These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

120 related articles for article (PubMed ID: 37605886)

  • 1. Interface roughness effects and relaxation dynamics of an amorphous semiconductor oxide-based analog resistance switching memory.
    Haripriya GR; Noh HY; Lee CK; Kim JS; Lee MJ; Lee HJ
    Nanoscale; 2023 Sep; 15(35):14476-14487. PubMed ID: 37605886
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Stable and reliable IGZO resistive switching device with HfAlO
    Peng H; Liu H; Ma X; Cheng X
    Nanotechnology; 2023 Jun; 34(36):. PubMed ID: 37192603
    [TBL] [Abstract][Full Text] [Related]  

  • 3. 1-Selector 1-Memristor Configuration with Multifunctional a-IGZO Memristive Devices Fabricated at Room Temperature.
    Li JC; Ma YX; Wu SH; Liu ZC; Ding PF; Dai D; Ding YT; Zhang YY; Huang Y; Lai PT; Wang YL
    ACS Appl Mater Interfaces; 2024 Apr; 16(14):17766-17777. PubMed ID: 38534058
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Highly uniform resistive switching properties of amorphous InGaZnO thin films prepared by a low temperature photochemical solution deposition method.
    Hu W; Zou L; Chen X; Qin N; Li S; Bao D
    ACS Appl Mater Interfaces; 2014 Apr; 6(7):5012-7. PubMed ID: 24635893
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Amorphous Boron Nitride Memristive Device for High-Density Memory and Neuromorphic Computing Applications.
    Khot AC; Dongale TD; Nirmal KA; Sung JH; Lee HJ; Nikam RD; Kim TG
    ACS Appl Mater Interfaces; 2022 Mar; 14(8):10546-10557. PubMed ID: 35179364
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Digital and analog functionality in monolayer AlOx-based memristors with various oxidizer sources.
    Zhan X; Zhao G; Yu X; Chen B; Chen J
    Nanotechnology; 2021 Jun; 32(35):. PubMed ID: 34010819
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Multi-Level Resistive Switching in SnSe/SrTiO
    Ho TL; Ding K; Lyapunov N; Suen CH; Wong LW; Zhao J; Yang M; Zhou X; Dai JY
    Nanomaterials (Basel); 2022 Jun; 12(13):. PubMed ID: 35807964
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materials.
    Prakash A; Maikap S; Banerjee W; Jana D; Lai CS
    Nanoscale Res Lett; 2013 Sep; 8(1):379. PubMed ID: 24011235
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Effects of Al Addition on Resistive-Switching Characteristics of Solution Processed Zn-Sn-O ReRAMs.
    Kim TW; Cho WJ
    J Nanosci Nanotechnol; 2019 Oct; 19(10):6099-6105. PubMed ID: 31026916
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Resistive switching and role of interfaces in memristive devices based on amorphous NbO
    Leonetti G; Fretto M; Bejtka K; Olivetti ES; Pirri FC; De Leo N; Valov I; Milano G
    Phys Chem Chem Phys; 2023 May; 25(21):14766-14777. PubMed ID: 37145117
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Digital to analog resistive switching transition induced by graphene buffer layer in strontium titanate based devices.
    Wan T; Qu B; Du H; Lin X; Lin Q; Wang DW; Cazorla C; Li S; Liu S; Chu D
    J Colloid Interface Sci; 2018 Feb; 512():767-774. PubMed ID: 29112927
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Analog Resistive Switching and Artificial Synaptic Behavior of ITO/WO
    Cho Y; Kim J; Kang M; Kim S
    Materials (Basel); 2023 Feb; 16(4):. PubMed ID: 36837316
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Study on the Sodium-Doped Titania Interface-Type Memristor.
    Kim M; Lee S; Kim SJ; Lim BM; Kang BS; Lee HS
    ACS Appl Mater Interfaces; 2024 Apr; 16(13):16453-16461. PubMed ID: 38516695
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Area-Type Electronic Bipolar Switching Al/TiO
    Yan Y; Li JC; Chen YT; Wang XY; Cai GR; Park HW; Kim JH; Zhao JS; Hwang CS
    ACS Appl Mater Interfaces; 2021 Aug; 13(33):39561-39572. PubMed ID: 34378371
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Statistical Analysis of Uniform Switching Characteristics of Ta
    Jin S; Kwon JD; Kim Y
    Materials (Basel); 2021 Oct; 14(21):. PubMed ID: 34771802
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Impact of Top Electrodes on the Nonvolatile Resistive Switching Properties of Citrus Thin Films.
    Lin KW; Wang TY; Chang YC
    Polymers (Basel); 2021 Feb; 13(5):. PubMed ID: 33652819
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering.
    Ismail M; Mahata C; Kang M; Kim S
    Nanoscale Res Lett; 2022 Jun; 17(1):61. PubMed ID: 35749003
    [TBL] [Abstract][Full Text] [Related]  

  • 18. A New Approach to the Fabrication of Memristive Neuromorphic Devices: Compositionally Graded Films.
    Yoon JG
    Materials (Basel); 2020 Aug; 13(17):. PubMed ID: 32825397
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Memristors Using Solution-Based IGZO Nanoparticles.
    Rosa J; Kiazadeh A; Santos L; Deuermeier J; Martins R; Gomes HL; Fortunato E
    ACS Omega; 2017 Nov; 2(11):8366-8372. PubMed ID: 31457375
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Thousands of conductance levels in memristors integrated on CMOS.
    Rao M; Tang H; Wu J; Song W; Zhang M; Yin W; Zhuo Y; Kiani F; Chen B; Jiang X; Liu H; Chen HY; Midya R; Ye F; Jiang H; Wang Z; Wu M; Hu M; Wang H; Xia Q; Ge N; Li J; Yang JJ
    Nature; 2023 Mar; 615(7954):823-829. PubMed ID: 36991190
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 6.