These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
122 related articles for article (PubMed ID: 37513115)
21. Revealing Antiferroelectric Switching and Ferroelectric Wakeup in Hafnia by Advanced Piezoresponse Force Microscopy. Collins L; Celano U ACS Appl Mater Interfaces; 2020 Sep; 12(37):41659-41665. PubMed ID: 32870659 [TBL] [Abstract][Full Text] [Related]
22. Ferroelectricity and antiferroelectricity of doped thin HfO2-based films. Park MH; Lee YH; Kim HJ; Kim YJ; Moon T; Kim KD; Müller J; Kersch A; Schroeder U; Mikolajick T; Hwang CS Adv Mater; 2015 Mar; 27(11):1811-31. PubMed ID: 25677113 [TBL] [Abstract][Full Text] [Related]
23. Origin of Ferroelectricity in Epitaxial Si-Doped HfO Li T; Ye M; Sun Z; Zhang N; Zhang W; Inguva S; Xie C; Chen L; Wang Y; Ke S; Huang H ACS Appl Mater Interfaces; 2019 Jan; 11(4):4139-4144. PubMed ID: 30618238 [TBL] [Abstract][Full Text] [Related]
24. Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition. Huang F; Chen X; Liang X; Qin J; Zhang Y; Huang T; Wang Z; Peng B; Zhou P; Lu H; Zhang L; Deng L; Liu M; Liu Q; Tian H; Bi L Phys Chem Chem Phys; 2017 Feb; 19(5):3486-3497. PubMed ID: 27924320 [TBL] [Abstract][Full Text] [Related]
25. Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr:HfO Choi Y; Han C; Shin J; Moon S; Min J; Park H; Eom D; Lee J; Shin C Sensors (Basel); 2022 May; 22(11):. PubMed ID: 35684705 [TBL] [Abstract][Full Text] [Related]
26. Facile Ferroelectric Phase Transition Driven by Si Doping in HfO Yang H; Park K; Lee HJ; Jo J; Park H; Park N; Park J; Lee JH Inorg Chem; 2020 May; 59(9):5993-5999. PubMed ID: 32315167 [TBL] [Abstract][Full Text] [Related]
27. Structural and Electrical Comparison of Si and Zr Doped Hafnium Oxide Thin Films and Integrated FeFETs Utilizing Transmission Kikuchi Diffraction. Lederer M; Kämpfe T; Vogel N; Utess D; Volkmann B; Ali T; Olivo R; Müller J; Beyer S; Trentzsch M; Seidel K; Eng ALM Nanomaterials (Basel); 2020 Feb; 10(2):. PubMed ID: 32098415 [TBL] [Abstract][Full Text] [Related]
28. Experimental study of endurance characteristics of Al-doped HfO Choi Y; Shin J; Moon S; Min J; Han C; Shin C Nanotechnology; 2023 Feb; 34(18):. PubMed ID: 36724507 [TBL] [Abstract][Full Text] [Related]
29. Intrinsic ferroelectricity in Y-doped HfO Yun Y; Buragohain P; Li M; Ahmadi Z; Zhang Y; Li X; Wang H; Li J; Lu P; Tao L; Wang H; Shield JE; Tsymbal EY; Gruverman A; Xu X Nat Mater; 2022 Aug; 21(8):903-909. PubMed ID: 35761058 [TBL] [Abstract][Full Text] [Related]
30. Enhanced Second Harmonic Generation from Ferroelectric HfO Qin J; Huang F; Li X; Deng L; Kang T; Markov A; Yue F; Chen Y; Wen X; Liu S; Xiong Q; Semin S; Rasing T; Modotto D; Morandotti R; Xu J; Duan H; Bi L ACS Nano; 2019 Feb; 13(2):1213-1222. PubMed ID: 30629429 [TBL] [Abstract][Full Text] [Related]
31. Reliable resistive switching of epitaxial single crystalline cubic Y-HfO Wang Y; Niu G; Wang Q; Roy S; Dai L; Wu H; Sun Y; Song S; Song Z; Xie YH; Ye ZG; Meng X; Ren W Nanotechnology; 2020 May; 31(20):205203. PubMed ID: 32018237 [TBL] [Abstract][Full Text] [Related]
32. A perspective on the physical scaling down of hafnia-based ferroelectrics. Park JY; Lee DH; Park GH; Lee J; Lee Y; Park MH Nanotechnology; 2023 Feb; 34(20):. PubMed ID: 36745914 [TBL] [Abstract][Full Text] [Related]
33. Effects of etching process and annealing temperature on the ferroelectric properties of atomic layer deposited Al-doped HfO Ku B; Ma Y; Han H; Xuan W; Choi C Nanotechnology; 2022 Jul; 33(42):. PubMed ID: 35767964 [TBL] [Abstract][Full Text] [Related]
34. A Gd-doped HfO Shen Y; Zhang Z; Zhang Q; Wei F; Yin H; Wei Q; Men K RSC Adv; 2020 Feb; 10(13):7812-7816. PubMed ID: 35492147 [TBL] [Abstract][Full Text] [Related]
35. Improved Ferroelectric Properties in Hf Zhao B; Yan Y; Bi J; Xu G; Xu Y; Yang X; Fan L; Liu M Nanomaterials (Basel); 2022 Aug; 12(17):. PubMed ID: 36080036 [TBL] [Abstract][Full Text] [Related]
36. Fluid Imprint and Inertial Switching in Ferroelectric La:HfO Buragohain P; Erickson A; Kariuki P; Mittmann T; Richter C; Lomenzo PD; Lu H; Schenk T; Mikolajick T; Schroeder U; Gruverman A ACS Appl Mater Interfaces; 2019 Sep; 11(38):35115-35121. PubMed ID: 31460741 [TBL] [Abstract][Full Text] [Related]
38. An Investigation of SILC Degradation under Constant Voltage Stress in PDSOI Devices. Lu Y; Liu H Micromachines (Basel); 2023 May; 14(5):. PubMed ID: 37241707 [TBL] [Abstract][Full Text] [Related]
39. Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications. Kundu S; Maurya D; Clavel M; Zhou Y; Halder NN; Hudait MK; Banerji P; Priya S Sci Rep; 2015 Feb; 5():8494. PubMed ID: 25683062 [TBL] [Abstract][Full Text] [Related]
40. Impact of annealing temperature on the remanent polarization and tunneling electro-resistance of ferroelectric Al-doped HfO Kim J; Kwon O; Lim E; Kim D; Kim S Phys Chem Chem Phys; 2023 Feb; 25(6):4588-4597. PubMed ID: 36723041 [TBL] [Abstract][Full Text] [Related] [Previous] [Next] [New Search]