These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
130 related articles for article (PubMed ID: 37125893)
1. Se-Vacancy Healing with Substitutional Oxygen in WSe Cho H; Sritharan M; Ju Y; Pujar P; Dutta R; Jang WS; Kim YM; Hong S; Yoon Y; Kim S ACS Nano; 2023 Jun; 17(12):11279-11289. PubMed ID: 37125893 [TBL] [Abstract][Full Text] [Related]
2. High-Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions. Liu B; Ma Y; Zhang A; Chen L; Abbas AN; Liu Y; Shen C; Wan H; Zhou C ACS Nano; 2016 May; 10(5):5153-60. PubMed ID: 27159780 [TBL] [Abstract][Full Text] [Related]
3. Chemically Tuned p- and n-Type WSe Ji HG; Solís-Fernández P; Yoshimura D; Maruyama M; Endo T; Miyata Y; Okada S; Ago H Adv Mater; 2019 Oct; 31(42):e1903613. PubMed ID: 31475400 [TBL] [Abstract][Full Text] [Related]
4. Interfacial Doping Effects in Fluoropolymer-Tungsten Diselenide Composites Providing High-Performance P-Type Transistors. Lee H; Hong S; Yoo H Polymers (Basel); 2021 Mar; 13(7):. PubMed ID: 33808061 [TBL] [Abstract][Full Text] [Related]
5. Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors. Liu W; Kang J; Sarkar D; Khatami Y; Jena D; Banerjee K Nano Lett; 2013 May; 13(5):1983-90. PubMed ID: 23527483 [TBL] [Abstract][Full Text] [Related]
6. High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors. Movva HC; Rai A; Kang S; Kim K; Fallahazad B; Taniguchi T; Watanabe K; Tutuc E; Banerjee SK ACS Nano; 2015 Oct; 9(10):10402-10. PubMed ID: 26343531 [TBL] [Abstract][Full Text] [Related]
7. Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts. Yamamoto M; Nakaharai S; Ueno K; Tsukagoshi K Nano Lett; 2016 Apr; 16(4):2720-7. PubMed ID: 26963588 [TBL] [Abstract][Full Text] [Related]
8. Multi-Layer Palladium Diselenide as a Contact Material for Two-Dimensional Tungsten Diselenide Field-Effect Transistors. Murastov G; Aslam MA; Leitner S; Tkachuk V; Plutnarová I; Pavlica E; Rodriguez RD; Sofer Z; Matković A Nanomaterials (Basel); 2024 Mar; 14(5):. PubMed ID: 38470809 [TBL] [Abstract][Full Text] [Related]
9. Recessed-Channel WSe Lee D; Choi Y; Kim J; Kim J ACS Nano; 2022 May; 16(5):8484-8492. PubMed ID: 35575475 [TBL] [Abstract][Full Text] [Related]
10. Edge-Passivated Monolayer WSe Chen S; Zhang Y; King WP; Bashir R; van der Zande AM Adv Mater; 2024 Sep; 36(39):e2313694. PubMed ID: 39023387 [TBL] [Abstract][Full Text] [Related]
11. Large-Scale Complementary Logic Circuit Enabled by Al Das T; Youn S; Seo JE; Yang E; Chang J ACS Appl Mater Interfaces; 2023 Sep; 15(38):45116-45127. PubMed ID: 37713451 [TBL] [Abstract][Full Text] [Related]
13. A facile synthetic route to tungsten diselenide using a new precursor containing a long alkyl chain cation for multifunctional electronic and optoelectronic applications. Kim J; Lim YR; Yoon Y; Song W; Park BK; Lim J; Chung TM; Kim CG RSC Adv; 2019 Feb; 9(11):6169-6176. PubMed ID: 35517303 [TBL] [Abstract][Full Text] [Related]
14. Molecular Dopant-Dependent Charge Transport in Surface-Charge-Transfer-Doped Tungsten Diselenide Field Effect Transistors. Kim JK; Cho K; Jang J; Baek KY; Kim J; Seo J; Song M; Shin J; Kim J; Parkin SSP; Lee JH; Kang K; Lee T Adv Mater; 2021 Nov; 33(44):e2101598. PubMed ID: 34533851 [TBL] [Abstract][Full Text] [Related]
15. Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors. Lin YC; Jariwala B; Bersch BM; Xu K; Nie Y; Wang B; Eichfeld SM; Zhang X; Choudhury TH; Pan Y; Addou R; Smyth CM; Li J; Zhang K; Haque MA; Fölsch S; Feenstra RM; Wallace RM; Cho K; Fullerton-Shirey SK; Redwing JM; Robinson JA ACS Nano; 2018 Feb; 12(2):965-975. PubMed ID: 29360349 [TBL] [Abstract][Full Text] [Related]
16. Band Structure Engineering of Layered WSe Park JH; Rai A; Hwang J; Zhang C; Kwak I; Wolf SF; Vishwanath S; Liu X; Dobrowolska M; Furdyna J; Xing HG; Cho K; Banerjee SK; Kummel AC ACS Nano; 2019 Jul; 13(7):7545-7555. PubMed ID: 31260257 [TBL] [Abstract][Full Text] [Related]
17. A ferroelectric relaxor polymer-enhanced p-type WSe Yin C; Wang X; Chen Y; Li D; Lin T; Sun S; Shen H; Du P; Sun J; Meng X; Chu J; Wong HF; Leung CW; Wang Z; Wang J Nanoscale; 2018 Jan; 10(4):1727-1734. PubMed ID: 29308498 [TBL] [Abstract][Full Text] [Related]
18. Reversible Semiconducting-to-Metallic Phase Transition in Chemical Vapor Deposition Grown Monolayer WSe2 and Applications for Devices. Ma Y; Liu B; Zhang A; Chen L; Fathi M; Shen C; Abbas AN; Ge M; Mecklenburg M; Zhou C ACS Nano; 2015 Jul; 9(7):7383-91. PubMed ID: 26125321 [TBL] [Abstract][Full Text] [Related]
19. End-Bonded Metal Contacts on WSe Chu CH; Lin HC; Yeh CH; Liang ZY; Chou MY; Chiu PW ACS Nano; 2019 Jul; 13(7):8146-8154. PubMed ID: 31244047 [TBL] [Abstract][Full Text] [Related]
20. Toward Unusual-High Hole Mobility of p-Channel Field-Effect-Transistors. Sun J; Zhuang X; Fan Y; Guo S; Cheng Z; Liu D; Yin Y; Tian Y; Pang Z; Wei Z; Song X; Liao L; Chen F; Ho JC; Yang ZX Small; 2021 Sep; 17(37):e2102323. PubMed ID: 34288454 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]