These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

356 related articles for article (PubMed ID: 37368309)

  • 21. Memristive and CMOS Devices for Neuromorphic Computing.
    Milo V; Malavena G; Monzio Compagnoni C; Ielmini D
    Materials (Basel); 2020 Jan; 13(1):. PubMed ID: 31906325
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Resistive Switching Characteristics of Alloyed AlSiO
    Lee Y; Jang J; Jeon B; Lee K; Chung D; Kim S
    Materials (Basel); 2022 Oct; 15(21):. PubMed ID: 36363111
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Wafer scale WS2 based ultrafast photosensing and memory computing devices for neuromorphic computing.
    B S; Dwivedi P
    Nanotechnology; 2024 Jul; ():. PubMed ID: 38976970
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Self-Rectifying Memristors for Three-Dimensional In-Memory Computing.
    Ren SG; Dong AW; Yang L; Xue YB; Li JC; Yu YJ; Zhou HJ; Zuo WB; Li Y; Cheng WM; Miao XS
    Adv Mater; 2024 Jan; 36(4):e2307218. PubMed ID: 37972344
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing.
    Zahoor F; Hussin FA; Isyaku UB; Gupta S; Khanday FA; Chattopadhyay A; Abbas H
    Discov Nano; 2023 Mar; 18(1):36. PubMed ID: 37382679
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Vertical MoS
    Xu R; Jang H; Lee MH; Amanov D; Cho Y; Kim H; Park S; Shin HJ; Ham D
    Nano Lett; 2019 Apr; 19(4):2411-2417. PubMed ID: 30896171
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions.
    Sánta B; Molnár D; Haiber P; Gubicza A; Szilágyi E; Zolnai Z; Halbritter A; Csontos M
    Beilstein J Nanotechnol; 2020; 11():92-100. PubMed ID: 31976200
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering.
    Ismail M; Mahata C; Kang M; Kim S
    Nanoscale Res Lett; 2022 Jun; 17(1):61. PubMed ID: 35749003
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Sputtering-deposited amorphous SrVO
    Lee TJ; Kim SK; Seong TY
    Sci Rep; 2020 Apr; 10(1):5761. PubMed ID: 32238846
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Nanoscale resistive switching devices: mechanisms and modeling.
    Yang Y; Lu W
    Nanoscale; 2013 Nov; 5(21):10076-92. PubMed ID: 24057010
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Self-Powered Memristive Systems for Storage and Neuromorphic Computing.
    Shi J; Wang Z; Tao Y; Xu H; Zhao X; Lin Y; Liu Y
    Front Neurosci; 2021; 15():662457. PubMed ID: 33867930
    [TBL] [Abstract][Full Text] [Related]  

  • 32. GeTe/MoTe
    Khot AC; Nirmal KA; Dongale TD; Kim TG
    Small; 2024 Jun; ():e2400791. PubMed ID: 38874088
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Reconfigurable Resistive Switching in VO
    Kunwar S; Cucciniello N; Mazza AR; Zhang D; Santillan L; Freiman B; Roy P; Jia Q; MacManus-Driscoll JL; Wang H; Nie W; Chen A
    ACS Appl Mater Interfaces; 2024 Apr; 16(15):19103-19111. PubMed ID: 38578811
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Resistive Memory Devices at the Thinnest Limit: Progress and Challenges.
    Li XD; Chen NK; Wang BQ; Niu M; Xu M; Miao X; Li XB
    Adv Mater; 2024 Apr; 36(15):e2307951. PubMed ID: 38197585
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Parylene Based Memristive Devices with Multilevel Resistive Switching for Neuromorphic Applications.
    Minnekhanov AA; Emelyanov AV; Lapkin DA; Nikiruy KE; Shvetsov BS; Nesmelov AA; Rylkov VV; Demin VA; Erokhin VV
    Sci Rep; 2019 Jul; 9(1):10800. PubMed ID: 31346245
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Opportunity of the Lead-Free All-Inorganic Cs
    Zeng F; Guo Y; Hu W; Tan Y; Zhang X; Feng J; Tang X
    ACS Appl Mater Interfaces; 2020 May; 12(20):23094-23101. PubMed ID: 32336082
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Thousands of conductance levels in memristors integrated on CMOS.
    Rao M; Tang H; Wu J; Song W; Zhang M; Yin W; Zhuo Y; Kiani F; Chen B; Jiang X; Liu H; Chen HY; Midya R; Ye F; Jiang H; Wang Z; Wu M; Hu M; Wang H; Xia Q; Ge N; Li J; Yang JJ
    Nature; 2023 Mar; 615(7954):823-829. PubMed ID: 36991190
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO
    Choi J; Kim S
    Micromachines (Basel); 2020 Sep; 11(10):. PubMed ID: 33003640
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing.
    Tang B; Veluri H; Li Y; Yu ZG; Waqar M; Leong JF; Sivan M; Zamburg E; Zhang YW; Wang J; Thean AV
    Nat Commun; 2022 Jun; 13(1):3037. PubMed ID: 35650181
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Resistive switching and role of interfaces in memristive devices based on amorphous NbO
    Leonetti G; Fretto M; Bejtka K; Olivetti ES; Pirri FC; De Leo N; Valov I; Milano G
    Phys Chem Chem Phys; 2023 May; 25(21):14766-14777. PubMed ID: 37145117
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 18.