These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
2. Temperature Evolution of Two-State Lasing in Microdisk Lasers with InAs/InGaAs Quantum Dots. Makhov I; Ivanov K; Moiseev E; Fominykh N; Dragunova A; Kryzhanovskaya N; Zhukov A Nanomaterials (Basel); 2023 Feb; 13(5):. PubMed ID: 36903756 [TBL] [Abstract][Full Text] [Related]
3. Dynamics of Broadband Lasing Cascade from a Single Dot-in-well InGaAs Microdisk. Talalaev V; Kryzhanovskaya N; Tomm JW; Rutckaia V; Schilling J; Zhukov A Sci Rep; 2019 Apr; 9(1):5635. PubMed ID: 30948736 [TBL] [Abstract][Full Text] [Related]
4. Temperature-independent lasing wavelength of highly stacked InAs quantum dot laser fabricated on InP(311)B substrate with Bi irradiation. Yanase S; Akahane K; Matsumoto A; Umezawa T; Yamamoto N; Tominaga Y; Kanno A; Maeda T; Sotobayashi H Opt Lett; 2023 Jun; 48(12):3287-3290. PubMed ID: 37319083 [TBL] [Abstract][Full Text] [Related]
5. Lasing characteristics of InAs quantum dot microcavity lasers as a function of temperature and wavelength. Yang T; Mock A; O'Brien JD; Lipson S; Deppe DG Opt Express; 2007 Jun; 15(12):7281-9. PubMed ID: 19547051 [TBL] [Abstract][Full Text] [Related]
6. Multimode optical feedback dynamics in InAs/GaAs quantum dot lasers emitting exclusively on ground or excited states: transition from short- to long-delay regimes. Huang H; Lin LC; Chen CY; Arsenijević D; Bimberg D; Lin FY; Grillot F Opt Express; 2018 Jan; 26(2):1743-1751. PubMed ID: 29402044 [TBL] [Abstract][Full Text] [Related]
7. Heat-sink free CW operation of injection microdisk lasers grown on Si substrate with emission wavelength beyond 1.3 μm. Kryzhanovskaya N; Moiseev E; Polubavkina Y; Maximov M; Kulagina M; Troshkov S; Zadiranov Y; Guseva Y; Lipovskii A; Tang M; Liao M; Wu J; Chen S; Liu H; Zhukov A Opt Lett; 2017 Sep; 42(17):3319-3322. PubMed ID: 28957093 [TBL] [Abstract][Full Text] [Related]
8. Distinctive signature of indium gallium nitride quantum dot lasing in microdisk cavities. Woolf A; Puchtler T; Aharonovich I; Zhu T; Niu N; Wang D; Oliver R; Hu EL Proc Natl Acad Sci U S A; 2014 Sep; 111(39):14042-6. PubMed ID: 25197073 [TBL] [Abstract][Full Text] [Related]
9. Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer. Tanabe K; Guimard D; Bordel D; Iwamoto S; Arakawa Y Opt Express; 2010 May; 18(10):10604-8. PubMed ID: 20588912 [TBL] [Abstract][Full Text] [Related]
10. InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods. Zhukov AE; Kryzhanovskaya NV; Moiseev EI; Dragunova AS; Tang M; Chen S; Liu H; Kulagina MM; Kadinskaya SA; Zubov FI; Mozharov AM; Maximov MV Materials (Basel); 2020 May; 13(10):. PubMed ID: 32443456 [TBL] [Abstract][Full Text] [Related]
11. Transient behaviors of current-injection quantum-dot microdisk lasers. Mao MH; Chien HC Opt Express; 2012 Jan; 20(3):3302-10. PubMed ID: 22330568 [TBL] [Abstract][Full Text] [Related]
12. Ground state lasing at 1.30 microm from InAs/GaAs quantum dot lasers grown by metal-organic chemical vapor deposition. Guimard D; Ishida M; Bordel D; Li L; Nishioka M; Tanaka Y; Ekawa M; Sudo H; Yamamoto T; Kondo H; Sugawara M; Arakawa Y Nanotechnology; 2010 Mar; 21(10):105604. PubMed ID: 20160334 [TBL] [Abstract][Full Text] [Related]
14. Ground-state lasing in high-power InAs/GaAs quantum dots-in-a-well laser using active multimode interference structure. Cheng Y; Wu J; Zhao L; Luo X; Wang QJ Opt Lett; 2015 Jan; 40(1):69-72. PubMed ID: 25531611 [TBL] [Abstract][Full Text] [Related]
15. 1.55 μm band low-threshold, continuous-wave lasing from InAs/InAlGaAs quantum dot microdisks. Zhu S; Shi B; Wan Y; Hu EL; Lau KM Opt Lett; 2017 Feb; 42(4):679-682. PubMed ID: 28198838 [TBL] [Abstract][Full Text] [Related]
17. Microscopic mechanism underlying double-state lasing in an InAs/GaAs quantum dot laser diode elucidated using coupled rate equations and the spontaneous emission recorded from a window structure. Lee JM; Jeon BH; Kim J; Lee D Opt Express; 2015 Dec; 23(25):31682-90. PubMed ID: 26698961 [TBL] [Abstract][Full Text] [Related]
18. Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate. Tanabe K; Nomura M; Guimard D; Iwamoto S; Arakawa Y Opt Express; 2009 Apr; 17(9):7036-42. PubMed ID: 19399078 [TBL] [Abstract][Full Text] [Related]
19. Lasing characteristics of InP-based InAs quantum dots depending on InGaAsP waveguide conditions. Jo B; Lee H; Choi I; Kim J; Kim JS; Han WS; Song JH; Oh DK; Noh SK; Leem JY J Nanosci Nanotechnol; 2014 Dec; 14(12):9623-7. PubMed ID: 25971109 [TBL] [Abstract][Full Text] [Related]
20. 1.3 μm InAs/GaAs quantum dot lasers on Si rib structures with current injection across direct-bonded GaAs/Si heterointerfaces. Tanabe K; Watanabe K; Arakawa Y Opt Express; 2012 Dec; 20(26):B315-21. PubMed ID: 23262867 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]