246 related articles for article (PubMed ID: 37570498)
1. Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO
Chen KH; Cheng CM; Wang NF; Kao MC
Nanomaterials (Basel); 2023 Jul; 13(15):. PubMed ID: 37570498
[TBL] [Abstract][Full Text] [Related]
2. Bipolar Switching Properties of the Transparent Indium Tin Oxide Thin Film Resistance Random Access Memories.
Chen KH; Cheng CM; Chen ML; Pan YY
Nanomaterials (Basel); 2023 Feb; 13(4):. PubMed ID: 36839057
[TBL] [Abstract][Full Text] [Related]
3. Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode.
Chen KH; Chang KC; Chang TC; Tsai TM; Liang SP; Young TF; Syu YE; Sze SM
Nanoscale Res Lett; 2016 Dec; 11(1):224. PubMed ID: 27117634
[TBL] [Abstract][Full Text] [Related]
4. Bipolar Resistive Switching Characteristics of HfO
Zhang W; Kong JZ; Cao ZY; Li AD; Wang LG; Zhu L; Li X; Cao YQ; Wu D
Nanoscale Res Lett; 2017 Dec; 12(1):393. PubMed ID: 28599512
[TBL] [Abstract][Full Text] [Related]
5. Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment.
Chen KH; Chang KC; Chang TC; Tsai TM; Liang SP; Young TF; Syu YE; Sze SM
Nanoscale Res Lett; 2016 Dec; 11(1):52. PubMed ID: 26831690
[TBL] [Abstract][Full Text] [Related]
6. Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments.
Chen KH; Tsai TM; Cheng CM; Huang SJ; Chang KC; Liang SP; Young TF
Materials (Basel); 2017 Dec; 11(1):. PubMed ID: 29283368
[TBL] [Abstract][Full Text] [Related]
7. Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method.
Chen KH; Kao MC; Huang SJ; Li JZ
Materials (Basel); 2017 Dec; 10(12):. PubMed ID: 29231867
[TBL] [Abstract][Full Text] [Related]
8. Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPt
Wang LG; Cao ZY; Qian X; Zhu L; Cui DP; Li AD; Wu D
ACS Appl Mater Interfaces; 2017 Feb; 9(7):6634-6643. PubMed ID: 28139921
[TBL] [Abstract][Full Text] [Related]
9. Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering.
Zhao X; Li Y; Ai C; Wen D
Materials (Basel); 2019 Apr; 12(8):. PubMed ID: 31003535
[TBL] [Abstract][Full Text] [Related]
10. Effects of a Nb nanopin electrode on the resistive random-access memory switching characteristics of NiO thin films.
Ahn Y; Shin HW; Lee TH; Kim WH; Son JY
Nanoscale; 2018 Jul; 10(28):13443-13448. PubMed ID: 29972166
[TBL] [Abstract][Full Text] [Related]
11. Analysis of the Bipolar Resistive Switching Behavior of a Biocompatible Glucose Film for Resistive Random Access Memory.
Park SP; Tak YJ; Kim HJ; Lee JH; Yoo H; Kim HJ
Adv Mater; 2018 Jun; 30(26):e1800722. PubMed ID: 29761552
[TBL] [Abstract][Full Text] [Related]
12. Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory.
Zhao X; Song P; Gai H; Li Y; Ai C; Wen D
Micromachines (Basel); 2020 Sep; 11(10):. PubMed ID: 32987957
[TBL] [Abstract][Full Text] [Related]
13. Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory.
Lee KJ; Wang LW; Chiang TK; Wang YH
Materials (Basel); 2015 Oct; 8(10):7191-7198. PubMed ID: 28793630
[TBL] [Abstract][Full Text] [Related]
14. Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer.
Chang KC; Huang JW; Chang TC; Tsai TM; Chen KH; Young TF; Chen JH; Zhang R; Lou JC; Huang SY; Pan YC; Huang HC; Syu YE; Gan DS; Bao DH; Sze SM
Nanoscale Res Lett; 2013 Dec; 8(1):523. PubMed ID: 24330524
[TBL] [Abstract][Full Text] [Related]
15. Impact of Top Electrodes on the Nonvolatile Resistive Switching Properties of Citrus Thin Films.
Lin KW; Wang TY; Chang YC
Polymers (Basel); 2021 Feb; 13(5):. PubMed ID: 33652819
[TBL] [Abstract][Full Text] [Related]
16. First Order Rate Law Analysis for Reset State in Vanadium Oxide Thin Film Resistive Random Access Memory Devices.
Chen KH; Cheng CM; Wang NF; Hung HW; Li CY; Wu S
Nanomaterials (Basel); 2023 Jan; 13(1):. PubMed ID: 36616108
[TBL] [Abstract][Full Text] [Related]
17. Enhanced Unipolar Resistive Switching Characteristics of Hf
Wu Z; Zhu J
Materials (Basel); 2017 Mar; 10(3):. PubMed ID: 28772685
[TBL] [Abstract][Full Text] [Related]
18. Improvement of Resistive Switching Performance in Sulfur-Doped HfOx-Based RRAM.
Zhang Z; Wang F; Hu K; She Y; Song S; Song Z; Zhang K
Materials (Basel); 2021 Jun; 14(12):. PubMed ID: 34208616
[TBL] [Abstract][Full Text] [Related]
19. Low-power multilevel resistive switching in
Velpula RT; Jain B; Nguyen HPT
Nanotechnology; 2022 Dec; 34(7):. PubMed ID: 36399780
[TBL] [Abstract][Full Text] [Related]
20. Low-Power Resistive Switching Characteristic in HfO
Ding X; Feng Y; Huang P; Liu L; Kang J
Nanoscale Res Lett; 2019 May; 14(1):157. PubMed ID: 31073774
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
