154 related articles for article (PubMed ID: 37241589)
1. Structural Analysis of Mo Thin Films on Sapphire Substrates for Epitaxial Growth of AlN.
Kim J; Kim Y; Hong SM
Micromachines (Basel); 2023 Apr; 14(5):. PubMed ID: 37241589
[TBL] [Abstract][Full Text] [Related]
2. Preparation of single crystalline AlN thin films on ZnO nanostructures by atomic layer deposition at low temperature.
Zhang Y; Tao JJ; Chen HY; Lu HL
Nanotechnology; 2021 Apr; 32(27):. PubMed ID: 33740776
[TBL] [Abstract][Full Text] [Related]
3. Synthesis of C-axis-oriented AlN thin films on high-conducting layers: Al, Mo, Ti, TiN, and Ni.
Iriarte GF; Bjurström J; Westlinder J; Engelmark F; Katardjiev IV
IEEE Trans Ultrason Ferroelectr Freq Control; 2005 Jul; 52(7):1170-4. PubMed ID: 16212256
[TBL] [Abstract][Full Text] [Related]
4. Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.
Zhao J; Hu H; Lei Y; Wan H; Gong L; Zhou S
Nanomaterials (Basel); 2019 Nov; 9(11):. PubMed ID: 31744248
[TBL] [Abstract][Full Text] [Related]
5. Growth of Highly c-Axis Oriented AlScN Films on Commercial Substrates.
Su J; Fichtner S; Ghori MZ; Wolff N; Islam MR; Lotnyk A; Kaden D; Niekiel F; Kienle L; Wagner B; Lofink F
Micromachines (Basel); 2022 May; 13(5):. PubMed ID: 35630250
[TBL] [Abstract][Full Text] [Related]
6. Investigations of AlN thin film crystalline properties in a wide temperature range by in situ X-ray diffraction measurements: Correlation with AlN/sapphire-based SAW structure performance.
Aït Aïssa K; Elmazria O; Boulet P; Aubert T; Legrani O; Mangin D
IEEE Trans Ultrason Ferroelectr Freq Control; 2015 Jul; 62(7):1397-402. PubMed ID: 26168184
[TBL] [Abstract][Full Text] [Related]
7. Growth of Semi-Polar (101¯3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE.
Li X; Zhao J; Liu T; Lu Y; Zhang J
Materials (Basel); 2021 Mar; 14(7):. PubMed ID: 33807424
[TBL] [Abstract][Full Text] [Related]
8. Characterization of nitride thin films by electron backscatter diffraction.
Trager-Cowan C; Sweeney F; Hastie J; Manson-Smith SK; Cowan DA; McColl D; Mohammed A; O'Donnell KP; Zubia D; Hersee SD; Foxon CT; Harrison I; Novikov SV
J Microsc; 2002 Mar; 205(Pt 3):226-30. PubMed ID: 11996185
[TBL] [Abstract][Full Text] [Related]
9. Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS₂.
Yin Y; Ren F; Wang Y; Liu Z; Ao J; Liang M; Wei T; Yuan G; Ou H; Yan J; Yi X; Wang J; Li J
Materials (Basel); 2018 Dec; 11(12):. PubMed ID: 30518146
[TBL] [Abstract][Full Text] [Related]
10. Epitaxial Growth of Sc
Bartoli F; Streque J; Ghanbaja J; Pigeat P; Boulet P; Hage-Ali S; Naumenko N; Redjaïmia A; Aubert T; Elmazria O
Sensors (Basel); 2020 Aug; 20(16):. PubMed ID: 32824582
[TBL] [Abstract][Full Text] [Related]
11. Structure and Optical Properties of AlN Crystals Grown by Metal Nitride Vapor Phase Epitaxy with Different V/III Ratios.
Xie L; Zhang H; Xie X; Wang E; Lin X; Song Y; Liu G; Chen G
ACS Omega; 2022 Jul; 7(27):23497-23502. PubMed ID: 35847283
[TBL] [Abstract][Full Text] [Related]
12. Group-III nitride heteroepitaxial films approaching bulk-class quality.
Wang J; Xie N; Xu F; Zhang L; Lang J; Kang X; Qin Z; Yang X; Tang N; Wang X; Ge W; Shen B
Nat Mater; 2023 Jul; 22(7):853-859. PubMed ID: 37349395
[TBL] [Abstract][Full Text] [Related]
13. Microstructure of Cu(x)Mo6S8 Chevrel phase thin films on R-plane sapphire.
Richard O; Van Tendeloo G ; Lemee N; Le Lannic J ; Guilloux-Viry M; Perrin A
J Electron Microsc (Tokyo); 2000; 49(3):493-501. PubMed ID: 11108040
[TBL] [Abstract][Full Text] [Related]
14. Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire.
Lin HF; Wu CT; Chien WC; Chen SW; Kao HL; Chyi JI; Chen JS
IEEE Trans Ultrason Ferroelectr Freq Control; 2005 May; 52(5):923-6. PubMed ID: 16048194
[TBL] [Abstract][Full Text] [Related]
15. Optical and Structural Properties of Aluminum Nitride Epi-Films at Room and High Temperature.
Yang Y; Liu Y; Wang L; Zhang S; Lu H; Peng Y; Wei W; Yang J; Feng ZC; Wan L; Klein B; Ferguson IT; Sun W
Materials (Basel); 2023 Nov; 16(23):. PubMed ID: 38068186
[TBL] [Abstract][Full Text] [Related]
16. Optimal Growth Conditions for Forming
Liu WS; Gururajan B; Wu SH; Huang LC; Chi CK; Jiang YL; Kuo HC
Micromachines (Basel); 2022 Sep; 13(9):. PubMed ID: 36144169
[TBL] [Abstract][Full Text] [Related]
17. Thermal Conductivity of β-Phase Ga
Song Y; Ranga P; Zhang Y; Feng Z; Huang HL; Santia MD; Badescu SC; Gonzalez-Valle CU; Perez C; Ferri K; Lavelle RM; Snyder DW; Klein BA; Deitz J; Baca AG; Maria JP; Ramos-Alvarado B; Hwang J; Zhao H; Wang X; Krishnamoorthy S; Foley BM; Choi S
ACS Appl Mater Interfaces; 2021 Aug; 13(32):38477-38490. PubMed ID: 34370459
[TBL] [Abstract][Full Text] [Related]
18. Ultrasmooth Epitaxial Pt Thin Films Grown by Pulsed Laser Deposition.
Torres-Castanedo CG; Buchholz DB; Pham T; Zheng L; Cheng M; Dravid VP; Hersam MC; Bedzyk MJ
ACS Appl Mater Interfaces; 2024 Jan; 16(1):1921-1929. PubMed ID: 38123145
[TBL] [Abstract][Full Text] [Related]
19. Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy.
Tasi CT; Wang WK; Ou SL; Huang SY; Horng RH; Wuu DS
Nanomaterials (Basel); 2018 Sep; 8(9):. PubMed ID: 30201865
[TBL] [Abstract][Full Text] [Related]
20. Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.
Shih HY; Lee WH; Kao WC; Chuang YC; Lin RM; Lin HC; Shiojiri M; Chen MJ
Sci Rep; 2017 Jan; 7():39717. PubMed ID: 28045075
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]