149 related articles for article (PubMed ID: 37421017)
1. Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance.
Chen Q; Sun R; Miao R; Liu H; Yang L; Qi Z; He W; Li J
Micromachines (Basel); 2023 Mar; 14(4):. PubMed ID: 37421017
[TBL] [Abstract][Full Text] [Related]
2. Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T-Shaped Gate.
Li W; Liu H; Wang S; Chen S; Yang Z
Nanoscale Res Lett; 2017 Dec; 12(1):198. PubMed ID: 28314362
[TBL] [Abstract][Full Text] [Related]
3. Study of a Gate-Engineered Vertical TFET with GaSb/GaAs
Xie H; Chen Y; Liu H; Guo D
Materials (Basel); 2021 Mar; 14(6):. PubMed ID: 33804142
[TBL] [Abstract][Full Text] [Related]
4. A Novel L-Gate InGaAs/GaAsSb TFET with Improved Performance and Suppressed Ambipolar Effect.
Ma B; Chen S; Wang S; Han T; Zhang H; Yin C; Chen Y; Liu H
Micromachines (Basel); 2022 Sep; 13(9):. PubMed ID: 36144097
[TBL] [Abstract][Full Text] [Related]
5. Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor.
Chen S; Liu H; Wang S; Li W; Wang X; Zhao L
Nanoscale Res Lett; 2018 Oct; 13(1):321. PubMed ID: 30315380
[TBL] [Abstract][Full Text] [Related]
6. A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance.
Chen S; Wang S; Liu H; Han T; Xie H; Chong C
Nanoscale Res Lett; 2020 Oct; 15(1):202. PubMed ID: 33068207
[TBL] [Abstract][Full Text] [Related]
7. Investigation of SiGe/Si heterojunction inductive line tunneling TFET with source Schottky contact for prospect ultra-low power applications.
Lin JT; Yang RK
Nanotechnology; 2024 Jan; 35(16):. PubMed ID: 38211328
[TBL] [Abstract][Full Text] [Related]
8. Enhancing subthreshold slope and ON-current in a simple iTFET with overlapping gate on source-contact, drain Schottky contact, and intrinsic SiGe-pocket.
Lin JT; Lin KP; Cheng KM
Discov Nano; 2023 Sep; 18(1):121. PubMed ID: 37773549
[TBL] [Abstract][Full Text] [Related]
9. A high performance trench gate tunneling field effect transistor based on quasi-broken gap energy band alignment heterojunction.
Chen S; Wang S; Liu H; Han T; Zhang H
Nanotechnology; 2022 Mar; 33(22):. PubMed ID: 35180714
[TBL] [Abstract][Full Text] [Related]
10. A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement.
Lin JT; Weng SC
Discov Nano; 2023 Jul; 18(1):96. PubMed ID: 37505432
[TBL] [Abstract][Full Text] [Related]
11. Assessment of the Biosensing Capabilities of SiGe Heterojunction Negative Capacitance-Vertical Tunnel Field-Effect Transistor.
Singh S; Agnihotri SK; Bagga N; Samajdar DP
ACS Appl Bio Mater; 2024 Feb; 7(2):812-826. PubMed ID: 38230896
[TBL] [Abstract][Full Text] [Related]
12. Performance Investigation of GaSb/Si Heterojunction Based Gate Underlap and Overlap Vertical TFET Biosensor.
Theja A; Panchore M
IEEE Trans Nanobioscience; 2023 Apr; 22(2):284-291. PubMed ID: 35709121
[TBL] [Abstract][Full Text] [Related]
13. Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain.
Kim JH; Kim HW; Kim G; Kim S; Park BG
Micromachines (Basel); 2019 Jan; 10(1):. PubMed ID: 30621021
[TBL] [Abstract][Full Text] [Related]
14. Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.
Lu H; Lu B; Zhang Y; Zhang Y; Lv Z
Nanomaterials (Basel); 2019 Feb; 9(2):. PubMed ID: 30717154
[TBL] [Abstract][Full Text] [Related]
15. The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability.
Ferhati H; Djeffal F; Bentrcia T
Beilstein J Nanotechnol; 2018; 9():1856-1862. PubMed ID: 30013879
[TBL] [Abstract][Full Text] [Related]
16. Capacitorless One-Transistor Dynamic Random-Access Memory Based on Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor with Si/SiGe Heterojunction and Underlap Structure for Improvement of Sensing Margin and Retention Time.
Yoon YJ; Cho MS; Kim BG; Seo JH; Kang IM
J Nanosci Nanotechnol; 2019 Oct; 19(10):6023-6030. PubMed ID: 31026902
[TBL] [Abstract][Full Text] [Related]
17. Controlling Drain Side Tunneling Barrier Width in Electrically Doped PNPN Tunnel FET.
Shan C; Yang L; Liu Y; Liu ZM; Zheng H
Micromachines (Basel); 2023 Jan; 14(2):. PubMed ID: 36838002
[TBL] [Abstract][Full Text] [Related]
18. Improved Dielectrically Modulated Quad Gate Schottky Barrier MOSFET Biosensor.
Esakki P; Kumar P; Esakki M; Venkatesh A
Micromachines (Basel); 2023 Mar; 14(3):. PubMed ID: 36985092
[TBL] [Abstract][Full Text] [Related]
19. Vertical tunneling FET with Ge/Si doping-less heterojunction, a high-performance switch for digital applications.
Cherik IC; Mohammadi S; Maity SK
Sci Rep; 2023 Oct; 13(1):16757. PubMed ID: 37798400
[TBL] [Abstract][Full Text] [Related]
20. Electrical Characteristics of Ge/Si-Based Source Pocket Tunnel Field-Effect Transistors.
Ahn TJ; Yu YS
J Nanosci Nanotechnol; 2018 Sep; 18(9):5887-5892. PubMed ID: 29677711
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
