These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

170 related articles for article (PubMed ID: 37630068)

  • 21. Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors.
    Sandupatla A; Arulkumaran S; Ing NG; Nitta S; Kennedy J; Amano H
    Micromachines (Basel); 2020 May; 11(5):. PubMed ID: 32443764
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Highly Sensitive Photoelectric Detection and Imaging Enhanced by the Pyro-Phototronic Effect Based on a Photoinduced Dynamic Schottky Effect in 4H-SiC.
    Zhang Y; Wang YC; Wang L; Zhu L; Wang ZL
    Adv Mater; 2022 Sep; 34(35):e2204363. PubMed ID: 35817411
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Evaluation of Schottky barrier diodes fabricated directly on processed 4H-SiC(0001) surfaces.
    Sano Y; Shirasawa Y; Okamoto T; Yamauchi K
    J Nanosci Nanotechnol; 2011 Apr; 11(4):2809-13. PubMed ID: 21776636
    [TBL] [Abstract][Full Text] [Related]  

  • 24. AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics.
    Jorudas J; Šimukovič A; Dub M; Sakowicz M; Prystawko P; Indrišiūnas S; Kovalevskij V; Rumyantsev S; Knap W; Kašalynas I
    Micromachines (Basel); 2020 Dec; 11(12):. PubMed ID: 33419371
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer.
    Li Y; Liang T; Lei C; Hong Y; Li W; Li Z; Ghaffar A; Li Q; Xiong J
    Micromachines (Basel); 2019 Sep; 10(10):. PubMed ID: 31547087
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Emerging SiC Applications beyond Power Electronic Devices.
    La Via F; Alquier D; Giannazzo F; Kimoto T; Neudeck P; Ou H; Roncaglia A; Saddow SE; Tudisco S
    Micromachines (Basel); 2023 Jun; 14(6):. PubMed ID: 37374785
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Wide-Bandgap Semiconductors for Radiation Detection: A Review.
    Capan I
    Materials (Basel); 2024 Mar; 17(5):. PubMed ID: 38473617
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Highly sensitive visible-blind extreme ultraviolet Ni/4H-SiC Schottky photodiodes with large detection area.
    Hu J; Xin X; Zhao JH; Yan F; Guan B; Seely J; Kjornrattanawanich B
    Opt Lett; 2006 Jun; 31(11):1591-3. PubMed ID: 16688230
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Wear-Resisting and Stable 4H-SiC/Cu-Based Tribovoltaic Nanogenerators for Self-Powered Sensing in a Harsh Environment.
    Xia J; Luo X; Li J; Zhu L; Wang ZL
    ACS Appl Mater Interfaces; 2022 Dec; 14(49):55192-55200. PubMed ID: 36461926
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency.
    Sandupatla A; Arulkumaran S; Ranjan K; Ng GI; Murmu PP; Kennedy J; Nitta S; Honda Y; Deki M; Amano H
    Sensors (Basel); 2019 Nov; 19(23):. PubMed ID: 31766532
    [TBL] [Abstract][Full Text] [Related]  

  • 31. 4H-SiC Schottky Barrier Diodes for Efficient Thermal Neutron Detection.
    Bernat R; Bakrač L; Radulović V; Snoj L; Makino T; Ohshima T; Pastuović Ž; Capan I
    Materials (Basel); 2021 Sep; 14(17):. PubMed ID: 34501192
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Effects of gamma-ray irradiation on material and electrical properties of AlN gate dielectric on 4H-SiC.
    Zhu X; Shen Z; Wang ZJ; Liu Z; Miao Y; Yue S; Fu Z; Li Z; Zhang Y; Hong R; Wu S; Chen X; Cai J; Fu D; Zhang F
    Nanotechnology; 2024 Apr; 35(27):. PubMed ID: 38574479
    [TBL] [Abstract][Full Text] [Related]  

  • 33. A self-biased neutron detector based on an SiC semiconductor for a harsh environment.
    Ha JH; Kang SM; Park SH; Kim HS; Lee NH; Song TY
    Appl Radiat Isot; 2009; 67(7-8):1204-7. PubMed ID: 19362006
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes.
    Lioliou G; Mazzillo MC; Sciuto A; Barnett AM
    Opt Express; 2015 Aug; 23(17):21657-70. PubMed ID: 26368145
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Dependence of conduction characteristics on compensation type and lattice structure of SiC photoconductive semiconductor switches.
    Feng Z; Xiao L; Luan C; Li Y; Sha H; Li H; Xu X
    Appl Opt; 2021 Apr; 60(11):3182-3186. PubMed ID: 33983217
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Radiation Hardness of 4H-SiC P-N Junction UV Photo-Detector.
    Sciuto A; Calcagno L; Di Franco S; Pellegrino D; Selgi LM; D'Arrigo G
    Materials (Basel); 2021 Dec; 15(1):. PubMed ID: 35009409
    [TBL] [Abstract][Full Text] [Related]  

  • 37. A fast-neutron detection detector based on fission material and large sensitive 4H silicon carbide Schottky diode detector.
    Liu L; Liu J; Zhang J; Chen L; Zhang X; Zhang Z; Ruan J; Jin P; Bai S; Ouyang X
    Rev Sci Instrum; 2017 Dec; 88(12):123503. PubMed ID: 29289229
    [TBL] [Abstract][Full Text] [Related]  

  • 38. High-Performance Ultraviolet Photodetector Based on Single-Crystal Integrated Self-Supporting 4H-SiC Nanohole Arrays.
    Wang K; Wang H; Chen C; Li W; Wang L; Hu F; Gao F; Yang W; Wang Z; Chen S
    ACS Appl Mater Interfaces; 2023 May; 15(19):23457-23469. PubMed ID: 37148254
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation.
    Kato M; Watanabe O; Mii T; Sakane H; Harada S
    Sci Rep; 2022 Nov; 12(1):18790. PubMed ID: 36335202
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Fabrication and Characterization of Oxygenated AlN/4H-SiC Heterojunction Diodes.
    Kim DH; Min SJ; Oh JM; Koo SM
    Materials (Basel); 2020 Sep; 13(19):. PubMed ID: 33003505
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 9.