These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

126 related articles for article (PubMed ID: 37636904)

  • 1. Monitoring of the Initial Stages of Diamond Growth on Aluminum Nitride Using In Situ Spectroscopic Ellipsometry.
    Leigh W; Mandal S; Cuenca JA; Wallis D; Hinz AM; Oliver RA; Thomas ELH; Williams O
    ACS Omega; 2023 Aug; 8(33):30442-30449. PubMed ID: 37636904
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Spectroscopic Ellipsometry of Nanocrystalline Diamond Film Growth.
    Thomas ELH; Mandal S; Ashek-I-Ahmed ; Macdonald JE; Dane TG; Rawle J; Cheng CL; Williams OA
    ACS Omega; 2017 Oct; 2(10):6715-6727. PubMed ID: 31457263
    [TBL] [Abstract][Full Text] [Related]  

  • 3. PEALD-Grown Crystalline AlN Films on Si (100) with Sharp Interface and Good Uniformity.
    Liu S; Peng M; Hou C; He Y; Li M; Zheng X
    Nanoscale Res Lett; 2017 Dec; 12(1):279. PubMed ID: 28423865
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition.
    Schilirò E; Giannazzo F; Di Franco S; Greco G; Fiorenza P; Roccaforte F; Prystawko P; Kruszewski P; Leszczynski M; Cora I; Pécz B; Fogarassy Z; Lo Nigro R
    Nanomaterials (Basel); 2021 Dec; 11(12):. PubMed ID: 34947665
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Barrier-Layer Optimization for Enhanced GaN-on-Diamond Device Cooling.
    Zhou Y; Anaya J; Pomeroy J; Sun H; Gu X; Xie A; Beam E; Becker M; Grotjohn TA; Lee C; Kuball M
    ACS Appl Mater Interfaces; 2017 Oct; 9(39):34416-34422. PubMed ID: 28901127
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance.
    Mandal S; Yuan C; Massabuau F; Pomeroy JW; Cuenca J; Bland H; Thomas E; Wallis D; Batten T; Morgan D; Oliver R; Kuball M; Williams OA
    ACS Appl Mater Interfaces; 2019 Oct; 11(43):40826-40834. PubMed ID: 31603642
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond.
    Field DE; Cuenca JA; Smith M; Fairclough SM; Massabuau FC; Pomeroy JW; Williams O; Oliver RA; Thayne I; Kuball M
    ACS Appl Mater Interfaces; 2020 Dec; 12(48):54138-54145. PubMed ID: 33196180
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates.
    Lee SM; Yum JH; Yoon S; Larsen ES; Lee WC; Kim SK; Shervin S; Wang W; Ryou JH; Bielawski CW; Oh J
    ACS Appl Mater Interfaces; 2017 Dec; 9(48):41973-41979. PubMed ID: 29148718
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling.
    Malakoutian M; Field DE; Hines NJ; Pasayat S; Graham S; Kuball M; Chowdhury S
    ACS Appl Mater Interfaces; 2021 Dec; 13(50):60553-60560. PubMed ID: 34875169
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition.
    Seppänen H; Kim I; Etula J; Ubyivovk E; Bouravleuv A; Lipsanen H
    Materials (Basel); 2019 Jan; 12(3):. PubMed ID: 30696077
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Optimal Growth Conditions for Forming
    Liu WS; Gururajan B; Wu SH; Huang LC; Chi CK; Jiang YL; Kuo HC
    Micromachines (Basel); 2022 Sep; 13(9):. PubMed ID: 36144169
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices.
    Yates L; Anderson J; Gu X; Lee C; Bai T; Mecklenburg M; Aoki T; Goorsky MS; Kuball M; Piner EL; Graham S
    ACS Appl Mater Interfaces; 2018 Jul; 10(28):24302-24309. PubMed ID: 29939717
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Layer Protecting the Surface of Zirconium Used in Nuclear Reactors.
    Ashcheulov P; Skoda R; Skarohlíd J; Taylor A; Fendrych F; Kratochvílová I
    Recent Pat Nanotechnol; 2016; 10(1):59-65. PubMed ID: 27018273
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Bulk-like Intrinsic Phonon Thermal Conductivity of Micrometer-Thick AlN Films.
    Koh YR; Cheng Z; Mamun A; Bin Hoque MS; Liu Z; Bai T; Hussain K; Liao ME; Li R; Gaskins JT; Giri A; Tomko J; Braun JL; Gaevski M; Lee E; Yates L; Goorsky MS; Luo T; Khan A; Graham S; Hopkins PE
    ACS Appl Mater Interfaces; 2020 Jul; 12(26):29443-29450. PubMed ID: 32491824
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Real Time Spectroscopic Ellipsometry Analysis of First Stage CuIn
    Pradhan P; Aryal P; Attygalle D; Ibdah AR; Koirala P; Li J; Bhandari KP; Liyanage GK; Ellingson RJ; Heben MJ; Marsillac S; Collins RW; Podraza NJ
    Materials (Basel); 2018 Jan; 11(1):. PubMed ID: 29337931
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Boron-Doped Diamond/GaN Heterojunction-The Influence of the Low-Temperature Deposition.
    Sobaszek M; Gnyba M; Kulesza S; Bramowicz M; Klimczuk T; Bogdanowicz R
    Materials (Basel); 2021 Oct; 14(21):. PubMed ID: 34771852
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Optical and Structural Properties of Aluminum Nitride Epi-Films at Room and High Temperature.
    Yang Y; Liu Y; Wang L; Zhang S; Lu H; Peng Y; Wei W; Yang J; Feng ZC; Wan L; Klein B; Ferguson IT; Sun W
    Materials (Basel); 2023 Nov; 16(23):. PubMed ID: 38068186
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Super High-Concentration Si and N Doping of CVD Diamond Film by Thermal Decomposition of Silicon Nitride Substrate.
    Yang Y; Wang Y; Yan H; Cao C; Chen N
    Materials (Basel); 2023 Aug; 16(17):. PubMed ID: 37687544
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Effect of carbon concentration on the optical properties of nanocrystalline diamond films deposited by hot-filament chemical vapor deposition method.
    Wang L; Liu J; Ren L; Su Q; Shi W; Xia Y
    J Nanosci Nanotechnol; 2008 May; 8(5):2534-9. PubMed ID: 18572679
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Processing and Thermal Conductivity of Bulk Nanocrystalline Aluminum Nitride.
    Duarte MA; Mishra V; Dames C; Kodera Y; Garay JE
    Materials (Basel); 2021 Sep; 14(19):. PubMed ID: 34639962
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.