
41. Reduction in RF Loss Based on AlGaN Back-Barrier Structure Changes.
Fang Y; Chen L; Liu Y; Wang H
Micromachines (Basel); 2022 May; 13(6):. PubMed ID: 35744445
[TBL] [Abstract][Full Text] [Related]
42. Current transport in graphene/AlGaN/GaN vertical heterostructures probed at nanoscale.
Fisichella G; Greco G; Roccaforte F; Giannazzo F
Nanoscale; 2014 Aug; 6(15):8671-80. PubMed ID: 24946753
[TBL] [Abstract][Full Text] [Related]
43. Performance Enhancement in N
Yang SK; Mazumder S; Wu ZG; Wang YH
Materials (Basel); 2021 Mar; 14(6):. PubMed ID: 33801062
[TBL] [Abstract][Full Text] [Related]
44. Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs.
Chang TH; Xiong K; Park SH; Yuan G; Ma Z; Han J
Sci Rep; 2017 Jul; 7(1):6360. PubMed ID: 28743988
[TBL] [Abstract][Full Text] [Related]
45. Response Enhancement of Pt-AlGaN/GaN HEMT Gas Sensors by Thin AlGaN Barrier with the Source-Connected Gate Configuration at High Temperature.
Vuong TA; Cha HY; Kim H
Micromachines (Basel); 2021 May; 12(5):. PubMed ID: 34068454
[TBL] [Abstract][Full Text] [Related]
46. Comprehensive Schottky Barrier Height Behavior and Reliability Instability with Ni/Au and Pt/Ti/Pt/Au on AlGaN/GaN High-Electron-Mobility Transistors.
Chakraborty S; Kim TW
Micromachines (Basel); 2022 Jan; 13(1):. PubMed ID: 35056249
[TBL] [Abstract][Full Text] [Related]
47. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.
Shih HY; Chu FC; Das A; Lee CY; Chen MJ; Lin RM
Nanoscale Res Lett; 2016 Dec; 11(1):235. PubMed ID: 27129687
[TBL] [Abstract][Full Text] [Related]
48. Aluminum gallium nitride (GaN)/GaN high electron mobility transistor-based sensors for glucose detection in exhaled breath condensate.
Chu BH; Kang BS; Hung SC; Chen KH; Ren F; Sciullo A; Gila BP; Pearton SJ
J Diabetes Sci Technol; 2010 Jan; 4(1):171-9. PubMed ID: 20167182
[TBL] [Abstract][Full Text] [Related]
49. AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating.
Liu X; Lu Y; Yu W; Wu J; He J; Tang D; Liu Z; Somasuntharam P; Zhu D; Liu W; Cao P; Han S; Chen S; Tan LS
Sci Rep; 2015 Sep; 5():14092. PubMed ID: 26364872
[TBL] [Abstract][Full Text] [Related]
50. Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond.
Field DE; Cuenca JA; Smith M; Fairclough SM; Massabuau FC; Pomeroy JW; Williams O; Oliver RA; Thayne I; Kuball M
ACS Appl Mater Interfaces; 2020 Dec; 12(48):54138-54145. PubMed ID: 33196180
[TBL] [Abstract][Full Text] [Related]
51. Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure.
Liu AC; Huang YW; Chen HC; Kuo HC
Micromachines (Basel); 2024 Apr; 15(4):. PubMed ID: 38675328
[TBL] [Abstract][Full Text] [Related]
52. Gate length scaling effect on high-electron mobility transistors devices using AlGaN/GaN and AlInN/AlN/GaN heterostructures.
Liao SY; Lu CC; Chang T; Huang CF; Cheng CH; Chang LB
J Nanosci Nanotechnol; 2014 Aug; 14(8):6243-6. PubMed ID: 25936096
[TBL] [Abstract][Full Text] [Related]
53. Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors.
Wang H; You H; Yang J; Yang M; Wang L; Zhao H; Xie Z; Chen D
Micromachines (Basel); 2022 Dec; 13(12):. PubMed ID: 36557510
[TBL] [Abstract][Full Text] [Related]
54. Sensitivity of 2DEG-based Hall-effect sensors at high temperatures.
Alpert HS; Chapin CA; Dowling KM; Benbrook SR; Köck H; Ausserlechner U; Senesky DG
Rev Sci Instrum; 2020 Feb; 91(2):025003. PubMed ID: 32113418
[TBL] [Abstract][Full Text] [Related]
55. GaN Heterostructures as Innovative X-ray Imaging Sensors-Change of Paradigm.
Thalhammer S; Hörner A; Küß M; Eberle S; Pantle F; Wixforth A; Nagel W
Micromachines (Basel); 2022 Jan; 13(2):. PubMed ID: 35208272
[TBL] [Abstract][Full Text] [Related]
56. High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates.
Abid I; Kabouche R; Bougerol C; Pernot J; Masante C; Comyn R; Cordier Y; Medjdoub F
Micromachines (Basel); 2019 Oct; 10(10):. PubMed ID: 31614745
[TBL] [Abstract][Full Text] [Related]
57. Boronate probe-based hydrogen peroxide detection with AlGaN/GaN HEMT sensor.
Mahaboob I; Reinertsen RJ; McEwen B; Hogan K; Rocco E; Melendez JA; Cady NC; Shahedipour-Sandvik F
Exp Biol Med (Maywood); 2021 Mar; 246(5):523-528. PubMed ID: 33203229
[TBL] [Abstract][Full Text] [Related]
58. Remarkable Reduction in I
Mazumder S; Pal P; Lee KW; Wang YH
Materials (Basel); 2022 Dec; 15(24):. PubMed ID: 36556876
[TBL] [Abstract][Full Text] [Related]
59. High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage.
Zhang Y; Li Y; Wang J; Shen Y; Du L; Li Y; Wang Z; Xu S; Zhang J; Hao Y
Nanoscale Res Lett; 2020 May; 15(1):114. PubMed ID: 32436019
[TBL] [Abstract][Full Text] [Related]
60. Epitaxial Lift-Off of Flexible GaN-Based HEMT Arrays with Performances Optimization by the Piezotronic Effect.
Chen X; Dong J; He C; He L; Chen Z; Li S; Zhang K; Wang X; Wang ZL
Nanomicro Lett; 2021 Feb; 13(1):67. PubMed ID: 34138301
[TBL] [Abstract][Full Text] [Related]
[Previous] [Next] [New Search]
