138 related articles for article (PubMed ID: 37287443)
1. Quasi-2D Lead-Tin Perovskite Memory Devices Fabricated by Blade Coating.
Chen L; Xi J; Tekelenburg EK; Tran K; Portale G; Brabec CJ; Loi MA
Small Methods; 2024 Feb; 8(2):e2300040. PubMed ID: 37287443
[TBL] [Abstract][Full Text] [Related]
2. Solution-Processed Synaptic Memristors Based on Halide Perovskite Nanocrystals.
Liu S; Guan J; Yin L; Zhou L; Huang J; Mu Y; Han S; Pi X; Liu G; Gao P; Zhou S
J Phys Chem Lett; 2022 Dec; 13(47):10994-11000. PubMed ID: 36404608
[TBL] [Abstract][Full Text] [Related]
3. Resistive switching in benzylammonium-based Ruddlesden-Popper layered hybrid perovskites for non-volatile memory and neuromorphic computing.
Ganaie MM; Bravetti G; Sahu S; Kumar M; Milić JV
Mater Adv; 2024 Mar; 5(5):1880-1886. PubMed ID: 38444935
[TBL] [Abstract][Full Text] [Related]
4. The coexistence of threshold and memory switching characteristics of ALD HfO
Abbas H; Abbas Y; Hassan G; Sokolov AS; Jeon YR; Ku B; Kang CJ; Choi C
Nanoscale; 2020 Jul; 12(26):14120-14134. PubMed ID: 32597451
[TBL] [Abstract][Full Text] [Related]
5. Organometal Halide Perovskite Artificial Synapses.
Xu W; Cho H; Kim YH; Kim YT; Wolf C; Park CG; Lee TW
Adv Mater; 2016 Jul; 28(28):5916-22. PubMed ID: 27167384
[TBL] [Abstract][Full Text] [Related]
6. Room-Temperature Fabricated Multilevel Nonvolatile Lead-Free Cesium Halide Memristors for Reconfigurable In-Memory Computing.
Su TK; Cheng WK; Chen CY; Wang WC; Chuang YT; Tan GH; Lin HC; Hou CH; Liu CM; Chang YC; Shyue JJ; Wu KC; Lin HW
ACS Nano; 2022 Aug; 16(8):12979-12990. PubMed ID: 35815946
[TBL] [Abstract][Full Text] [Related]
7. Ambient Stable All Inorganic CsCu
Kwak KJ; Baek JH; Lee DE; Im IH; Kim J; Kim SJ; Lee YJ; Kim JY; Jang HW
Nano Lett; 2022 Jul; 22(14):6010-6017. PubMed ID: 35675157
[TBL] [Abstract][Full Text] [Related]
8. Resistive switching memories with enhanced durability enabled by mixed-dimensional perfluoroarene perovskite heterostructures.
Loizos M; Rogdakis K; Luo W; Zimmermann P; Hinderhofer A; Lukić J; Tountas M; Schreiber F; Milić JV; Kymakis E
Nanoscale Horiz; 2024 Jun; 9(7):1146-1154. PubMed ID: 38767026
[TBL] [Abstract][Full Text] [Related]
9. Ionotronic Halide Perovskite Drift-Diffusive Synapses for Low-Power Neuromorphic Computation.
John RA; Yantara N; Ng YF; Narasimman G; Mosconi E; Meggiolaro D; Kulkarni MR; Gopalakrishnan PK; Nguyen CA; De Angelis F; Mhaisalkar SG; Basu A; Mathews N
Adv Mater; 2018 Dec; 30(51):e1805454. PubMed ID: 30334296
[TBL] [Abstract][Full Text] [Related]
10. Nonvolatile resistive switching and synaptic characteristics of lead-free all-inorganic perovskite-based flexible memristive devices for neuromorphic systems.
Siddik A; Haldar PK; Paul T; Das U; Barman A; Roy A; Sarkar PK
Nanoscale; 2021 May; 13(19):8864-8874. PubMed ID: 33949417
[TBL] [Abstract][Full Text] [Related]
11. Element Regulation and Dimensional Engineering Co-Optimization of Perovskite Memristors for Synaptic Plasticity Applications.
Wang Y; Guo D; Jiang J; Wang H; Shang Y; Zheng J; Huang R; Li W; Wang S
ACS Appl Mater Interfaces; 2024 Mar; 16(10):12277-12288. PubMed ID: 38422456
[TBL] [Abstract][Full Text] [Related]
12. Halide Perovskites for Resistive Switching Memory.
Kang K; Hu W; Tang X
J Phys Chem Lett; 2021 Dec; 12(48):11673-11682. PubMed ID: 34842437
[TBL] [Abstract][Full Text] [Related]
13. Short-Term Memory Dynamics of TiN/Ti/TiO
Cho H; Kim S
Nanomaterials (Basel); 2020 Sep; 10(9):. PubMed ID: 32932656
[TBL] [Abstract][Full Text] [Related]
14. A Synaptic Transistor based on Quasi-2D Molybdenum Oxide.
Yang CS; Shang DS; Liu N; Shi G; Shen X; Yu RC; Li YQ; Sun Y
Adv Mater; 2017 Jul; 29(27):. PubMed ID: 28485032
[TBL] [Abstract][Full Text] [Related]
15. Tunable Resistive Switching in 2D MXene Ti
Zhang X; Chen H; Cheng S; Guo F; Jie W; Hao J
ACS Appl Mater Interfaces; 2022 Oct; 14(39):44614-44621. PubMed ID: 36136123
[TBL] [Abstract][Full Text] [Related]
16. Tailored 2D/3D Halide Perovskite Heterointerface for Substantially Enhanced Endurance in Conducting Bridge Resistive Switching Memory.
Lee S; Kim H; Kim DH; Kim WB; Lee JM; Choi J; Shin H; Han GS; Jang HW; Jung HS
ACS Appl Mater Interfaces; 2020 Apr; 12(14):17039-17045. PubMed ID: 32174107
[TBL] [Abstract][Full Text] [Related]
17. A Strategy to Design High-Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials.
Hwang B; Lee JS
Adv Mater; 2017 Aug; 29(29):. PubMed ID: 28558134
[TBL] [Abstract][Full Text] [Related]
18. Ultrafast and Low-Power 2D Bi
Dong Z; Hua Q; Xi J; Shi Y; Huang T; Dai X; Niu J; Wang B; Wang ZL; Hu W
Nano Lett; 2023 May; 23(9):3842-3850. PubMed ID: 37093653
[TBL] [Abstract][Full Text] [Related]
19. Perovskite-related (CH
Yang JM; Choi ES; Kim SY; Kim JH; Park JH; Park NG
Nanoscale; 2019 Mar; 11(13):6453-6461. PubMed ID: 30892306
[TBL] [Abstract][Full Text] [Related]
20. Amorphous Boron Nitride Memristive Device for High-Density Memory and Neuromorphic Computing Applications.
Khot AC; Dongale TD; Nirmal KA; Sung JH; Lee HJ; Nikam RD; Kim TG
ACS Appl Mater Interfaces; 2022 Mar; 14(8):10546-10557. PubMed ID: 35179364
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
