These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

138 related articles for article (PubMed ID: 37513134)

  • 1. Semiempirical Two-Dimensional Model of the Bipolar Resistive Switching Process in Si-NCs/SiO
    Ramirez-Rios J; González-Flores KE; Avilés-Bravo JJ; Pérez-García SA; Flores-Méndez J; Moreno-Moreno M; Morales-Sánchez A
    Nanomaterials (Basel); 2023 Jul; 13(14):. PubMed ID: 37513134
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Digital and Analog Resistive Switching Behavior in Si-NCs Embedded in a Si/SiO
    Morales-Sánchez A; González-Flores KE; Pérez-García SA; González-Torres S; Garrido-Fernández B; Hernández-Martínez L; Moreno-Moreno M
    Nanomaterials (Basel); 2023 Mar; 13(6):. PubMed ID: 36985880
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Resistive switching control for conductive Si-nanocrystals embedded in Si/SiO
    González-Flores KE; Palacios-Márquez B; Álvarez-Quintana J; Pérez-García SA; Licea-Jiménez L; Horley P; Morales-Sánchez A
    Nanotechnology; 2018 Sep; 29(39):395203. PubMed ID: 29988025
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPt
    Wang LG; Cao ZY; Qian X; Zhu L; Cui DP; Li AD; Wu D
    ACS Appl Mater Interfaces; 2017 Feb; 9(7):6634-6643. PubMed ID: 28139921
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Three-Dimensional Reconstruction of Conductive Filaments in HfO
    Wei T; Lu Y; Zhang F; Tang J; Gao B; Yu P; Qian H; Wu H
    Adv Mater; 2023 Mar; 35(10):e2209925. PubMed ID: 36517930
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Tuning resistive switching characteristics of tantalum oxide memristors through Si doping.
    Kim S; Choi S; Lee J; Lu WD
    ACS Nano; 2014 Oct; 8(10):10262-9. PubMed ID: 25255038
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Oxygen vacancy engineering of TaO
    Palhares JHQ; Beilliard Y; Alibart F; Bonturim E; de Florio DZ; Fonseca FC; Drouin D; Ferlauto AS
    Nanotechnology; 2021 Jul; 32(40):. PubMed ID: 34167106
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO
    Choi J; Kim S
    Micromachines (Basel); 2020 Sep; 11(10):. PubMed ID: 33003640
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode.
    Sun T; Li D; Chen J; Wang Y; Han J; Zhu T; Li W; Xu J; Chen K
    Nanomaterials (Basel); 2023 Mar; 13(6):. PubMed ID: 36986003
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Resistive switching modulation by incorporating thermally enhanced layer in HfO
    Li X; Feng Z; Zou J; Wu Z; Xu Z; Yang F; Zhu Y; Dai Y
    Nanotechnology; 2023 Nov; 35(3):. PubMed ID: 37852218
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Improved Endurance and Resistive Switching Stability in Ceria Thin Films Due to Charge Transfer Ability of Al Dopant.
    Ismail M; Ahmed E; Rana AM; Hussain F; Talib I; Nadeem MY; Panda D; Shah NA
    ACS Appl Mater Interfaces; 2016 Mar; 8(9):6127-36. PubMed ID: 26881895
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Improved bipolar resistive switching memory characteristics in Ge0.5Se0.5 solid electrolyte by using dispersed silver nanocrystals on bottom electrode.
    Kim JH; Nam KH; Hwang I; Cho WJ; Park B; Chung HB
    J Nanosci Nanotechnol; 2014 Dec; 14(12):9498-503. PubMed ID: 25971090
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Excellent Bipolar Resistive Switching Characteristics of Bi
    Zhou HC; Jiang YP; Tang XG; Liu QX; Li WH; Tang ZH
    Nanomaterials (Basel); 2021 Oct; 11(10):. PubMed ID: 34685146
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Analog and Digital Bipolar Resistive Switching in Solution-Combustion-Processed NiO Memristor.
    Li Y; Chu J; Duan W; Cai G; Fan X; Wang X; Wang G; Pei Y
    ACS Appl Mater Interfaces; 2018 Jul; 10(29):24598-24606. PubMed ID: 29995376
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Resistive switches and memories from silicon oxide.
    Yao J; Sun Z; Zhong L; Natelson D; Tour JM
    Nano Lett; 2010 Oct; 10(10):4105-10. PubMed ID: 20806916
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Resistive switching memory performance in oxide hetero-nanocrystals with well-controlled interfaces.
    Ishibe T; Maeda Y; Terada T; Naruse N; Mera Y; Kobayashi E; Nakamura Y
    Sci Technol Adv Mater; 2020; 21(1):195-204. PubMed ID: 32284769
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Insights into Multilevel Resistive Switching in Monolayer MoS
    Bhattacharjee S; Caruso E; McEvoy N; Ó Coileáin C; O'Neill K; Ansari L; Duesberg GS; Nagle R; Cherkaoui K; Gity F; Hurley PK
    ACS Appl Mater Interfaces; 2020 Feb; 12(5):6022-6029. PubMed ID: 31920069
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Atomistic Insights on the Full Operation Cycle of a HfO
    Urquiza ML; Islam MM; van Duin ACT; Cartoixà X; Strachan A
    ACS Nano; 2021 Aug; 15(8):12945-12954. PubMed ID: 34329560
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application.
    Gao S; Zeng F; Li F; Wang M; Mao H; Wang G; Song C; Pan F
    Nanoscale; 2015 Apr; 7(14):6031-8. PubMed ID: 25765948
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Multi-Nonvolatile State Resistive Switching Arising from Ferroelectricity and Oxygen Vacancy Migration.
    Lü W; Li C; Zheng L; Xiao J; Lin W; Li Q; Wang XR; Huang Z; Zeng S; Han K; Zhou W; Zeng K; Chen J; Ariando ; Cao W; Venkatesan T
    Adv Mater; 2017 Jun; 29(24):. PubMed ID: 28439926
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.