136 related articles for article (PubMed ID: 37426547)
1. Nanostars in Highly Si-Doped GaN.
Sawicka M; Turski H; Sobczak K; Feduniewicz-Żmuda A; Fiuczek N; Gołyga O; Siekacz M; Muziol G; Nowak G; Smalc-Koziorowska J; Skierbiszewski C
Cryst Growth Des; 2023 Jul; 23(7):5093-5101. PubMed ID: 37426547
[TBL] [Abstract][Full Text] [Related]
2. Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching.
Sawicka M; Fiuczek N; Turski H; Muziol G; Siekacz M; Nowakowski-Szkudlarek K; Feduniewicz-Żmuda A; Wolny P; Skierbiszewski C
Nanoscale; 2020 Mar; 12(10):6137-6143. PubMed ID: 32129781
[TBL] [Abstract][Full Text] [Related]
3. Si Donor Incorporation in GaN Nanowires.
Fang Z; Robin E; Rozas-Jiménez E; Cros A; Donatini F; Mollard N; Pernot J; Daudin B
Nano Lett; 2015 Oct; 15(10):6794-801. PubMed ID: 26426262
[TBL] [Abstract][Full Text] [Related]
4. Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy.
Feng ZC; Liu J; Xie D; Nafisa MT; Zhang C; Wan L; Jiang B; Lin HH; Qiu ZR; Lu W; Klein B; Ferguson IT; Liu S
Materials (Basel); 2024 Jun; 17(12):. PubMed ID: 38930290
[TBL] [Abstract][Full Text] [Related]
5. Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy.
Zhong A; Hane K
Nanoscale Res Lett; 2012 Dec; 7(1):686. PubMed ID: 23270331
[TBL] [Abstract][Full Text] [Related]
6. Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy.
Yu IS; Chang CP; Yang CP; Lin CT; Ma YR; Chen CC
Nanoscale Res Lett; 2014; 9(1):682. PubMed ID: 25593560
[TBL] [Abstract][Full Text] [Related]
7. Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si (111) wafer.
Luo XH; Wang RM; Zhang XP; Zhang HZ; Yu DP; Luo MC
Micron; 2004; 35(6):475-80. PubMed ID: 15120133
[TBL] [Abstract][Full Text] [Related]
8. Mg incorporation induced microstructural evolution of reactively sputtered GaN epitaxial films to Mg-doped GaN nanorods.
Monish M; Major SS
Nanotechnology; 2024 Mar; 35(22):. PubMed ID: 38373390
[TBL] [Abstract][Full Text] [Related]
9. High Quality Growth of Cobalt Doped GaN Nanowires with Enhanced Ferromagnetic and Optical Response.
Maraj M; Nabi G; Usman K; Wang E; Wei W; Wang Y; Sun W
Materials (Basel); 2020 Aug; 13(16):. PubMed ID: 32796564
[TBL] [Abstract][Full Text] [Related]
10. Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH3 interrupted etching.
Son JS; Honda Y; Amano H
Opt Express; 2014 Feb; 22(3):3585-92. PubMed ID: 24663649
[TBL] [Abstract][Full Text] [Related]
11. The role of Si in GaN/AlN/Si(111) plasma assisted molecular beam epitaxy: polarity and inversion.
Roshko A; Brubaker M; Blanchard P; Harvey T; Bertness K
Jpn J Appl Phys (2008); 2019 Jun; 58(SC):. PubMed ID: 31276121
[TBL] [Abstract][Full Text] [Related]
12. Role of Metallic Adlayer in Limiting Ge Incorporation into GaN.
Turski H; Wolny P; Chlipala M; Sawicka M; Reszka A; Kempisty P; Konczewicz L; Muziol G; Siekacz M; Skierbiszewski C
Materials (Basel); 2022 Aug; 15(17):. PubMed ID: 36079311
[TBL] [Abstract][Full Text] [Related]
13. Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy.
Bolshakov AD; Mozharov AM; Sapunov GA; Shtrom IV; Sibirev NV; Fedorov VV; Ubyivovk EV; Tchernycheva M; Cirlin GE; Mukhin IS
Beilstein J Nanotechnol; 2018; 9():146-154. PubMed ID: 29441260
[TBL] [Abstract][Full Text] [Related]
14. Differences in the nanoscale electrical properties of GaN films grown on sapphire and ZnO substrates by molecular beam epitaxy.
Chen SH; Su CW; Chang LH; Tsai TH
Microsc Res Tech; 2017 Jul; 80(7):731-736. PubMed ID: 28248446
[TBL] [Abstract][Full Text] [Related]
15. Facile Au-assisted epitaxy of nearly strain-free GaN films on sapphire substrates.
Li P; Xiong T; Wang L; Sun S; Chen C
RSC Adv; 2020 Jan; 10(4):2096-2103. PubMed ID: 35494563
[TBL] [Abstract][Full Text] [Related]
16. Novel type of whisker-tip cantilever based on GaN microrods for atomic force microscopy.
Gacka E; Kunicki P; Łysik P; Gajewski K; Ciechanowicz P; Pucicki D; Majchrzak D; Gotszalk T; Piasecki T; Busani T; Rangelow IW; Hommel D
Ultramicroscopy; 2023 Jun; 248():113713. PubMed ID: 36933435
[TBL] [Abstract][Full Text] [Related]
17. Self-Induced Growth of GaN Nanowall Structure on Si (111) by Laser Molecular Beam Epitaxy.
Tyagi P; Ramesh C; Kushvaha SS; Gupta G; Senthil Kumar M
J Nanosci Nanotechnol; 2020 Jun; 20(6):3919-3924. PubMed ID: 31748096
[TBL] [Abstract][Full Text] [Related]
18. Growth of zinc-blende GaN on muscovite mica by molecular beam epitaxy.
Daudin B; Donatini F; Bougerol C; Gayral B; Bellet-Amalric E; Vermeersch R; Feldberg N; Rouvière JL; Recio Carretero MJ; Garro N; Garcia-Orrit S; Cros A
Nanotechnology; 2021 Jan; 32(2):025601. PubMed ID: 32906087
[TBL] [Abstract][Full Text] [Related]
19. Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates.
Roshko A; Brubaker M; Blanchard P; Harvey T; Bertness KA
Crystals (Basel); 2018; 8(9):. PubMed ID: 33101720
[TBL] [Abstract][Full Text] [Related]
20. Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire.
Tsykaniuk BI; Nikolenko AS; Strelchuk VV; Naseka VM; Mazur YI; Ware ME; DeCuir EA; Sadovyi B; Weyher JL; Jakiela R; Salamo GJ; Belyaev AE
Nanoscale Res Lett; 2017 Dec; 12(1):397. PubMed ID: 28599511
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
