These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

112 related articles for article (PubMed ID: 37377150)

  • 1. Low-energy electron interaction with 2-(trifluoromethyl)acrylic acid, a potential component for EUVL resist material.
    Tafrishi R; Torres-Diaz D; Amiaud L; Lafosse A; Ingólfsson O
    Phys Chem Chem Phys; 2023 Jul; 25(27):17987-17998. PubMed ID: 37377150
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Electron-induced fragmentation mechanisms in organic monomers and their implications for photoresist optimization for EUV lithography.
    Rathore A; Cipriani M; Huang CC; Amiaud L; Dablemont C; Lafosse A; Ingólfsson O; De Simone D; De Gendt S
    Phys Chem Chem Phys; 2021 Apr; 23(15):9228-9234. PubMed ID: 33885061
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Role of low-energy electrons in the solubility switch of Zn-based oxocluster photoresist for extreme ultraviolet lithography.
    Rohdenburg M; Thakur N; Cartaya R; Castellanos S; Swiderek P
    Phys Chem Chem Phys; 2021 Aug; 23(31):16646-16657. PubMed ID: 34323899
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Dissociative ionization and electron beam induced deposition of tetrakis(dimethylamino)silane, a precursor for silicon nitride deposition.
    Shih PY; Tafrishi R; Cipriani M; Hermanns CF; Oster J; Gölzhäuser A; Edinger K; Ingólfsson O
    Phys Chem Chem Phys; 2022 Apr; 24(16):9564-9575. PubMed ID: 35395668
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Fundamental understanding of chemical processes in extreme ultraviolet resist materials.
    Kostko O; Xu B; Ahmed M; Slaughter DS; Ogletree DF; Closser KD; Prendergast DG; Naulleau P; Olynick DL; Ashby PD; Liu Y; Hinsberg WD; Wallraff GM
    J Chem Phys; 2018 Oct; 149(15):154305. PubMed ID: 30342450
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Line-Edge Roughness Stochastics for 5-nm Pattern Formation in the Extreme Ultraviolet Lithography.
    Kim SK
    J Nanosci Nanotechnol; 2019 Aug; 19(8):4657-4660. PubMed ID: 30913764
    [TBL] [Abstract][Full Text] [Related]  

  • 7. HF Formation through Dissociative Electron Attachment-A Combined Experimental and Theoretical Study on Pentafluorothiophenol and 2-Fluorothiophenol.
    Cipriani M; Ingólfsson O
    Int J Mol Sci; 2022 Feb; 23(5):. PubMed ID: 35269573
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Resist Materials for Extreme Ultraviolet Lithography: Toward Low-Cost Single-Digit-Nanometer Patterning.
    Ashby PD; Olynick DL; Ogletree DF; Naulleau PP
    Adv Mater; 2015 Oct; 27(38):5813-9. PubMed ID: 26079187
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Key Role of Very Low Energy Electrons in Tin-Based Molecular Resists for Extreme Ultraviolet Nanolithography.
    Bespalov I; Zhang Y; Haitjema J; Tromp RM; van der Molen SJ; Brouwer AM; Jobst J; Castellanos S
    ACS Appl Mater Interfaces; 2020 Feb; 12(8):9881-9889. PubMed ID: 32019303
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Molecular rearrangement reactions in the gas phase triggered by electron attachment.
    Omarsson B; Bjarnason EH; Haughey SA; Field TA; Abramov A; Klüpfel P; Jónsson H; Ingólfsson O
    Phys Chem Chem Phys; 2013 Apr; 15(13):4754-66. PubMed ID: 23435729
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Low-energy electron interaction and focused electron beam-induced deposition of molybdenum hexacarbonyl (Mo(CO)
    Shih PY; Cipriani M; Hermanns CF; Oster J; Edinger K; Gölzhäuser A; Ingólfsson O
    Beilstein J Nanotechnol; 2022; 13():182-191. PubMed ID: 35186652
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Gas phase low energy electron induced decomposition of the focused electron beam induced deposition (FEBID) precursor trimethyl (methylcyclopentadienyl) platinum(IV) (MeCpPtMe3).
    Engmann S; Stano M; Matejčík S; Ingólfsson O
    Phys Chem Chem Phys; 2012 Nov; 14(42):14611-8. PubMed ID: 23032785
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Mechanistic Advantages of Organotin Molecular EUV Photoresists.
    Ma JH; Needham C; Wang H; Neureuther A; Prendergast D; Naulleau P
    ACS Appl Mater Interfaces; 2022 Feb; 14(4):5514-5524. PubMed ID: 35073690
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Inelastic electron interaction (attachment/ionization) with deoxyribose.
    Ptasińska S; Denifl S; Scheier P; Märk TD
    J Chem Phys; 2004 May; 120(18):8505-11. PubMed ID: 15267776
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Negative ion formation and fragmentation upon dissociative electron attachment to the nicotinamide molecule.
    Ziegler P; Pelc A; Arthur-Baidoo E; Ameixa J; Ončák M; Denifl S
    RSC Adv; 2021 Sep; 11(51):32425-32434. PubMed ID: 35495526
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Absolute cross sections for dissociative electron attachment and dissociative ionization of cobalt tricarbonyl nitrosyl in the energy range from 0 eV to 140 eV.
    Engmann S; Stano M; Papp P; Brunger MJ; Matejčík Š; Ingólfsson O
    J Chem Phys; 2013 Jan; 138(4):044305. PubMed ID: 23387582
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Fragmentation dynamics and absolute dissociative electron attachment cross sections in the low energy electron collision with ethanol.
    Paul A; Ghosh S; Nandi D
    Phys Chem Chem Phys; 2023 Oct; 25(41):28263-28271. PubMed ID: 37830258
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Dielectric Response Spectroscopy as Means to Investigate Interfacial Effects for Ultra-Thin Film Polymer-Based High NA EUV Lithography.
    Severi J; De Simone D; De Gendt S
    Polymers (Basel); 2020 Dec; 12(12):. PubMed ID: 33322737
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Low energy electron-induced decomposition of (η
    Thorman RM; Unlu I; Johnson K; Bjornsson R; McElwee-White L; Fairbrother DH; Ingólfsson O
    Phys Chem Chem Phys; 2018 Feb; 20(8):5644-5656. PubMed ID: 29412202
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Line-Edge Roughness from Extreme Ultraviolet Lithography to Fin-Field-Effect-Transistor: Computational Study.
    Kim SK
    Micromachines (Basel); 2021 Nov; 12(12):. PubMed ID: 34945342
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.