These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

128 related articles for article (PubMed ID: 37396057)

  • 1. Trade-off between Gradual Set and On/Off Ratio in HfO
    Athena FF; West MP; Hah J; Graham S; Vogel EM
    ACS Appl Electron Mater; 2023 Jun; 5(6):3048-3058. PubMed ID: 37396057
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Improvement of Resistive Switching Performance in Sulfur-Doped HfOx-Based RRAM.
    Zhang Z; Wang F; Hu K; She Y; Song S; Song Z; Zhang K
    Materials (Basel); 2021 Jun; 14(12):. PubMed ID: 34208616
    [TBL] [Abstract][Full Text] [Related]  

  • 3. The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfO
    Noh M; Ju D; Cho S; Kim S
    Nanomaterials (Basel); 2023 Oct; 13(21):. PubMed ID: 37947701
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Multilayer redox-based HfO
    Park S; Spetzler B; Ivanov T; Ziegler M
    Sci Rep; 2022 Oct; 12(1):18266. PubMed ID: 36309573
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfO
    Sahu DP; Park K; Chung PH; Han J; Yoon TS
    Sci Rep; 2023 Jun; 13(1):9592. PubMed ID: 37311855
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Improvement in Resistance Switching of SiC-Based Nonvolatile Memory by Solution-Deposited HfO
    Kim TW; Cho WJ
    J Nanosci Nanotechnol; 2019 Mar; 19(3):1248-1253. PubMed ID: 30469171
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Effect of Y-doping on switching mechanisms and impedance spectroscopy of HfO
    Bai J; Xie W; Qu D; Wei S; Li Y; Qin F; Ji M; Wang D
    Nanotechnology; 2023 Mar; 34(23):. PubMed ID: 36863007
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Three-Dimensional Reconstruction of Conductive Filaments in HfO
    Wei T; Lu Y; Zhang F; Tang J; Gao B; Yu P; Qian H; Wu H
    Adv Mater; 2023 Mar; 35(10):e2209925. PubMed ID: 36517930
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials.
    Prakash A; Maikap S; Banerjee W; Jana D; Lai CS
    Nanoscale Res Lett; 2013 Sep; 8(1):379. PubMed ID: 24011235
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Analytical modelling of the transport in analog filamentary conductive-metal-oxide/HfO
    Falcone DF; Menzel S; Stecconi T; Galetta M; La Porta A; Offrein BJ; Bragaglia V
    Nanoscale Horiz; 2024 Apr; 9(5):775-784. PubMed ID: 38517375
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory.
    Kim JM; Hwang SW
    Molecules; 2021 Nov; 26(22):. PubMed ID: 34833850
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Nanoscale 3D Stackable Ag-Doped HfO
    Park JH; Kim D; Kang DY; Jeon DS; Kim TG
    ACS Appl Mater Interfaces; 2019 Aug; 11(32):29408-29415. PubMed ID: 31328497
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Direct Observation of Structural Deformation Immunity for Understanding Oxygen Plasma Treatment-Enhanced Resistive Switching in HfO
    Wang D; Yan S; Chen Q; He Q; Xiao Y; Tang M; Zheng X
    Nanomaterials (Basel); 2019 Sep; 9(10):. PubMed ID: 31546659
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Electrochemical metallization switching with a platinum group metal in different oxides.
    Wang Z; Jiang H; Hyung Jang M; Lin P; Ribbe A; Xia Q; Yang JJ
    Nanoscale; 2016 Aug; 8(29):14023-30. PubMed ID: 27166623
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Enhanced Short-Term Memory Plasticity of WOx-Based Memristors by Inserting AlO
    Pyo J; Ha H; Kim S
    Materials (Basel); 2022 Dec; 15(24):. PubMed ID: 36556886
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Resistance Switching Behavior of a Perhydropolysilazane-Derived SiO
    Li P; Zhang Y; Guo Y; Jiang L; Zhang Z; Xu C
    J Phys Chem Lett; 2021 Nov; 12(44):10728-10734. PubMed ID: 34710322
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Seebeck-voltage-triggered self-biased photoelectrochemical water splitting using HfO
    Jung JY; Woong Kim D; Kim DH; Joo Park T; Wehrspohn RB; Lee JH
    Sci Rep; 2019 Jun; 9(1):9132. PubMed ID: 31235765
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Defect-Engineered Electroforming-Free Analog HfO
    Kim GS; Song H; Lee YK; Kim JH; Kim W; Park TH; Kim HJ; Min Kim K; Hwang CS
    ACS Appl Mater Interfaces; 2019 Dec; 11(50):47063-47072. PubMed ID: 31741373
    [TBL] [Abstract][Full Text] [Related]  

  • 19. HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture.
    Yu S; Chen HY; Gao B; Kang J; Wong HS
    ACS Nano; 2013 Mar; 7(3):2320-5. PubMed ID: 23411406
    [TBL] [Abstract][Full Text] [Related]  

  • 20. The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiO
    Park JH; Shin MH; Yi JS
    Nanomaterials (Basel); 2019 May; 9(5):. PubMed ID: 31121917
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.