These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

168 related articles for article (PubMed ID: 37091246)

  • 1. Multilevel resistive switching in stable all-inorganic
    Zhai S; Gong J; Feng Y; Que Z; Mao W; He X; Xie Y; Li X; Chu L
    iScience; 2023 Apr; 26(4):106461. PubMed ID: 37091246
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Piezo-Acoustic Resistive Switching Behaviors in High-Performance Organic-Inorganic Hybrid Perovskite Memristors.
    Liu Z; Cheng P; Kang R; Zhou J; Wang X; Zhao X; Zhao J; Liu D; Zuo Z
    Adv Sci (Weinh); 2024 Mar; 11(10):e2308383. PubMed ID: 38225698
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Perovskite-related (CH
    Yang JM; Choi ES; Kim SY; Kim JH; Park JH; Park NG
    Nanoscale; 2019 Mar; 11(13):6453-6461. PubMed ID: 30892306
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Opportunity of the Lead-Free All-Inorganic Cs
    Zeng F; Guo Y; Hu W; Tan Y; Zhang X; Feng J; Tang X
    ACS Appl Mater Interfaces; 2020 May; 12(20):23094-23101. PubMed ID: 32336082
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Lead-Free All-Inorganic Cesium Tin Iodide Perovskite for Filamentary and Interface-Type Resistive Switching toward Environment-Friendly and Temperature-Tolerant Nonvolatile Memories.
    Han JS; Le QV; Choi J; Kim H; Kim SG; Hong K; Moon CW; Kim TL; Kim SY; Jang HW
    ACS Appl Mater Interfaces; 2019 Feb; 11(8):8155-8163. PubMed ID: 30698005
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Enhancing the Resistive Switching Properties of Transparent HfO
    Kim T; Lee D; Chae M; Kim KH; Kim HD
    Sensors (Basel); 2024 Oct; 24(19):. PubMed ID: 39409422
    [TBL] [Abstract][Full Text] [Related]  

  • 7. High Temperature CsPbBr
    Liu Z; Cheng P; Li Y; Kang R; Zhang Z; Zuo Z; Zhao J
    ACS Appl Mater Interfaces; 2021 Dec; 13(49):58885-58897. PubMed ID: 34870980
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Light-Mediated Multilevel Flexible High-Efficiency Perovskite Resistive Switching Memory Based on Mn:CsPbCl
    Ran Q; Wang Y; Zhang W; Xu N; Chen W; Tang X
    J Phys Chem Lett; 2024 Feb; 15(6):1572-1578. PubMed ID: 38301605
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Solution-processed light-induced multilevel non-volatile wearable memory device based on CsPb
    Paul T; Sarkar PK; Maiti S; Sahoo A; Chattopadhyay KK
    Dalton Trans; 2022 Mar; 51(10):3864-3874. PubMed ID: 35171172
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Tailored 2D/3D Halide Perovskite Heterointerface for Substantially Enhanced Endurance in Conducting Bridge Resistive Switching Memory.
    Lee S; Kim H; Kim DH; Kim WB; Lee JM; Choi J; Shin H; Han GS; Jang HW; Jung HS
    ACS Appl Mater Interfaces; 2020 Apr; 12(14):17039-17045. PubMed ID: 32174107
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Implementation of Highly Stable Memristive Characteristics in an Organic-Inorganic Hybrid Resistive Switching Layer of Chitosan-Titanium Oxide with Microwave-Assisted Oxidation.
    Lee DH; Park H; Cho WJ
    Molecules; 2023 Jul; 28(13):. PubMed ID: 37446836
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WO
    Cho Y; Kim J; Kang M; Kim S
    Materials (Basel); 2023 Feb; 16(4):. PubMed ID: 36837316
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Improved analog switching characteristics of Ta
    Lee TS; Choi C
    Nanotechnology; 2022 Mar; 33(24):. PubMed ID: 35226891
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Induced Vacancy-Assisted Filamentary Resistive Switching Device Based on RbPbI
    Das U; Das D; Paul B; Rabha T; Pattanayak S; Kanjilal A; Bhattacharjee S; Sarkar P; Roy A
    ACS Appl Mater Interfaces; 2020 Sep; 12(37):41718-41727. PubMed ID: 32830960
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Advances in Halide Perovskite Memristor from Lead-Based to Lead-Free Materials.
    Fang Y; Zhai S; Chu L; Zhong J
    ACS Appl Mater Interfaces; 2021 Apr; 13(15):17141-17157. PubMed ID: 33844908
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Nonvolatile resistive switching and synaptic characteristics of lead-free all-inorganic perovskite-based flexible memristive devices for neuromorphic systems.
    Siddik A; Haldar PK; Paul T; Das U; Barman A; Roy A; Sarkar PK
    Nanoscale; 2021 May; 13(19):8864-8874. PubMed ID: 33949417
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Filamentary and Interface-Type Memristors Based on Tantalum Oxide for Energy-Efficient Neuromorphic Hardware.
    Kim M; Rehman MA; Lee D; Wang Y; Lim DH; Khan MF; Choi H; Shao QY; Suh J; Lee HS; Park HH
    ACS Appl Mater Interfaces; 2022 Oct; 14(39):44561-44571. PubMed ID: 36164762
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Air-Stable Lead-Free Perovskite Thin Film Based on CsBi
    Xiong Z; Hu W; She Y; Lin Q; Hu L; Tang X; Sun K
    ACS Appl Mater Interfaces; 2019 Aug; 11(33):30037-30044. PubMed ID: 31342747
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Reset Voltage-Dependent Multilevel Resistive Switching Behavior in CsPb
    Ge S; Wang Y; Xiang Z; Cui Y
    ACS Appl Mater Interfaces; 2018 Jul; 10(29):24620-24626. PubMed ID: 29969009
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Full-Inorganic Flexible Ag
    Zhu Y; Liang JS; Shi X; Zhang Z
    ACS Appl Mater Interfaces; 2022 Sep; 14(38):43482-43489. PubMed ID: 36102604
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.