These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
152 related articles for article (PubMed ID: 37651727)
1. Control over a Wide Phase Diagram of 2D Correlated Electrons by Surface Doping; K/1 Jung J; Jin KH; Kim J; Yeom HW Nano Lett; 2023 Sep; 23(17):8029-8034. PubMed ID: 37651727 [TBL] [Abstract][Full Text] [Related]
2. Pseudogap and Weak Multifractality in 2D Disordered Mott Charge-Density-Wave Insulator. Gao J; Park JW; Kim K; Song SK; Park HR; Lee J; Park J; Chen F; Luo X; Sun Y; Yeom HW Nano Lett; 2020 Sep; 20(9):6299-6305. PubMed ID: 32787162 [TBL] [Abstract][Full Text] [Related]
3. Band insulator to Mott insulator transition in 1T-TaS Wang YD; Yao WL; Xin ZM; Han TT; Wang ZG; Chen L; Cai C; Li Y; Zhang Y Nat Commun; 2020 Aug; 11(1):4215. PubMed ID: 32839433 [TBL] [Abstract][Full Text] [Related]
4. Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2. Cho D; Cheon S; Kim KS; Lee SH; Cho YH; Cheong SW; Yeom HW Nat Commun; 2016 Jan; 7():10453. PubMed ID: 26795073 [TBL] [Abstract][Full Text] [Related]
5. Robust charge-density wave strengthened by electron correlations in monolayer 1T-TaSe Nakata Y; Sugawara K; Chainani A; Oka H; Bao C; Zhou S; Chuang PY; Cheng CM; Kawakami T; Saruta Y; Fukumura T; Zhou S; Takahashi T; Sato T Nat Commun; 2021 Oct; 12(1):5873. PubMed ID: 34620875 [TBL] [Abstract][Full Text] [Related]
6. Origin of Distinct Insulating Domains in the Layered Charge Density Wave Material 1T-TaS Yang H; Lee B; Bang J; Kim S; Wulferding D; Lee SH; Cho D Adv Sci (Weinh); 2024 Jul; 11(28):e2401348. PubMed ID: 38728592 [TBL] [Abstract][Full Text] [Related]
7. Tunable Mott Dirac and Kagome Bands Engineered on 1 Lee D; Jin KH; Liu F; Yeom HW Nano Lett; 2022 Oct; 22(19):7902-7909. PubMed ID: 36162122 [TBL] [Abstract][Full Text] [Related]
8. Electrically driven reversible insulator-metal phase transition in 1T-TaS2. Hollander MJ; Liu Y; Lu WJ; Li LJ; Sun YP; Robinson JA; Datta S Nano Lett; 2015 Mar; 15(3):1861-6. PubMed ID: 25626012 [TBL] [Abstract][Full Text] [Related]
9. Engineering Domain Wall Electronic States in Strongly Correlated van der Waals Material of 1T-TaS Yao Q; Park JW; Oh E; Yeom HW Nano Lett; 2021 Nov; 21(22):9699-9705. PubMed ID: 34738815 [TBL] [Abstract][Full Text] [Related]
10. Distinguishing a Mott Insulator from a Trivial Insulator with Atomic Adsorbates. Lee J; Jin KH; Yeom HW Phys Rev Lett; 2021 May; 126(19):196405. PubMed ID: 34047567 [TBL] [Abstract][Full Text] [Related]
11. Correlated electronic states at domain walls of a Mott-charge-density-wave insulator 1T-TaS Cho D; Gye G; Lee J; Lee SH; Wang L; Cheong SW; Yeom HW Nat Commun; 2017 Aug; 8(1):392. PubMed ID: 28855505 [TBL] [Abstract][Full Text] [Related]
12. A metallic mosaic phase and the origin of Mott-insulating state in 1T-TaS2. Ma L; Ye C; Yu Y; Lu XF; Niu X; Kim S; Feng D; Tománek D; Son YW; Chen XH; Zhang Y Nat Commun; 2016 Mar; 7():10956. PubMed ID: 26961788 [TBL] [Abstract][Full Text] [Related]
13. First-order quantum phase transition in the hybrid metal-Mott insulator transition metal dichalcogenide 4Hb-TaS Kumar Nayak A; Steinbok A; Roet Y; Koo J; Feldman I; Almoalem A; Kanigel A; Yan B; Rosch A; Avraham N; Beidenkopf H Proc Natl Acad Sci U S A; 2023 Oct; 120(43):e2304274120. PubMed ID: 37856542 [TBL] [Abstract][Full Text] [Related]
14. Momentum-resolved visualization of electronic evolution in doping a Mott insulator. Hu C; Zhao J; Gao Q; Yan H; Rong H; Huang J; Liu J; Cai Y; Li C; Chen H; Zhao L; Liu G; Jin C; Xu Z; Xiang T; Zhou XJ Nat Commun; 2021 Mar; 12(1):1356. PubMed ID: 33649302 [TBL] [Abstract][Full Text] [Related]
15. Dualistic insulator states in 1T-TaS Wang Y; Li Z; Luo X; Gao J; Han Y; Jiang J; Tang J; Ju H; Li T; Lv R; Cui S; Yang Y; Sun Y; Zhu J; Gao X; Lu W; Sun Z; Xu H; Xiong Y; Cao L Nat Commun; 2024 Apr; 15(1):3425. PubMed ID: 38653984 [TBL] [Abstract][Full Text] [Related]
16. Gate-tunable phase transitions in thin flakes of 1T-TaS2. Yu Y; Yang F; Lu XF; Yan YJ; Cho YH; Ma L; Niu X; Kim S; Son YW; Feng D; Li S; Cheong SW; Chen XH; Zhang Y Nat Nanotechnol; 2015 Mar; 10(3):270-6. PubMed ID: 25622230 [TBL] [Abstract][Full Text] [Related]
17. Reversible Insulator-Metal Transition by Chemical Doping and Dedoping of a Mott Insulator. Teruya R; Sato T; Yamashita M; Hanasaki N; Ueda A; Matsuda M Angew Chem Int Ed Engl; 2022 Aug; 61(34):e202206428. PubMed ID: 35676224 [TBL] [Abstract][Full Text] [Related]
18. Visualizing Spatial Evolution of Electron-Correlated Interface in Two-Dimensional Heterostructures. Zhang Q; Hou Y; Zhang T; Xu Z; Huang Z; Yuan P; Jia L; Yang H; Huang Y; Ji W; Qiao J; Wu X; Wang Y ACS Nano; 2021 Oct; 15(10):16589-16596. PubMed ID: 34606233 [TBL] [Abstract][Full Text] [Related]
19. Continuous tuning of electronic correlations by alkali adsorption on layered 1T-TaS2. Rossnagel K; Rotenberg E; Koh H; Smith NV; Kipp L Phys Rev Lett; 2005 Sep; 95(12):126403. PubMed ID: 16197092 [TBL] [Abstract][Full Text] [Related]
20. Tailoring Materials for Mottronics: Excess Oxygen Doping of a Prototypical Mott Insulator. Scheiderer P; Schmitt M; Gabel J; Zapf M; Stübinger M; Schütz P; Dudy L; Schlueter C; Lee TL; Sing M; Claessen R Adv Mater; 2018 Jun; 30(25):e1706708. PubMed ID: 29732633 [TBL] [Abstract][Full Text] [Related] [Next] [New Search]