These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
135 related articles for article (PubMed ID: 37111007)
1. High-Performance Thin-Film Transistors with ZnO:H/ZnO Double Active Layers Fabricated at Room Temperature. Wang D; Jiang Z; Li L; Zhu D; Wang C; Han S; Fang M; Liu X; Liu W; Cao P; Lu Y Nanomaterials (Basel); 2023 Apr; 13(8):. PubMed ID: 37111007 [TBL] [Abstract][Full Text] [Related]
2. Performance Enhancement for Indium-Free Metal Oxide Thin-Film Transistors with Double-Active-Layers by Magnetron Sputtering at Room Temperature. Yan X; Song K; Li B; Zhang Y; Yang F; Wang Y; Wang C; Chi Y; Yang X Micromachines (Basel); 2022 Nov; 13(11):. PubMed ID: 36422452 [TBL] [Abstract][Full Text] [Related]
3. High performance thin film transistor with ZnO channel layer deposited by DC magnetron sputtering. Moon YK; Moon DY; Lee SH; Jeong CO; Park JW J Nanosci Nanotechnol; 2008 Sep; 8(9):4557-60. PubMed ID: 19049057 [TBL] [Abstract][Full Text] [Related]
4. Rational Design of ZnO:H/ZnO Bilayer Structure for High-Performance Thin-Film Transistors. Abliz A; Huang CW; Wang J; Xu L; Liao L; Xiao X; Wu WW; Fan Z; Jiang C; Li J; Guo S; Liu C; Guo T ACS Appl Mater Interfaces; 2016 Mar; 8(12):7862-8. PubMed ID: 26977526 [TBL] [Abstract][Full Text] [Related]
5. Simulation, fabrication and characterization of ZnO based thin film transistors grown by radio frequency magnetron sputtering. Singh S; Chakrabarti P J Nanosci Nanotechnol; 2012 Mar; 12(3):1880-5. PubMed ID: 22754993 [TBL] [Abstract][Full Text] [Related]
6. Improvement in the Electrical Performance of Ge-Doped InZnO Thin-Film Transistor. Im YJ; Kim SJ; Shin JH; Ha SS; Park CH; Yi M J Nanosci Nanotechnol; 2015 Oct; 15(10):7537-41. PubMed ID: 26726366 [TBL] [Abstract][Full Text] [Related]
7. Flexible thin-film transistors on plastic substrate at room temperature. Han D; Wang W; Cai J; Wang L; Ren Y; Wang Y; Zhang S J Nanosci Nanotechnol; 2013 Jul; 13(7):5154-7. PubMed ID: 23901545 [TBL] [Abstract][Full Text] [Related]
8. Rational Hydrogenation for Enhanced Mobility and High Reliability on ZnO-based Thin Film Transistors: From Simulation to Experiment. Xu L; Chen Q; Liao L; Liu X; Chang TC; Chang KC; Tsai TM; Jiang C; Wang J; Li J ACS Appl Mater Interfaces; 2016 Mar; 8(8):5408-15. PubMed ID: 26856932 [TBL] [Abstract][Full Text] [Related]
9. Transparent Thin-Film Transistors Based on Sputtered Electric Double Layer. Cai W; Ma X; Zhang J; Song A Materials (Basel); 2017 Apr; 10(4):. PubMed ID: 28772789 [TBL] [Abstract][Full Text] [Related]
10. Significant improvement of spray pyrolyzed ZnO thin film by precursor optimization for high mobility thin film transistors. Saha JK; Bukke RN; Mude NN; Jang J Sci Rep; 2020 Jun; 10(1):8999. PubMed ID: 32488171 [TBL] [Abstract][Full Text] [Related]
11. Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique. Li H; Han D; Liu L; Dong J; Cui G; Zhang S; Zhang X; Wang Y Nanoscale Res Lett; 2017 Dec; 12(1):223. PubMed ID: 28347129 [TBL] [Abstract][Full Text] [Related]
12. Influence of Oxygen Partial Pressure on Radio Frequency Magnetron Sputtered Amorphous InZnSnO Thin Film Transistors. Lestari AD; Putri M; Heo YW; Lee HY J Nanosci Nanotechnol; 2020 Jan; 20(1):252-256. PubMed ID: 31383163 [TBL] [Abstract][Full Text] [Related]
13. Fabrication of Zinc Oxide-Based Thin-Film Transistors by Radio Frequency Sputtering for Ultraviolet Sensing Applications. Hsu MH; Chang SP; Chang SJ; Li CW; Li JY; Lin CC J Nanosci Nanotechnol; 2018 May; 18(5):3518-3522. PubMed ID: 29442860 [TBL] [Abstract][Full Text] [Related]
14. One-Step Synergistic Treatment Approach for High Performance Amorphous InGaZnO Thin-Film Transistors Fabricated at Room Temperature. Wang C; Li Y; Jin Y; Guo G; Song Y; Huang H; He H; Wang A Nanomaterials (Basel); 2022 Oct; 12(19):. PubMed ID: 36234608 [TBL] [Abstract][Full Text] [Related]
15. Stable and High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition. Lin YY; Hsu CC; Tseng MH; Shyue JJ; Tsai FY ACS Appl Mater Interfaces; 2015 Oct; 7(40):22610-7. PubMed ID: 26436832 [TBL] [Abstract][Full Text] [Related]
16. Nano-Scale Ga Bukke RN; Mude NN; Bae J; Jang J ACS Appl Mater Interfaces; 2022 Sep; 14(36):41508-41519. PubMed ID: 36066003 [TBL] [Abstract][Full Text] [Related]
17. Improving the electrical properties of transparent ZnO-based thin- film transistors using MgO gate dielectric with various oxygen concentrations. Hwang JD; Hsu ZR Nanotechnology; 2023 Nov; 35(4):. PubMed ID: 37669648 [TBL] [Abstract][Full Text] [Related]
18. Gate insulator effects on the electrical performance of ZnO thin film transistor on a polyethersulphone substrate. Lee JK; Choi DK J Nanosci Nanotechnol; 2012 Jul; 12(7):5859-63. PubMed ID: 22966670 [TBL] [Abstract][Full Text] [Related]
19. High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide. Noviyana I; Lestari AD; Putri M; Won MS; Bae JS; Heo YW; Lee HY Materials (Basel); 2017 Jun; 10(7):. PubMed ID: 28773058 [TBL] [Abstract][Full Text] [Related]
20. Dual active layer a-IGZO TFT via homogeneous conductive layer formation by photochemical H-doping. Jeong SK; Kim MH; Lee SY; Seo H; Choi DK Nanoscale Res Lett; 2014; 9(1):619. PubMed ID: 25435832 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]