111 related articles for article (PubMed ID: 37579759)
1. Exploration on structural stability, electronic and optical properties of Cs-activated and Cs/O-activated Al
Tian J; Liu L; Lu F; Zhangyang X
J Phys Condens Matter; 2023 Aug; 35(47):. PubMed ID: 37579759
[TBL] [Abstract][Full Text] [Related]
2. Alloying Reversed Anisotropy of Thermal Transport in Bulk Al
Chen A; Wei D; Xu J; Li A; Wang H; Qin Z; Qin G
J Phys Chem Lett; 2023 Nov; 14(43):9746-9757. PubMed ID: 37882443
[TBL] [Abstract][Full Text] [Related]
3. Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers.
He C; Qin Z; Xu F; Hou M; Zhang S; Zhang L; Wang X; Ge W; Shen B
Sci Rep; 2015 Aug; 5():13046. PubMed ID: 26267249
[TBL] [Abstract][Full Text] [Related]
4. Comparison of activation behavior of Cs-O and Cs-NF
Li S; Zhang Y; Zhang K; Zhang J; Zhan J; Shi F; Jiao G; Cheng H; Feng C
J Colloid Interface Sci; 2022 May; 613():117-125. PubMed ID: 35032772
[TBL] [Abstract][Full Text] [Related]
5. Optimizing metal/n-AlGaN contact by recessed AlGaN heterostructure with a polarization effect.
Chen Y; Jiang K; Sun X; Zhang ZH; Zhang S; Ben J; Wang B; Guo L; Li D
Nanoscale Adv; 2023 May; 5(9):2530-2536. PubMed ID: 37143800
[TBL] [Abstract][Full Text] [Related]
6. Growth of uniformly aligned ZnO nanowire heterojunction arrays on GaN, AlN, and Al0.5Ga0.5N substrates.
Wang X; Song J; Li P; Ryou JH; Dupuis RD; Summers CJ; Wang ZL
J Am Chem Soc; 2005 Jun; 127(21):7920-3. PubMed ID: 15913382
[TBL] [Abstract][Full Text] [Related]
7. Computational study of positron annihilation parameters for cation mono-vacancies and vacancy complexes in nitride semiconductor alloys.
Ishibashi S; Uedono A; Kino H; Miyake T; Terakura K
J Phys Condens Matter; 2019 Nov; 31(47):475401. PubMed ID: 31429422
[TBL] [Abstract][Full Text] [Related]
8. Influence of Al fraction on photoemission performance of AlGaN photocathode.
Hao G; Chang B; Shi F; Zhang J; Zhang Y; Chen X; Jin M
Appl Opt; 2014 Jun; 53(17):3637-41. PubMed ID: 24921126
[TBL] [Abstract][Full Text] [Related]
9. Impact of gas adsorption on the stability and electronic properties of negative electron affinity GaAs nanowire photocathodes.
Liu L; Diao Y; Xia S
J Colloid Interface Sci; 2020 Jul; 572():297-305. PubMed ID: 32251908
[TBL] [Abstract][Full Text] [Related]
10. Enhanced output power of GaN-based LEDs with embedded AlGaN pyramidal shells.
Tu SJ; Sheu JK; Lee ML; Yang CC; Chang KH; Yeh YH; Huang FW; Lai WC
Opt Express; 2011 Jun; 19(13):12719-26. PubMed ID: 21716514
[TBL] [Abstract][Full Text] [Related]
11. Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition.
Giannazzo F; Dagher R; Schilirò E; Panasci SE; Greco G; Nicotra G; Roccaforte F; Agnello S; Brault J; Cordier Y; Michon A
Nanotechnology; 2021 Jan; 32(1):015705. PubMed ID: 33043906
[TBL] [Abstract][Full Text] [Related]
12. Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer.
Liu Y; Liang B; Guo Q; Wang S; Fu G; Fu N; Wang ZM; Mazur YI; Salamo GJ
Nanoscale Res Lett; 2015 Dec; 10(1):973. PubMed ID: 26123271
[TBL] [Abstract][Full Text] [Related]
13. Strain- and surface-induced modification of photoluminescence from self-assembled GaN/Al0.5Ga0.5N quantum dots: strong effect of capping layer and atmospheric condition.
Kim JH; Elmaghraoui D; Leroux M; Korytov M; Vennéguès P; Jaziri S; Brault J; Cho YH
Nanotechnology; 2014 Aug; 25(30):305703. PubMed ID: 25008561
[TBL] [Abstract][Full Text] [Related]
14. High-Quality Crystal Growth and Characteristics of AlGaN-Based Solar-Blind Distributed Bragg Reflectors with a Tri-layer Period Structure.
Chang J; Chen D; Yang L; Liu Y; Dong K; Lu H; Zhang R; Zheng Y
Sci Rep; 2016 Jul; 6():29571. PubMed ID: 27381651
[TBL] [Abstract][Full Text] [Related]
15. Photoemission performance of thin graded structure AlGaN photocathode.
Hao G; Shi F; Cheng H; Ren B; Chang B
Appl Opt; 2015 Apr; 54(10):2572-6. PubMed ID: 25967161
[TBL] [Abstract][Full Text] [Related]
16. Attenuation performance of reflection-mode AlGaN photocathode under different preparation methods.
Hao G; Yang M; Chang B; Chen X; Zhang J; Fu X
Appl Opt; 2013 Aug; 52(23):5671-5. PubMed ID: 23938417
[TBL] [Abstract][Full Text] [Related]
17. Adsorption mechanism of Pt, Ag, Al, Au on GaAs nanowire surfaces from first-principles.
Diao Y; Liu L; Xia S
J Phys Condens Matter; 2020 Feb; 32(8):085001. PubMed ID: 31703219
[TBL] [Abstract][Full Text] [Related]
18. Effect of lateral diffusion of photoelectrons in the reflection-mode varied-doping AlGaN photocathode on resolution.
Wang H; Zhang J; Hou D; Hao J; Wang L; Sai Y
Appl Opt; 2021 Sep; 60(25):7658-7663. PubMed ID: 34613235
[TBL] [Abstract][Full Text] [Related]
19. Theoretical Study on the Photoemission Performance of a Transmission Mode In
Wang H; Linghu J; Zou P; Wang X; Shen H; Hai B
Molecules; 2023 Jul; 28(13):. PubMed ID: 37446922
[TBL] [Abstract][Full Text] [Related]
20. Spectral response characteristics of the transmission-mode aluminum gallium nitride photocathode with varying aluminum composition.
Hao G; Liu J; Ke S
Appl Opt; 2017 Dec; 56(35):9757-9761. PubMed ID: 29240122
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]