These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

169 related articles for article (PubMed ID: 37241634)

  • 1. Analysis of Trapping Effect on Large-Signal Characteristics of GaN HEMTs Using X-Parameters and UV Illumination.
    Chen KM; Lin CJ; Chuang CW; Pai HC; Chang EY; Huang GW
    Micromachines (Basel); 2023 May; 14(5):. PubMed ID: 37241634
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO
    Kim HS; Kang MJ; Kim JJ; Seo KS; Cha HY
    Materials (Basel); 2020 Mar; 13(7):. PubMed ID: 32230767
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications.
    Lee MW; Chuang CW; Gamiz F; Chang EY; Lin YC
    Micromachines (Basel); 2023 Dec; 15(1):. PubMed ID: 38258200
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer.
    Chang SJ; Kim DS; Kim TW; Lee JH; Bae Y; Jung HW; Kang SC; Kim H; Noh YS; Lee SH; Kim SI; Ahn HK; Lim JW
    Nanomaterials (Basel); 2020 Oct; 10(11):. PubMed ID: 33143313
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers.
    Guo H; Li Y; Yu X; Zhou J; Kong Y
    Micromachines (Basel); 2022 Sep; 13(9):. PubMed ID: 36144109
    [TBL] [Abstract][Full Text] [Related]  

  • 6. High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer.
    Im KS; Mallem SPR; Choi JS; Hwang YM; Roh JS; An SJ; Lee JH
    Nanomaterials (Basel); 2022 Feb; 12(4):. PubMed ID: 35214971
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Non-Buffer Epi-AlGaN/GaN on SiC for High-Performance Depletion-Mode MIS-HEMTs Fabrication.
    Zhang P; Wang L; Zhu K; Wang Q; Pan M; Huang Z; Yang Y; Xie X; Huang H; Hu X; Xu S; Xu M; Wang C; Wu C; Zhang DW
    Micromachines (Basel); 2023 Jul; 14(8):. PubMed ID: 37630059
    [TBL] [Abstract][Full Text] [Related]  

  • 8. A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer.
    Weng YC; Lin YC; Hsu HT; Kao ML; Huang HY; Ueda D; Ha MT; Yang CY; Maa JS; Chang EY; Dee CF
    Materials (Basel); 2022 Jan; 15(3):. PubMed ID: 35160649
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment.
    Yoon YJ; Lee JS; Suk JK; Kang IM; Lee JH; Lee EJ; Kim DS
    Micromachines (Basel); 2021 Jul; 12(8):. PubMed ID: 34442485
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiN
    Gao X; Guo H; Wang R; Pan D; Chen P; Chen D; Lu H; Zhang R; Zheng Y
    Micromachines (Basel); 2022 Aug; 13(9):. PubMed ID: 36144019
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al
    Chiu HC; Liu CH; Huang CR; Chiu CC; Wang HC; Kao HL; Lin SY; Chien FT
    Membranes (Basel); 2021 Sep; 11(10):. PubMed ID: 34677492
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Enhanced Operational Characteristics Attained by Applying HfO
    Choi JH; Kang WS; Kim D; Kim JH; Lee JH; Kim KY; Min BG; Kang DM; Kim HS
    Micromachines (Basel); 2023 May; 14(6):. PubMed ID: 37374686
    [TBL] [Abstract][Full Text] [Related]  

  • 13. An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band.
    Li J; Mao S; Xu Y; Zhao X; Wang W; Guo F; Zhang Q; Wu Y; Zhang B; Chen T; Yan B; Xu R; Li Y
    Micromachines (Basel); 2018 Aug; 9(8):. PubMed ID: 30424329
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Comprehensive Comparison of MOCVD- and LPCVD-SiN
    Deng L; Zhou L; Lu H; Yang L; Yu Q; Zhang M; Wu M; Hou B; Ma X; Hao Y
    Micromachines (Basel); 2023 Nov; 14(11):. PubMed ID: 38004961
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Boron Nitride as a Passivation Capping Layer for AlGaN/GaN High Electron Mobility Transistors.
    Lee GH; Park AH; Lim JH; Lee CH; Jeon DW; Kim YB; Lee J; Yang JW; Suh EK; Seo TH
    J Nanosci Nanotechnol; 2020 Jul; 20(7):4450-4453. PubMed ID: 31968494
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy.
    Omika K; Tateno Y; Kouchi T; Komatani T; Yaegassi S; Yui K; Nakata K; Nagamura N; Kotsugi M; Horiba K; Oshima M; Suemitsu M; Fukidome H
    Sci Rep; 2018 Sep; 8(1):13268. PubMed ID: 30185804
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review.
    Zou X; Yang J; Qiao Q; Zou X; Chen J; Shi Y; Ren K
    Micromachines (Basel); 2023 Oct; 14(11):. PubMed ID: 38004901
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator.
    Chang SJ; Kim DS; Kim TW; Bae Y; Jung HW; Choi IG; Noh YS; Lee SH; Kim SI; Ahn HK; Kang DM; Lim JW
    Nanomaterials (Basel); 2023 Feb; 13(5):. PubMed ID: 36903774
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Investigation on the I⁻V Kink Effect in Large Signal Modeling of AlGaN/GaN HEMTs.
    Mao S; Xu Y
    Micromachines (Basel); 2018 Nov; 9(11):. PubMed ID: 30400572
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Improved
    Xie X; Wang Q; Pan M; Zhang P; Wang L; Yang Y; Huang H; Hu X; Xu M
    Nanomaterials (Basel); 2024 Mar; 14(6):. PubMed ID: 38535670
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 9.