These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

186 related articles for article (PubMed ID: 37630930)

  • 21. Enhanced Performance of P-Channel CuIBr Thin-Film Transistor by ITO Surface Charge-Transfer Doping.
    Gao M; Wei W; Wang Z; Yu ZG; Zhang YW; Zhu C
    ACS Appl Mater Interfaces; 2024 Aug; 16(31):41176-41184. PubMed ID: 39072613
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Hafnium Incorporation in InZnO Thin Film Transistors as a Carrier Suppressor.
    Lee D; Choi P; Park A; Jeon W; Choi D; Lee S; Choi B
    J Nanosci Nanotechnol; 2020 Nov; 20(11):6675-6678. PubMed ID: 32604495
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Low-Temperature and Solution-Processable Zinc Oxide Transistors for Transparent Electronics.
    Jiang L; Li J; Huang K; Li S; Wang Q; Sun Z; Mei T; Wang J; Zhang L; Wang N; Wang X
    ACS Omega; 2017 Dec; 2(12):8990-8996. PubMed ID: 31457423
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Improvement of solution-processed Zn-Sn-O active-layer thin film transistors by novel high valence Mo doping.
    Peng C; Dong P; Li X
    Nanotechnology; 2021 Jan; 32(2):025207. PubMed ID: 32987367
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Room-Temperature Solution-Synthesized p-Type Copper(I) Iodide Semiconductors for Transparent Thin-Film Transistors and Complementary Electronics.
    Liu A; Zhu H; Park WT; Kang SJ; Xu Y; Kim MG; Noh YY
    Adv Mater; 2018 Jul; ():e1802379. PubMed ID: 29974529
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Impact of the cation composition on the electrical performance of solution-processed zinc tin oxide thin-film transistors.
    Kim YJ; Oh S; Yang BS; Han SJ; Lee HW; Kim HJ; Jeong JK; Hwang CS; Kim HJ
    ACS Appl Mater Interfaces; 2014 Aug; 6(16):14026-36. PubMed ID: 25090286
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack.
    Cho MH; Choi CH; Seul HJ; Cho HC; Jeong JK
    ACS Appl Mater Interfaces; 2021 Apr; 13(14):16628-16640. PubMed ID: 33793185
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Flexible thin-film transistors on plastic substrate at room temperature.
    Han D; Wang W; Cai J; Wang L; Ren Y; Wang Y; Zhang S
    J Nanosci Nanotechnol; 2013 Jul; 13(7):5154-7. PubMed ID: 23901545
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture.
    Yu X; Zhou N; Smith J; Lin H; Stallings K; Yu J; Marks TJ; Facchetti A
    ACS Appl Mater Interfaces; 2013 Aug; 5(16):7983-8. PubMed ID: 23876148
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Improving the electrical properties of transparent ZnO-based thin- film transistors using MgO gate dielectric with various oxygen concentrations.
    Hwang JD; Hsu ZR
    Nanotechnology; 2023 Nov; 35(4):. PubMed ID: 37669648
    [TBL] [Abstract][Full Text] [Related]  

  • 31. High-Performance Tin Oxide Thin-Film Transistors Realized by Codoping and Their Application in Logic Circuits.
    Zhang T; Wei YF; Zhang CS; He G; Li TJ; Lin D
    ACS Appl Mater Interfaces; 2024 Jul; 16(28):36577-36585. PubMed ID: 38972068
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition.
    Yoon SM; Seong NJ; Choi K; Seo GH; Shin WC
    ACS Appl Mater Interfaces; 2017 Jul; 9(27):22676-22684. PubMed ID: 28653825
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Self-Aligned Ionic Doping of TiO
    Zhang J; Zhao H; Ye X; Jia M; Lin G; Yang Z; Wang Y; Wei S; Lin Y; Sun Q; Zhama T; Yang W; Zeng Y
    ACS Appl Mater Interfaces; 2024 Sep; 16(38):51010-51019. PubMed ID: 39283697
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors.
    Jeong Y; Pearson C; Kim HG; Park MY; Kim H; Do LM; Petty MC
    ACS Appl Mater Interfaces; 2016 Jan; 8(3):2061-70. PubMed ID: 26704352
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Stretchable Polymer Gate Dielectric by Ultraviolet-Assisted Hafnium Oxide Doping at Low Temperature for High-Performance Indium Gallium Tin Oxide Transistors.
    Hur JS; Kim JO; Kim HA; Jeong JK
    ACS Appl Mater Interfaces; 2019 Jun; 11(24):21675-21685. PubMed ID: 31124358
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Lanthanum Doping in Zinc Oxide for Highly Reliable Thin-Film Transistors on Flexible Substrates by Spray Pyrolysis.
    Bukke RN; Saha JK; Mude NN; Kim Y; Lee S; Jang J
    ACS Appl Mater Interfaces; 2020 Aug; 12(31):35164-35174. PubMed ID: 32657115
    [TBL] [Abstract][Full Text] [Related]  

  • 37. CMOS-compatible synaptic transistor gated by chitosan electrolyte-Ta
    Min SY; Cho WJ
    Sci Rep; 2020 Sep; 10(1):15561. PubMed ID: 32968169
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Electrical Properties of Amorphous Indium Zinc Tin Oxide Thin Film Transistor with Y₂O₃ Gate Dielectric.
    Jauhari IM; Bak YG; Noviyana I; Putri MA; Lee JA; Heo YW; Lee HY
    J Nanosci Nanotechnol; 2021 Mar; 21(3):1748-1753. PubMed ID: 33404442
    [TBL] [Abstract][Full Text] [Related]  

  • 39. High-Quality Solution-Processed Silicon Oxide Gate Dielectric Applied on Indium Oxide Based Thin-Film Transistors.
    Jaehnike F; Pham DV; Anselmann R; Bock C; Kunze U
    ACS Appl Mater Interfaces; 2015 Jul; 7(25):14011-7. PubMed ID: 26039187
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Approaching subthreshold-swing limit for thin-film transistors by using a giant-dielectric-constant gate dielectric.
    Chen Z; Lan L; Peng J
    RSC Adv; 2019 Aug; 9(46):27117-27124. PubMed ID: 35528573
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 10.