These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

144 related articles for article (PubMed ID: 37338077)

  • 1. Polarized Tunneling Transistor for Ultrafast Memory.
    Chen J; Dun G; Hu J; Lin Z; Wang Y; Lu T; Li P; Wei T; Zhu J; Wang J; Li X; Wu XM; Yang Y; Ren TL
    ACS Nano; 2023 Jul; 17(13):12374-12382. PubMed ID: 37338077
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Polarized Tunneling Transistor for Ultralow-Energy-Consumption Artificial Synapse toward Neuromorphic Computing.
    Chen J; Zhao XC; Zhu YQ; Wang ZH; Zhang Z; Sun MY; Wang S; Zhang Y; Han L; Wu XM; Ren TL
    ACS Nano; 2024 Jan; 18(1):581-591. PubMed ID: 38126349
    [TBL] [Abstract][Full Text] [Related]  

  • 3. High-Speed Optoelectronic Nonvolatile Memory Based on van der Waals Heterostructures.
    Wang W; Jin J; Wang Y; Wei Z; Xu Y; Peng Z; Liu H; Wang Y; You J; Impundu J; Zheng Q; Li YJ; Sun L
    Small; 2023 Nov; 19(47):e2304730. PubMed ID: 37480188
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Symmetric Ultrafast Writing and Erasing Speeds in Quasi-Nonvolatile Memory via van der Waals Heterostructures.
    Li J; Liu L; Chen X; Liu C; Wang J; Hu W; Zhang DW; Zhou P
    Adv Mater; 2019 Mar; 31(11):e1808035. PubMed ID: 30687966
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Ultrafast non-volatile flash memory based on van der Waals heterostructures.
    Liu L; Liu C; Jiang L; Li J; Ding Y; Wang S; Jiang YG; Sun YB; Wang J; Chen S; Zhang DW; Zhou P
    Nat Nanotechnol; 2021 Aug; 16(8):874-881. PubMed ID: 34083773
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Uncovering the Role of Crystal Phase in Determining Nonvolatile Flash Memory Device Performance Fabricated from MoTe
    Xia Y; Zha J; Huang H; Wang H; Yang P; Zheng L; Zhang Z; Yang Z; Chen Y; Chan HP; Ho JC; Tan C
    ACS Appl Mater Interfaces; 2023 Jul; 15(29):35196-35205. PubMed ID: 37459597
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Ultrafast Non-Volatile Floating-Gate Memory Based on All-2D Materials.
    Wang H; Guo H; Guzman R; JiaziLa N; Wu K; Wang A; Liu X; Liu L; Wu L; Chen J; Huan Q; Zhou W; Yang H; Pantelides ST; Bao L; Gao HJ
    Adv Mater; 2024 Jun; 36(24):e2311652. PubMed ID: 38502781
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Van der Waals engineering of ferroelectric heterostructures for long-retention memory.
    Wang X; Zhu C; Deng Y; Duan R; Chen J; Zeng Q; Zhou J; Fu Q; You L; Liu S; Edgar JH; Yu P; Liu Z
    Nat Commun; 2021 Feb; 12(1):1109. PubMed ID: 33597507
    [TBL] [Abstract][Full Text] [Related]  

  • 9. A semi-floating gate transistor for low-voltage ultrafast memory and sensing operation.
    Wang PF; Lin X; Liu L; Sun QQ; Zhou P; Liu XY; Liu W; Gong Y; Zhang DW
    Science; 2013 Aug; 341(6146):640-3. PubMed ID: 23929978
    [TBL] [Abstract][Full Text] [Related]  

  • 10. An Ultrafast Multibit Memory Based on the ReS
    Lu H; Wang Y; Han X; Liu J
    ACS Nano; 2024 Aug; 18(34):23403-23411. PubMed ID: 39088760
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer.
    Li Y; Zhang ZC; Li J; Chen XD; Kong Y; Wang FD; Zhang GX; Lu TB; Zhang J
    Nat Commun; 2022 Aug; 13(1):4591. PubMed ID: 35933437
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Nonvolatile Transistor Memory with Self-Assembled Semiconducting Polymer Nanodomain Floating Gates.
    Wang W; Kim KL; Cho SM; Lee JH; Park C
    ACS Appl Mater Interfaces; 2016 Dec; 8(49):33863-33873. PubMed ID: 27960399
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS
    Wu H; Cui Y; Xu J; Yan Z; Xie Z; Hu Y; Zhu S
    Nano Lett; 2022 Mar; 22(6):2328-2333. PubMed ID: 35254079
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Flexible Nonvolatile Transistor Memory with Solution-Processed Transition Metal Dichalcogenides.
    Kim RH; Lee J; Kim KL; Cho SM; Kim DH; Park C
    Small; 2017 May; 13(20):. PubMed ID: 28371305
    [TBL] [Abstract][Full Text] [Related]  

  • 15. One-Transistor-One-Transistor (1T1T) Optoelectronic Nonvolatile MoS
    Lee D; Kim S; Kim Y; Cho JH
    ACS Appl Mater Interfaces; 2017 Aug; 9(31):26357-26362. PubMed ID: 28707472
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Visible Light-Erasable Oxide FET-Based Nonvolatile Memory Operated with a Deep Trap Interface.
    Kim T; Lim JW; Lee SH; Na J; Jeong J; Jung KH; Kim G; Yun SJ
    ACS Appl Mater Interfaces; 2018 Aug; 10(31):26405-26412. PubMed ID: 29998730
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of
    Sasaki T; Ueno K; Taniguchi T; Watanabe K; Nishimura T; Nagashio K
    ACS Appl Mater Interfaces; 2022 Jun; 14(22):25659-25669. PubMed ID: 35604943
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Two-Terminal Multibit Optical Memory via van der Waals Heterostructure.
    Tran MD; Kim H; Kim JS; Doan MH; Chau TK; Vu QA; Kim JH; Lee YH
    Adv Mater; 2019 Feb; 31(7):e1807075. PubMed ID: 30589128
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Gate-Coupling-Enabled Robust Hysteresis for Nonvolatile Memory and Programmable Rectifier in Van der Waals Ferroelectric Heterojunctions.
    Huang W; Wang F; Yin L; Cheng R; Wang Z; Sendeku MG; Wang J; Li N; Yao Y; He J
    Adv Mater; 2020 Apr; 32(14):e1908040. PubMed ID: 32080924
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory.
    Sasaki T; Ueno K; Taniguchi T; Watanabe K; Nishimura T; Nagashio K
    ACS Nano; 2021 Apr; 15(4):6658-6668. PubMed ID: 33765381
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.