These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

133 related articles for article (PubMed ID: 37155833)

  • 1. Nano
    Xiong C; Yang Z; Shen J; Tang F; He Q; Li Y; Xu M; Miao X
    ACS Appl Mater Interfaces; 2023 May; 15(19):23371-23379. PubMed ID: 37155833
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Low-Power Memristive Logic Device Enabled by Controllable Oxidation of 2D HfSe
    Liu L; Li Y; Huang X; Chen J; Yang Z; Xue KH; Xu M; Chen H; Zhou P; Miao X
    Adv Sci (Weinh); 2021 Aug; 8(15):e2005038. PubMed ID: 34050639
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Parylene-based memristive crossbar structures with multilevel resistive switching for neuromorphic computing.
    Shvetsov BS; Minnekhanov AA; Emelyanov AV; Ilyasov AI; Grishchenko YV; Zanaveskin ML; Nesmelov AA; Streltsov DR; Patsaev TD; Vasiliev AL; Rylkov VV; Demin VA
    Nanotechnology; 2022 Mar; 33(25):. PubMed ID: 35276689
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Amorphous Boron Nitride Memristive Device for High-Density Memory and Neuromorphic Computing Applications.
    Khot AC; Dongale TD; Nirmal KA; Sung JH; Lee HJ; Nikam RD; Kim TG
    ACS Appl Mater Interfaces; 2022 Mar; 14(8):10546-10557. PubMed ID: 35179364
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Reliable Memristive Switching Memory Devices Enabled by Densely Packed Silver Nanocone Arrays as Electric-Field Concentrators.
    You BK; Kim JM; Joe DJ; Yang K; Shin Y; Jung YS; Lee KJ
    ACS Nano; 2016 Oct; 10(10):9478-9488. PubMed ID: 27718554
    [TBL] [Abstract][Full Text] [Related]  

  • 6. High-Performance 2D Ambipolar MoTe
    Zhao B; Xu L; Peng R; Xin Z; Shi R; Wu Y; Wang B; Chen J; Pan T; Liu K
    Small; 2024 Jul; ():e2402727. PubMed ID: 38958086
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Understanding the Resistive Switching Behaviors of Top Electrode (Au, Cu, and Al)-Dependent TiO
    Yu Y; Ding Z; Ren Y; Wang X; Quan H; Jia H; Jiang C
    ACS Omega; 2024 Jun; 9(23):24601-24609. PubMed ID: 38882132
    [TBL] [Abstract][Full Text] [Related]  

  • 8. HfO
    Wang C; Mao GQ; Huang M; Huang E; Zhang Z; Yuan J; Cheng W; Xue KH; Wang X; Miao X
    Adv Sci (Weinh); 2022 Jul; 9(21):e2201446. PubMed ID: 35644043
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Thermally Oxidized Memristor and 1T1R Integration for Selector Function and Low-Power Memory.
    Pan Z; Zhang J; Liu X; Zhao L; Ma J; Luo C; Sun Y; Dan Z; Gao W; Lu X; Li J; Huo N
    Adv Sci (Weinh); 2024 Jul; ():e2401915. PubMed ID: 38958519
    [TBL] [Abstract][Full Text] [Related]  

  • 10. A New Approach to the Fabrication of Memristive Neuromorphic Devices: Compositionally Graded Films.
    Yoon JG
    Materials (Basel); 2020 Aug; 13(17):. PubMed ID: 32825397
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Stochastic memristive devices for computing and neuromorphic applications.
    Gaba S; Sheridan P; Zhou J; Choi S; Lu W
    Nanoscale; 2013 Jul; 5(13):5872-8. PubMed ID: 23698627
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Three-Dimensional Reconstruction of Conductive Filaments in HfO
    Wei T; Lu Y; Zhang F; Tang J; Gao B; Yu P; Qian H; Wu H
    Adv Mater; 2023 Mar; 35(10):e2209925. PubMed ID: 36517930
    [TBL] [Abstract][Full Text] [Related]  

  • 13. In-Memory-Computing Realization with a Photodiode/Memristor Based Vision Sensor.
    Vasileiadis N; Ntinas V; Sirakoulis GC; Dimitrakis P
    Materials (Basel); 2021 Sep; 14(18):. PubMed ID: 34576447
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Robust Ag/ZrO
    Yan X; Qin C; Lu C; Zhao J; Zhao R; Ren D; Zhou Z; Wang H; Wang J; Zhang L; Li X; Pei Y; Wang G; Zhao Q; Wang K; Xiao Z; Li H
    ACS Appl Mater Interfaces; 2019 Dec; 11(51):48029-48038. PubMed ID: 31789034
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO
    Choi J; Kim S
    Micromachines (Basel); 2020 Sep; 11(10):. PubMed ID: 33003640
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Vertical MoS
    Xu R; Jang H; Lee MH; Amanov D; Cho Y; Kim H; Park S; Shin HJ; Ham D
    Nano Lett; 2019 Apr; 19(4):2411-2417. PubMed ID: 30896171
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Multi-Terminal Nonwoven Stochastic Memristive Devices Based on Polyamide-6 and Polyaniline for Neuromorphic Computing.
    Prudnikov N; Malakhov S; Kulagin V; Emelyanov A; Chvalun S; Demin V; Erokhin V
    Biomimetics (Basel); 2023 May; 8(2):. PubMed ID: 37218774
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Filament Growth and Resistive Switching in Hafnium Oxide Memristive Devices.
    Dirkmann S; Kaiser J; Wenger C; Mussenbrock T
    ACS Appl Mater Interfaces; 2018 May; 10(17):14857-14868. PubMed ID: 29601180
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Sprayed FeWO
    Patil AR; Dongale TD; Namade LD; Mohite SV; Kim Y; Sutar SS; Kamat RK; Rajpure KY
    J Colloid Interface Sci; 2023 Jul; 642():540-553. PubMed ID: 37028161
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Nonvolatile resistive switching memory properties of thermally annealed titania precursor/polyelectrolyte multilayers.
    Lee C; Kim I; Shin H; Kim S; Cho J
    Langmuir; 2009 Oct; 25(19):11276-81. PubMed ID: 19725555
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.