These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

133 related articles for article (PubMed ID: 37319083)

  • 1. Temperature-independent lasing wavelength of highly stacked InAs quantum dot laser fabricated on InP(311)B substrate with Bi irradiation.
    Yanase S; Akahane K; Matsumoto A; Umezawa T; Yamamoto N; Tominaga Y; Kanno A; Maeda T; Sotobayashi H
    Opt Lett; 2023 Jun; 48(12):3287-3290. PubMed ID: 37319083
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Wavelength shift of InP-based InAs quantum dot lasers above room temperature.
    Kim JS; Lee CR; Seol KW; Oh DK
    J Nanosci Nanotechnol; 2007 Dec; 7(12):4443-6. PubMed ID: 18283826
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Electrically pumped InP/GaAsP quantum dot lasers grown on (001) Si emitting at 750 nm.
    Luo W; Lin L; Huang J; Lin Q; Lau KM
    Opt Express; 2022 Oct; 30(22):40750-40755. PubMed ID: 36299004
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Lasing characteristics of InP-based InAs quantum dots depending on InGaAsP waveguide conditions.
    Jo B; Lee H; Choi I; Kim J; Kim JS; Han WS; Song JH; Oh DK; Noh SK; Leem JY
    J Nanosci Nanotechnol; 2014 Dec; 14(12):9623-7. PubMed ID: 25971109
    [TBL] [Abstract][Full Text] [Related]  

  • 5. InAs/InGaAs Quantum Dot Lasers on Multi-Functional Metamorphic Buffer Layers.
    Kwoen J; Imoto T; Arakawa Y
    Opt Express; 2021 Aug; 29(18):29378-29386. PubMed ID: 34615048
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Electrically pumped 1.5  μm InP-based quantum dot microring lasers directly grown on (001) Si.
    Zhu S; Shi B; Lau KM
    Opt Lett; 2019 Sep; 44(18):4566-4569. PubMed ID: 31517932
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature.
    Zhang G; Takiguchi M; Tateno K; Tawara T; Notomi M; Gotoh H
    Sci Adv; 2019 Feb; 5(2):eaat8896. PubMed ID: 30801006
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Continuous-wave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities.
    Lee A; Jiang Q; Tang M; Seeds A; Liu H
    Opt Express; 2012 Sep; 20(20):22181-7. PubMed ID: 23037366
    [TBL] [Abstract][Full Text] [Related]  

  • 9. High performance 2150 nm-emitting InAs/InGaAs/InP quantum well lasers grown by metalorganic vapor phase epitaxy.
    Luo S; Ji HM; Gao F; Xu F; Yang XG; Liang P; Yang T
    Opt Express; 2015 Apr; 23(7):8383-8. PubMed ID: 25968677
    [TBL] [Abstract][Full Text] [Related]  

  • 10. C and L band room-temperature continuous-wave InP-based microdisk lasers grown on silicon.
    Lin L; Xue Y; Li J; Luo W; Huang J; Lau KM
    Opt Lett; 2021 Jun; 46(12):2836-2839. PubMed ID: 34129553
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Phosphorus-free 1.5  µm InAs quantum-dot microdisk lasers on metamorphic InGaAs/SOI platform.
    Wei WQ; Zhang JY; Wang JH; Cong H; Guo JJ; Wang ZH; Xu HX; Wang T; Zhang JJ
    Opt Lett; 2020 Apr; 45(7):2042-2045. PubMed ID: 32236063
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Parametric study of high-performance 1.55 μm InAs quantum dot microdisk lasers on Si.
    Zhu S; Shi B; Li Q; Wan Y; Lau KM
    Opt Express; 2017 Dec; 25(25):31281-31293. PubMed ID: 29245805
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Ground state lasing at 1.30 microm from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition.
    Guimard D; Ishida M; Bordel D; Li L; Nishioka M; Tanaka Y; Ekawa M; Sudo H; Yamamoto T; Kondo H; Sugawara M; Arakawa Y
    Nanotechnology; 2010 Mar; 21(10):105604. PubMed ID: 20160334
    [TBL] [Abstract][Full Text] [Related]  

  • 14. An L-band monolithic InAs/InP quantum dot mode-locked laser with femtosecond pulses.
    Lu ZG; Liu JR; Poole PJ; Raymond S; Barrios PJ; Poitras D; Pakulski G; Grant P; Roy-Guay D
    Opt Express; 2009 Aug; 17(16):13609-14. PubMed ID: 19654768
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Lasing characteristics of InAs quantum dot microcavity lasers as a function of temperature and wavelength.
    Yang T; Mock A; O'Brien JD; Lipson S; Deppe DG
    Opt Express; 2007 Jun; 15(12):7281-9. PubMed ID: 19547051
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Carrier dynamics and lasing behavior of InAs/GaAs quantum dot lasers with short cavity lengths.
    Yao ZH; Wang X; Chen HM; Wang T; Qin L; Liu J; Zhang ZY
    Nanotechnology; 2021 Oct; 33(3):. PubMed ID: 34644680
    [TBL] [Abstract][Full Text] [Related]  

  • 17. E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate.
    Liang W; Wei W; Han D; Ming M; Zhang J; Wang Z; Zhang X; Wang T; Zhang J
    Materials (Basel); 2024 Apr; 17(8):. PubMed ID: 38673273
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers.
    Su XB; Ding Y; Ma B; Zhang KL; Chen ZS; Li JL; Cui XR; Xu YQ; Ni HQ; Niu ZC
    Nanoscale Res Lett; 2018 Feb; 13(1):59. PubMed ID: 29468483
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser.
    Du Y; Wei W; Xu B; Wang G; Li B; Miao Y; Zhao X; Kong Z; Lin H; Yu J; Su J; Dong Y; Wang W; Ye T; Zhang J; Radamson HH
    Micromachines (Basel); 2022 Sep; 13(10):. PubMed ID: 36295932
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Two-state lasing in a quantum dot racetrack microlaser.
    Makhov I; Ivanov K; Moiseev E; Dragunova A; Fominykh N; Kryzhanovskaya N; Zhukov A
    Opt Lett; 2023 Jul; 48(13):3515-3518. PubMed ID: 37390169
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.