These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

111 related articles for article (PubMed ID: 37687761)

  • 21. Influence of Low-Temperature Cap Layer Thickness on Luminescence Characteristics of Green InGaN/GaN Quantum Wells.
    Sun H; Chen Y; Ben Y; Zhang H; Zhao Y; Jin Z; Li G; Zhou M
    Materials (Basel); 2023 Feb; 16(4):. PubMed ID: 36837187
    [TBL] [Abstract][Full Text] [Related]  

  • 22. Effects of thermal annealing on the structural and optical properties of carbon-implanted SiO2.
    Poudel PR; Paramo JA; Poudel PP; Diercks DR; Strzhemechny YM; Rout B; McDaniel FD
    J Nanosci Nanotechnol; 2012 Mar; 12(3):1835-42. PubMed ID: 22754988
    [TBL] [Abstract][Full Text] [Related]  

  • 23. Iterative bandgap engineering at selected areas of quantum semiconductor wafers.
    Stanowski R; Martin M; Ares R; Dubowski JJ
    Opt Express; 2009 Oct; 17(22):19842-7. PubMed ID: 19997205
    [TBL] [Abstract][Full Text] [Related]  

  • 24. Insights into Growth-Oriented Interfacial Modulation within Semiconductor Multilayers.
    Wu Y; Zhang Y; Zhao Y; Cai C; Zhang Y; Zhang Y; Liang C; Xu Y; Niu Z; Shi Y; Che R
    ACS Appl Mater Interfaces; 2021 Jun; 13(23):27262-27269. PubMed ID: 34080413
    [TBL] [Abstract][Full Text] [Related]  

  • 25. Strain modulated luminescence in green InGaN/GaN multiple quantum wells with microwire array by piezo-phototronic effect.
    Chen R; Yin Y; Wang L; Gao Y; He R; Ran J; Wang J; Li J; Wei T
    Opt Lett; 2022 Dec; 47(23):6157-6160. PubMed ID: 37219196
    [TBL] [Abstract][Full Text] [Related]  

  • 26. Surface passivation and interface properties of bulk GaAs and epitaxial-GaAs/Ge using atomic layer deposited TiAlO alloy dielectric.
    Dalapati GK; Chia CK; Tan CC; Tan HR; Chiam SY; Dong JR; Das A; Chattopadhyay S; Mahata C; Maiti CK; Chi DZ
    ACS Appl Mater Interfaces; 2013 Feb; 5(3):949-57. PubMed ID: 23331503
    [TBL] [Abstract][Full Text] [Related]  

  • 27. Nano-fabrication and related optical properties of InGaN/GaN nanopillars.
    Hu Y; Hao Z; Lai W; Geng C; Luo Y; Yan Q
    Nanotechnology; 2015 Feb; 26(7):075302. PubMed ID: 25629234
    [TBL] [Abstract][Full Text] [Related]  

  • 28. Numerical investigation of strain effects on properties of AlGaAs/InGaAs multiple quantum well solar cells.
    Abolghasemi A; Kohandani R
    Appl Opt; 2018 Aug; 57(24):7045-7054. PubMed ID: 30129597
    [TBL] [Abstract][Full Text] [Related]  

  • 29. Radial Growth Evolution of InGaAs/InP Multi-Quantum-Well Nanowires Grown by Selective-Area Metal Organic Vapor-Phase Epitaxy.
    Yang I; Zhang X; Zheng C; Gao Q; Li Z; Li L; Lockrey MN; Nguyen H; Caroff P; Etheridge J; Tan HH; Jagadish C; Wong-Leung J; Fu L
    ACS Nano; 2018 Oct; 12(10):10374-10382. PubMed ID: 30281281
    [TBL] [Abstract][Full Text] [Related]  

  • 30. Effects of the c-Si/a-SiO
    Zheng F; Pham HH; Wang LW
    Phys Chem Chem Phys; 2017 Dec; 19(48):32617-32625. PubMed ID: 29192712
    [TBL] [Abstract][Full Text] [Related]  

  • 31. Band edge tailoring of InGaAs/AlAsSb coupled double quantum wells for a monolithically integrated all-optical switch.
    Feng J; Akimoto R; Gozu S; Mozume T; Hasama T; Ishikawa H
    Opt Express; 2013 Jul; 21(13):15840-6. PubMed ID: 23842370
    [TBL] [Abstract][Full Text] [Related]  

  • 32. Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1-xBix/GaAs heterostructures.
    Mazur YI; Dorogan VG; de Souza LD; Fan D; Benamara M; Schmidbauer M; Ware ME; Tarasov GG; Yu SQ; Marques GE; Salamo GJ
    Nanotechnology; 2014 Jan; 25(3):035702. PubMed ID: 24346504
    [TBL] [Abstract][Full Text] [Related]  

  • 33. Optical properties of as-grown and annealed InAs quantum dots on InGaAs cross-hatch patterns.
    Himwas C; Panyakeow S; Kanjanachuchai S
    Nanoscale Res Lett; 2011 Aug; 6(1):496. PubMed ID: 21849063
    [TBL] [Abstract][Full Text] [Related]  

  • 34. Bright Mid-Infrared Photoluminescence from Thin-Film Black Phosphorus.
    Chen C; Chen F; Chen X; Deng B; Eng B; Jung D; Guo Q; Yuan S; Watanabe K; Taniguchi T; Lee ML; Xia F
    Nano Lett; 2019 Mar; 19(3):1488-1493. PubMed ID: 30721622
    [TBL] [Abstract][Full Text] [Related]  

  • 35. Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 microm bands.
    Hazdra P; Oswald J; Komarnitskyy V; Kuldová K; Hospodková A; Hulicius E; Pangrác J
    J Nanosci Nanotechnol; 2011 Aug; 11(8):6804-9. PubMed ID: 22103083
    [TBL] [Abstract][Full Text] [Related]  

  • 36. Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980-990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition.
    Shamakhov V; Slipchenko S; Nikolaev D; Smirnov A; Eliseyev I; Grishin A; Kondratov M; Shashkin I; Pikhtin N
    Nanomaterials (Basel); 2023 Aug; 13(17):. PubMed ID: 37686894
    [TBL] [Abstract][Full Text] [Related]  

  • 37. Photoluminescence characterization of wetting layer and carrier dynamics for coupled InGaAs/GaAs surface quantum dot pair structures.
    Liu J; Yuan Q; Liang B; Yan Q; Wang Y; Wang C; Wang S; Fu G; Mazur YI; Ware ME; Salamo GJ
    Opt Express; 2020 Jul; 28(14):20704-20713. PubMed ID: 32680124
    [TBL] [Abstract][Full Text] [Related]  

  • 38. Luminescence from Droplet-Etched GaAs Quantum Dots at and Close to Room Temperature.
    Ranasinghe L; Heyn C; Deneke K; Zocher M; Korneev R; Hansen W
    Nanomaterials (Basel); 2021 Mar; 11(3):. PubMed ID: 33802007
    [TBL] [Abstract][Full Text] [Related]  

  • 39. Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen.
    Sousa MA; Esteves TC; Sedrine NB; Rodrigues J; Lourenço MB; Redondo-Cubero A; Alves E; O'Donnell KP; Bockowski M; Wetzel C; Correia MR; Lorenz K; Monteiro T
    Sci Rep; 2015 Apr; 5():9703. PubMed ID: 25853988
    [TBL] [Abstract][Full Text] [Related]  

  • 40. Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well.
    Tatebayashi J; Liang BL; Laghumavarapu RB; Bussian DA; Htoon H; Klimov V; Balakrishnan G; Dawson LR; Huffaker DL
    Nanotechnology; 2008 Jul; 19(29):295704. PubMed ID: 21730609
    [TBL] [Abstract][Full Text] [Related]  

    [Previous]   [Next]    [New Search]
    of 6.