163 related articles for article (PubMed ID: 37143813)
1. High-performance diodes based on black phosphorus/carbon nanomaterial heterostructures.
Ye X; Zhang Y; Gao S; Zhao X; Xu K; Wang L; Jiang S; Shi F; Yang J; Cao Z; Chen C
Nanoscale Adv; 2023 May; 5(9):2427-2436. PubMed ID: 37143813
[TBL] [Abstract][Full Text] [Related]
2. High-Performance Infrared Detectors Based on Black Phosphorus/Carbon Nanotube Heterojunctions.
Zhang Y; Li Q; Ye X; Wang L; He Z; Zhang T; Wang K; Shi F; Yang J; Jiang S; Wang X; Chen C
Nanomaterials (Basel); 2023 Oct; 13(19):. PubMed ID: 37836341
[TBL] [Abstract][Full Text] [Related]
3. High-Performance Two-Dimensional Schottky Diodes Utilizing Chemical Vapour Deposition-Grown Graphene-MoS
Huang H; Xu W; Chen T; Chang RJ; Sheng Y; Zhang Q; Hou L; Warner JH
ACS Appl Mater Interfaces; 2018 Oct; 10(43):37258-37266. PubMed ID: 30346128
[TBL] [Abstract][Full Text] [Related]
4. Influence of the interface structure and strain on the rectification performance of lateral MoS
Song S; Gong J; Jiang X; Yang S
Phys Chem Chem Phys; 2022 Jan; 24(4):2265-2274. PubMed ID: 35014641
[TBL] [Abstract][Full Text] [Related]
5. Tuning the Schottky rectification in graphene-hexagonal boron nitride-molybdenum disulfide heterostructure.
Liu B; Zhao YQ; Yu ZL; Wang LZ; Cai MQ
J Colloid Interface Sci; 2018 Mar; 513():677-683. PubMed ID: 29216575
[TBL] [Abstract][Full Text] [Related]
6. Temperature-Dependent and Gate-Tunable Rectification in a Black Phosphorus/WS
Dastgeer G; Khan MF; Nazir G; Afzal AM; Aftab S; Naqvi BA; Cha J; Min KA; Jamil Y; Jung J; Hong S; Eom J
ACS Appl Mater Interfaces; 2018 Apr; 10(15):13150-13157. PubMed ID: 29578329
[TBL] [Abstract][Full Text] [Related]
7. Floating-Gate Manipulated Graphene-Black Phosphorus Heterojunction for Nonvolatile Ambipolar Schottky Junction Memories, Memory Inverter Circuits, and Logic Rectifiers.
Li D; Chen M; Zong Q; Zhang Z
Nano Lett; 2017 Oct; 17(10):6353-6359. PubMed ID: 28956929
[TBL] [Abstract][Full Text] [Related]
8. Carbon nanotube intramolecular p-i-n junction diodes with symmetric and asymmetric contacts.
Chen C; Liao C; Wei L; Zhong H; He R; Liu Q; Liu X; Lai Y; Song C; Jin T; Zhang Y
Sci Rep; 2016 Feb; 6():22203. PubMed ID: 26915400
[TBL] [Abstract][Full Text] [Related]
9. Black-Phosphorus-Based Orientation-Induced Diodes.
Xin W; Li XK; He XL; Su BW; Jiang XQ; Huang KX; Zhou XF; Liu ZB; Tian JG
Adv Mater; 2018 Jan; 30(2):. PubMed ID: 29168903
[TBL] [Abstract][Full Text] [Related]
10. Epitaxial Growth of Two-Dimensional MoO
Kang T; You J; Wang J; Li Y; Hu Y; Tang TW; Lin X; Li Y; Liu L; Gao Z; Liu Y; Luo Z
Nano Lett; 2024 Jun; ():. PubMed ID: 38885458
[TBL] [Abstract][Full Text] [Related]
11. Flexible carbon nanotube Schottky diode and its integrated circuit applications.
Lee Y; Jung H; Choi B; Yoon J; Yoo HB; Kim HJ; Park GH; Kim DM; Kim DH; Kang MH; Choi SJ
RSC Adv; 2019 Jul; 9(38):22124-22128. PubMed ID: 35518852
[TBL] [Abstract][Full Text] [Related]
12. Vertically Stacked and Self-Encapsulated van der Waals Heterojunction Diodes Using Two-Dimensional Layered Semiconductors.
Miao J; Xu Z; Li Q; Bowman A; Zhang S; Hu W; Zhou Z; Wang C
ACS Nano; 2017 Oct; 11(10):10472-10479. PubMed ID: 28926227
[TBL] [Abstract][Full Text] [Related]
13. Vertical versus Lateral Two-Dimensional Heterostructures: On the Topic of Atomically Abrupt p/n-Junctions.
Zhou R; Ostwal V; Appenzeller J
Nano Lett; 2017 Aug; 17(8):4787-4792. PubMed ID: 28718653
[TBL] [Abstract][Full Text] [Related]
14. Black Phosphorus-Zinc Oxide Nanomaterial Heterojunction for p-n Diode and Junction Field-Effect Transistor.
Jeon PJ; Lee YT; Lim JY; Kim JS; Hwang DK; Im S
Nano Lett; 2016 Feb; 16(2):1293-8. PubMed ID: 26771206
[TBL] [Abstract][Full Text] [Related]
15. A High Current Density Direct-Current Generator Based on a Moving van der Waals Schottky Diode.
Lin S; Lu Y; Feng S; Hao Z; Yan Y
Adv Mater; 2019 Feb; 31(7):e1804398. PubMed ID: 30556216
[TBL] [Abstract][Full Text] [Related]
16. Gate-Tunable and Programmable n-InGaAs/Black Phosphorus Heterojunction Diodes.
Lee Y; Um DS; Lim S; Lee H; Kim MP; Yang TY; Chueh YL; Kim HJ; Ko H
ACS Appl Mater Interfaces; 2019 Jul; 11(26):23382-23391. PubMed ID: 31184467
[TBL] [Abstract][Full Text] [Related]
17. Ultrathin All-2D Lateral Diodes Using Top and Bottom Contacted Laterally Spaced Graphene Electrodes to WS
Zhang Q; Hou L; Shautsova V; Warner JH
ACS Appl Mater Interfaces; 2023 Apr; 15(14):18012-18021. PubMed ID: 36977206
[TBL] [Abstract][Full Text] [Related]
18. Electrical Rectifying and Photosensing Property of Schottky Diode Based on MoS
Wu JY; Chun YT; Li S; Zhang T; Chu D
ACS Appl Mater Interfaces; 2018 Jul; 10(29):24613-24619. PubMed ID: 29972018
[TBL] [Abstract][Full Text] [Related]
19. Solution-Processable Large-Area Black Phosphorus/Reduced Graphene Oxide Schottky Junction for High-Temperature Broadband Photodetectors.
Zhou Y; Yang X; Wang N; Wang X; Wang J; Zhu G; Feng Q
Small; 2024 Apr; ():e2401289. PubMed ID: 38593317
[TBL] [Abstract][Full Text] [Related]
20. Infrared Light-Emitting Diodes Based on Chirality-Sorted Carbon Nanotube Films.
Han B; Li Y; Wu W; Cai X; Qiu S; He X; Wang S
ACS Appl Mater Interfaces; 2024 Jan; 16(4):4975-4983. PubMed ID: 38233025
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]