These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

156 related articles for article (PubMed ID: 37157636)

  • 1. 980 nm electrically pumped continuous lasing of QW lasers grown on silicon.
    Lin Q; Huang J; Lin L; Luo W; Gu W; Lau KM
    Opt Express; 2023 May; 31(10):15326-15333. PubMed ID: 37157636
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates.
    Chen S; Liao M; Tang M; Wu J; Martin M; Baron T; Seeds A; Liu H
    Opt Express; 2017 Mar; 25(5):4632-4639. PubMed ID: 28380734
    [TBL] [Abstract][Full Text] [Related]  

  • 3. 1.55 µm electrically pumped continuous wave lasing of quantum dash lasers grown on silicon.
    Xue Y; Luo W; Zhu S; Lin L; Shi B; Lau KM
    Opt Express; 2020 Jun; 28(12):18172-18179. PubMed ID: 32680018
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Electrically pumped InP/GaAsP quantum dot lasers grown on (001) Si emitting at 750 nm.
    Luo W; Lin L; Huang J; Lin Q; Lau KM
    Opt Express; 2022 Oct; 30(22):40750-40755. PubMed ID: 36299004
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Electrically pumped InGaAs/GaAs quantum well microdisk lasers directly grown on Si(100) with Ge/GaAs buffer.
    Kryzhanovskaya NV; Moiseev EI; Polubavkina YS; Maximov MV; Kulagina MM; Troshkov SI; Zadiranov YM; Lipovskii AA; Baidus NV; Dubinov AA; Krasilnik ZF; Novikov AV; Pavlov DA; Rykov AV; Sushkov AA; Yurasov DV; Zhukov AE
    Opt Express; 2017 Jul; 25(14):16754-16760. PubMed ID: 28789176
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs).
    Kumar A; Lee SY; Yadav S; Tan KH; Loke WK; Dong Y; Lee KH; Wicaksono S; Liang G; Yoon SF; Antoniadis D; Yeo YC; Gong X
    Opt Express; 2017 Dec; 25(25):31853-31862. PubMed ID: 29245855
    [TBL] [Abstract][Full Text] [Related]  

  • 7. InAs/GaAs quantum-dot lasers grown on on-axis Si (001) without dislocation filter layers.
    Wang Y; Ma B; Li J; Liu Z; Jiang C; Li C; Liu H; Zhang Y; Zhang Y; Wang Q; Xie X; Qiu X; Ren X; Wei X
    Opt Express; 2023 Jan; 31(3):4862-4872. PubMed ID: 36785443
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Electrically pumped continuous-wave 1.3  μm quantum-dot lasers epitaxially grown on on-axis (001)  GaP/Si.
    Liu AY; Peters J; Huang X; Jung D; Norman J; Lee ML; Gossard AC; Bowers JE
    Opt Lett; 2017 Jan; 42(2):338-341. PubMed ID: 28081107
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Room-temperature electrically-pumped 1.5 μm InGaAs/InAlGaAs laser monolithically grown on on-axis (001) Si.
    Zhu S; Shi B; Li Q; Lau KM
    Opt Express; 2018 May; 26(11):14514-14523. PubMed ID: 29877487
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Red-emitting InP quantum dot micro-disk lasers epitaxially grown on (001) silicon.
    Luo W; Lin L; Huang J; Han Y; Lau KM
    Opt Lett; 2021 Sep; 46(18):4514-4517. PubMed ID: 34525035
    [TBL] [Abstract][Full Text] [Related]  

  • 11. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates.
    Wang T; Liu H; Lee A; Pozzi F; Seeds A
    Opt Express; 2011 Jun; 19(12):11381-6. PubMed ID: 21716368
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer.
    Tanabe K; Guimard D; Bordel D; Iwamoto S; Arakawa Y
    Opt Express; 2010 May; 18(10):10604-8. PubMed ID: 20588912
    [TBL] [Abstract][Full Text] [Related]  

  • 13. High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate.
    Sun J; Lin J; Zhou M; Zhang J; Liu H; You T; Ou X
    Light Sci Appl; 2024 Mar; 13(1):71. PubMed ID: 38462605
    [TBL] [Abstract][Full Text] [Related]  

  • 14. High performance 2150 nm-emitting InAs/InGaAs/InP quantum well lasers grown by metalorganic vapor phase epitaxy.
    Luo S; Ji HM; Gao F; Xu F; Yang XG; Liang P; Yang T
    Opt Express; 2015 Apr; 23(7):8383-8. PubMed ID: 25968677
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Optically pumped 1.3  μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon.
    Wan Y; Li Q; Liu AY; Gossard AC; Bowers JE; Hu EL; Lau KM
    Opt Lett; 2016 Apr; 41(7):1664-7. PubMed ID: 27192313
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core-Multishell Nanowires.
    Stettner T; Thurn A; Döblinger M; Hill MO; Bissinger J; Schmiedeke P; Matich S; Kostenbader T; Ruhstorfer D; Riedl H; Kaniber M; Lauhon LJ; Finley JJ; Koblmüller G
    Nano Lett; 2018 Oct; 18(10):6292-6300. PubMed ID: 30185051
    [TBL] [Abstract][Full Text] [Related]  

  • 17. 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers.
    Tang M; Chen S; Wu J; Jiang Q; Dorogan VG; Benamara M; Mazur YI; Salamo GJ; Seeds A; Liu H
    Opt Express; 2014 May; 22(10):11528-35. PubMed ID: 24921274
    [TBL] [Abstract][Full Text] [Related]  

  • 18. The Structural, Electronic, and Optical Properties of Ge/Si Quantum Wells: Lasing at a Wavelength of 1550 nm.
    Li H; Wang J; Bai J; Zhang S; Zhang S; Sun Y; Dou Q; Ding M; Wang Y; Qu D; Du J; Tang C; Li E; Prades JD
    Nanomaterials (Basel); 2020 May; 10(5):. PubMed ID: 32466114
    [TBL] [Abstract][Full Text] [Related]  

  • 19. GaSb-based laser diodes grown on MOCVD GaAs-on-Si templates.
    Monge-Bartolome L; Shi B; Lai B; Boissier G; Cerutti L; Rodriguez JB; Lau KM; Tournié E
    Opt Express; 2021 Mar; 29(7):11268-11276. PubMed ID: 33820242
    [TBL] [Abstract][Full Text] [Related]  

  • 20. High slope-efficiency quantum-dot lasers grown on planar exact silicon (001) with asymmetric waveguide structures.
    Wang J; Liu Z; Liu H; Bai Y; Ma B; Xiao C; Jiang C; Li J; Wang H; Jia Y; Liu K; Yang Y; Wang Q; Huang Y; Ren X
    Opt Express; 2022 Mar; 30(7):11563-11571. PubMed ID: 35473098
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.