187 related articles for article (PubMed ID: 37280223)
1. Thermally stable threshold selector based on CuAg alloy for energy-efficient memory and neuromorphic computing applications.
Zhou X; Zhao L; Yan C; Zhen W; Lin Y; Li L; Du G; Lu L; Zhang ST; Lu Z; Li D
Nat Commun; 2023 Jun; 14(1):3285. PubMed ID: 37280223
[TBL] [Abstract][Full Text] [Related]
2. High-Uniformity Threshold Switching HfO
Li Y; Tang J; Gao B; Sun W; Hua Q; Zhang W; Li X; Zhang W; Qian H; Wu H
Adv Sci (Weinh); 2020 Nov; 7(22):2002251. PubMed ID: 33240773
[TBL] [Abstract][Full Text] [Related]
3. Realization of Artificial Nerve Synapses Based on Biological Threshold Resistive Random Access Memory.
Wang L; Zuo Z; Wen D
Adv Biol (Weinh); 2023 Jun; 7(6):e2200298. PubMed ID: 36650948
[TBL] [Abstract][Full Text] [Related]
4. Highly Reliable Threshold Switching Characteristics of Surface-Modulated Diffusive Memristors Immune to Atmospheric Changes.
Song YG; Kim JE; Kwon JU; Chun SY; Soh K; Nahm S; Kang CY; Yoon JH
ACS Appl Mater Interfaces; 2023 Feb; 15(4):5495-5503. PubMed ID: 36691225
[TBL] [Abstract][Full Text] [Related]
5. Investigating Selectorless Property within Niobium Devices for Storage Applications.
Chen PH; Lin CY; Chang TC; Eshraghian JK; Chao YT; Lu WD; Sze SM
ACS Appl Mater Interfaces; 2022 Jan; 14(1):2343-2350. PubMed ID: 34978410
[TBL] [Abstract][Full Text] [Related]
6. Low-Voltage Oscillatory Neurons for Memristor-Based Neuromorphic Systems.
Hua Q; Wu H; Gao B; Zhang Q; Wu W; Li Y; Wang X; Hu W; Qian H
Glob Chall; 2019 Nov; 3(11):1900015. PubMed ID: 31692992
[TBL] [Abstract][Full Text] [Related]
7. Versatile memristor for memory and neuromorphic computing.
Guo T; Pan K; Jiao Y; Sun B; Du C; Mills JP; Chen Z; Zhao X; Wei L; Zhou YN; Wu YA
Nanoscale Horiz; 2022 Feb; 7(3):299-310. PubMed ID: 35064257
[TBL] [Abstract][Full Text] [Related]
8. 1-Selector 1-Memristor Configuration with Multifunctional a-IGZO Memristive Devices Fabricated at Room Temperature.
Li JC; Ma YX; Wu SH; Liu ZC; Ding PF; Dai D; Ding YT; Zhang YY; Huang Y; Lai PT; Wang YL
ACS Appl Mater Interfaces; 2024 Apr; 16(14):17766-17777. PubMed ID: 38534058
[TBL] [Abstract][Full Text] [Related]
9. A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X-Point Memory Applications.
Hua Q; Wu H; Gao B; Zhao M; Li Y; Li X; Hou X; Marvin Chang MF; Zhou P; Qian H
Adv Sci (Weinh); 2019 May; 6(10):1900024. PubMed ID: 31131198
[TBL] [Abstract][Full Text] [Related]
10. An Effective Sneak-Path Solution Based on a Transient-Relaxation Device.
Fu T; Fu S; Sun L; Gao H; Yao J
Adv Mater; 2023 Jan; 35(1):e2207133. PubMed ID: 36222395
[TBL] [Abstract][Full Text] [Related]
11. Amorphous ITZO-Based Selector Device for Memristor Crossbar Array.
Kim KH; Seo MJ; Jang BC
Micromachines (Basel); 2023 Feb; 14(3):. PubMed ID: 36984913
[TBL] [Abstract][Full Text] [Related]
12. Synapse-Mimetic Hardware-Implemented Resistive Random-Access Memory for Artificial Neural Network.
Seok H; Son S; Jathar SB; Lee J; Kim T
Sensors (Basel); 2023 Mar; 23(6):. PubMed ID: 36991829
[TBL] [Abstract][Full Text] [Related]
13. Reconfigurable Resistive Switching in VO
Kunwar S; Cucciniello N; Mazza AR; Zhang D; Santillan L; Freiman B; Roy P; Jia Q; MacManus-Driscoll JL; Wang H; Nie W; Chen A
ACS Appl Mater Interfaces; 2024 Apr; 16(15):19103-19111. PubMed ID: 38578811
[TBL] [Abstract][Full Text] [Related]
14. Tunable Resistive Switching in 2D MXene Ti
Zhang X; Chen H; Cheng S; Guo F; Jie W; Hao J
ACS Appl Mater Interfaces; 2022 Oct; 14(39):44614-44621. PubMed ID: 36136123
[TBL] [Abstract][Full Text] [Related]
15. Research progress on solutions to the sneak path issue in memristor crossbar arrays.
Shi L; Zheng G; Tian B; Dkhil B; Duan C
Nanoscale Adv; 2020 May; 2(5):1811-1827. PubMed ID: 36132530
[TBL] [Abstract][Full Text] [Related]
16. Super-Linear-Threshold-Switching Selector with Multiple Jar-Shaped Cu-Filaments in the Amorphous Ge
Kim HJ; Woo DS; Jin SM; Kwon HJ; Kwon KH; Kim DW; Park DH; Kim DE; Jin HU; Choi HD; Shim TH; Park JG
Adv Mater; 2022 Oct; 34(40):e2203643. PubMed ID: 35980937
[TBL] [Abstract][Full Text] [Related]
17. Thermally Oxidized Memristor and 1T1R Integration for Selector Function and Low-Power Memory.
Pan Z; Zhang J; Liu X; Zhao L; Ma J; Luo C; Sun Y; Dan Z; Gao W; Lu X; Li J; Huo N
Adv Sci (Weinh); 2024 Jul; ():e2401915. PubMed ID: 38958519
[TBL] [Abstract][Full Text] [Related]
18. Highly Reliable Ovonic Threshold Switch with TiN/GeTe/TiN Structure.
Seong D; Lee SY; Seo HK; Kim JW; Park M; Yang MK
Materials (Basel); 2023 Mar; 16(5):. PubMed ID: 36903180
[TBL] [Abstract][Full Text] [Related]
19. Experimental demonstration of highly reliable dynamic memristor for artificial neuron and neuromorphic computing.
Park SO; Jeong H; Park J; Bae J; Choi S
Nat Commun; 2022 Jun; 13(1):2888. PubMed ID: 35660724
[TBL] [Abstract][Full Text] [Related]
20. Frequency-Dependent Synapse Weight Tuning in 1S1R with a Short-Term Plasticity TiO
Chee MY; Dananjaya PA; Lim GJ; Du Y; Lew WS
ACS Appl Mater Interfaces; 2022 Aug; 14(31):35959-35968. PubMed ID: 35892238
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
