These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

169 related articles for article (PubMed ID: 37049346)

  • 1. Modeling Catalyst-Free Growth of III-V Nanowires: Empirical and Rigorous Approaches.
    Dubrovskii VG
    Nanomaterials (Basel); 2023 Apr; 13(7):. PubMed ID: 37049346
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Theory of MBE Growth of Nanowires on Reflecting Substrates.
    Dubrovskii VG
    Nanomaterials (Basel); 2022 Jan; 12(2):. PubMed ID: 35055270
    [TBL] [Abstract][Full Text] [Related]  

  • 3. A Novel Growth Method To Improve the Quality of GaAs Nanowires Grown by Ga-Assisted Chemical Beam Epitaxy.
    García Núñez C; Braña AF; López N; García BJ
    Nano Lett; 2018 Jun; 18(6):3608-3615. PubMed ID: 29739187
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Evolution of the Length and Radius of Catalyst-Free III-V Nanowires Grown by Selective Area Epitaxy.
    Dubrovskii VG
    ACS Omega; 2019 May; 4(5):8400-8405. PubMed ID: 31459928
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Criterion for Selective Area Growth of III-V Nanowires.
    Dubrovskii VG
    Nanomaterials (Basel); 2022 Oct; 12(20):. PubMed ID: 36296889
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Growth of long III-As NWs by hydride vapor phase epitaxy.
    Gil E; Andre Y
    Nanotechnology; 2021 Apr; 32(16):162002. PubMed ID: 33434903
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Can Nanowires Coalesce?
    Dubrovskii VG
    Nanomaterials (Basel); 2023 Oct; 13(20):. PubMed ID: 37887919
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Site-controlled VLS growth of planar nanowires: yield and mechanism.
    Zhang C; Miao X; Mohseni PK; Choi W; Li X
    Nano Lett; 2014 Dec; 14(12):6836-41. PubMed ID: 25343224
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Self-catalyzed GaAsP nanowires grown on silicon substrates by solid-source molecular beam epitaxy.
    Zhang Y; Aagesen M; Holm JV; Jørgensen HI; Wu J; Liu H
    Nano Lett; 2013 Aug; 13(8):3897-902. PubMed ID: 23899047
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Theory of MBE Growth of Nanowires on Adsorbing Substrates: The Role of the Shadowing Effect on the Diffusion Transport.
    Dubrovskii VG
    Nanomaterials (Basel); 2022 Mar; 12(7):. PubMed ID: 35407180
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Reconsideration of Nanowire Growth Theory at Low Temperatures.
    Dubrovskii VG
    Nanomaterials (Basel); 2021 Sep; 11(9):. PubMed ID: 34578691
    [TBL] [Abstract][Full Text] [Related]  

  • 12. The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates.
    Wu Y; Liu B; Li Z; Tao T; Xie Z; Wang K; Xiu X; Chen D; Lu H; Zhang R; Zheng Y
    Nanotechnology; 2020 Jan; 31(4):045604. PubMed ID: 31578003
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Preferred growth direction of III-V nanowires on differently oriented Si substrates.
    Zeng H; Yu X; Fonseka HA; Boras G; Jurczak P; Wang T; Sanchez AM; Liu H
    Nanotechnology; 2020 Nov; 31(47):475708. PubMed ID: 32885789
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Two-step fabrication of self-catalyzed Ga-based semiconductor nanowires on Si by molecular-beam epitaxy.
    Yu X; Li L; Wang H; Xiao J; Shen C; Pan D; Zhao J
    Nanoscale; 2016 May; 8(20):10615-21. PubMed ID: 27194599
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Sb-Mediated Tuning of Growth- and Exciton Dynamics in Entirely Catalyst-Free GaAsSb Nanowires.
    Jeong HW; Ajay A; Yu H; Döblinger M; Mukhundhan N; Finley JJ; Koblmüller G
    Small; 2023 Apr; 19(16):e2207531. PubMed ID: 36670090
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Crystallographic orientation control and optical properties of GaN nanowires.
    Wu S; Wang L; Yi X; Liu Z; Yan J; Yuan G; Wei T; Wang J; Li J
    RSC Adv; 2018 Jan; 8(4):2181-2187. PubMed ID: 35542617
    [TBL] [Abstract][Full Text] [Related]  

  • 17. The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes.
    Daudin B; Siladie AM; Gruart M; den Hertog M; Bougerol C; Haas B; Rouvière JL; Robin E; Recio-Carretero MJ; Garro N; Cros A
    Nanotechnology; 2021 Feb; 32(8):085606. PubMed ID: 33147580
    [TBL] [Abstract][Full Text] [Related]  

  • 18. A systematic study on the growth of gaas nanowires by metal-organic chemical vapor deposition.
    Soci C; Bao XY; Aplin DP; Wang D
    Nano Lett; 2008 Dec; 8(12):4275-82. PubMed ID: 19367965
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Designing Morphology in Epitaxial Silicon Nanowires: The Role of Gold, Surface Chemistry, and Phosphorus Doping.
    Kim S; Hill DJ; Pinion CW; Christesen JD; McBride JR; Cahoon JF
    ACS Nano; 2017 May; 11(5):4453-4462. PubMed ID: 28323413
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Gradients of Be-dopant concentration in self-catalyzed GaAs nanowires.
    Rizzo Piton M; Koivusalo E; Hakkarainen T; Galeti HVA; De Giovanni Rodrigues A; Talmila S; Souto S; Lupo D; Galvão Gobato Y; Guina M
    Nanotechnology; 2019 Aug; 30(33):335709. PubMed ID: 30995612
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.