177 related articles for article (PubMed ID: 37512704)
1. Argon and Oxygen Gas Flow Rate Dependency of Sputtering-Based Indium-Gallium-Zinc Oxide Thin-Film Transistors.
Han Y; Lee DH; Cho ES; Kwon SJ; Yoo H
Micromachines (Basel); 2023 Jul; 14(7):. PubMed ID: 37512704
[TBL] [Abstract][Full Text] [Related]
2. Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors.
Li ZY; Song SM; Wang WX; Gong JH; Tong Y; Dai MJ; Lin SS; Yang TL; Sun H
Nanotechnology; 2022 Oct; 34(2):. PubMed ID: 36219884
[TBL] [Abstract][Full Text] [Related]
3. Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar-O
Liu WS; Hsu CH; Jiang Y; Lai YC; Kuo HC
Membranes (Basel); 2021 Dec; 12(1):. PubMed ID: 35054574
[TBL] [Abstract][Full Text] [Related]
4. The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor.
Park S; Bang S; Lee S; Park J; Ko Y; Jeon H
J Nanosci Nanotechnol; 2011 Jul; 11(7):6029-33. PubMed ID: 22121652
[TBL] [Abstract][Full Text] [Related]
5. Photo-induced Reactive Oxygen Species Activation for Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors Using Sodium Hypochlorite.
Kim WG; Tak YJ; Yoo H; Kim HT; Park JW; Choi DH; Kim HJ
ACS Appl Mater Interfaces; 2021 Sep; 13(37):44531-44540. PubMed ID: 34505504
[TBL] [Abstract][Full Text] [Related]
6. Influence of Oxygen Flow Rate on Channel Width Dependent Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors.
Wu G; Sahoo AK
Nanomaterials (Basel); 2020 Nov; 10(12):. PubMed ID: 33260908
[TBL] [Abstract][Full Text] [Related]
7. Vertically Graded Oxygen Deficiency for Improving Electrical Characteristics and Stability of Indium Gallium Zinc Oxide Thin-Film Transistors.
Yoon CS; Kim HT; Kim MS; Yoo H; Park JW; Choi DH; Kim D; Kim HJ
ACS Appl Mater Interfaces; 2021 Jan; 13(3):4110-4116. PubMed ID: 33448781
[TBL] [Abstract][Full Text] [Related]
8. Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance.
Hu S; Lu K; Ning H; Yao R; Gong Y; Pan Z; Guo C; Wang J; Pang C; Gong Z; Peng J
Nanomaterials (Basel); 2021 Feb; 11(2):. PubMed ID: 33670767
[TBL] [Abstract][Full Text] [Related]
9. Intense Pulsed Light Annealing Process of Indium-Gallium-Zinc-Oxide Semiconductors via Flash White Light Combined with Deep-UV and Near-Infrared Drying for High-Performance Thin-Film Transistors.
Moon CJ; Kim HS
ACS Appl Mater Interfaces; 2019 Apr; 11(14):13380-13388. PubMed ID: 30882197
[TBL] [Abstract][Full Text] [Related]
10. Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors.
Heo JS; Jo JW; Kang J; Jeong CY; Jeong HY; Kim SK; Kim K; Kwon HI; Kim J; Kim YH; Kim MG; Park SK
ACS Appl Mater Interfaces; 2016 Apr; 8(16):10403-12. PubMed ID: 27035796
[TBL] [Abstract][Full Text] [Related]
11. Plasma Polymerization Enabled Polymer/Metal-Oxide Hybrid Semiconductors for Wearable Electronics.
Na JW; Kim HJ; Hong S; Kim HJ
ACS Appl Mater Interfaces; 2018 Oct; 10(43):37207-37215. PubMed ID: 30338976
[TBL] [Abstract][Full Text] [Related]
12. Effect of the annealing ambient on the electrical characteristics of the amorphous InGaZnO thin film transistors.
Huang YC; Yang PY; Huang HY; Wang SJ; Cheng HC
J Nanosci Nanotechnol; 2012 Jul; 12(7):5625-30. PubMed ID: 22966622
[TBL] [Abstract][Full Text] [Related]
13. Multifunctional Oxygen Scavenger Layer for High-Performance Oxide Thin-Film Transistors with Low-Temperature Processing.
Kim MS; Kim HT; Yoo H; Choi DH; Park JW; Kim TS; Lim JH; Kim HJ
ACS Appl Mater Interfaces; 2021 Jul; 13(27):31816-31824. PubMed ID: 34180652
[TBL] [Abstract][Full Text] [Related]
14. Oxygen Partial Pressure Impact on Characteristics of Indium Titanium Zinc Oxide Thin Film Transistor Fabricated via RF Sputtering.
Hsu MH; Chang SP; Chang SJ; Wu WT; Li JY
Nanomaterials (Basel); 2017 Jun; 7(7):. PubMed ID: 28672868
[TBL] [Abstract][Full Text] [Related]
15. Improvement of Electrical Characteristics and Stability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using Nitrocellulose Passivation Layer.
Shin KY; Tak YJ; Kim WG; Hong S; Kim HJ
ACS Appl Mater Interfaces; 2017 Apr; 9(15):13278-13285. PubMed ID: 28299924
[TBL] [Abstract][Full Text] [Related]
16. Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors.
Chen FH; Her JL; Shao YH; Matsuda YH; Pan TM
Nanoscale Res Lett; 2013 Jan; 8(1):18. PubMed ID: 23294730
[TBL] [Abstract][Full Text] [Related]
17. Low-temperature fabrication of an HfO
Hong S; Park SP; Kim YG; Kang BH; Na JW; Kim HJ
Sci Rep; 2017 Nov; 7(1):16265. PubMed ID: 29176568
[TBL] [Abstract][Full Text] [Related]
18. Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition.
Yoon SM; Seong NJ; Choi K; Seo GH; Shin WC
ACS Appl Mater Interfaces; 2017 Jul; 9(27):22676-22684. PubMed ID: 28653825
[TBL] [Abstract][Full Text] [Related]
19. Simple method to enhance positive bias stress stability of In-Ga-Zn-O thin-film transistors using a vertically graded oxygen-vacancy active layer.
Park JH; Kim YG; Yoon S; Hong S; Kim HJ
ACS Appl Mater Interfaces; 2014 Dec; 6(23):21363-8. PubMed ID: 25402628
[TBL] [Abstract][Full Text] [Related]
20. Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs.
Hu S; Fang Z; Ning H; Tao R; Liu X; Zeng Y; Yao R; Huang F; Li Z; Xu M; Wang L; Lan L; Peng J
Materials (Basel); 2016 Jul; 9(8):. PubMed ID: 28773743
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]