These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

148 related articles for article (PubMed ID: 37763439)

  • 1. Influence of Channel Surface with Ozone Annealing and UV Treatment on the Electrical Characteristics of Top-Gate InGaZnO Thin-Film Transistors.
    Oh C; Kim T; Ju MW; Kim MY; Park SH; Lee GH; Kim H; Kim S; Kim BS
    Materials (Basel); 2023 Sep; 16(18):. PubMed ID: 37763439
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y
    Jung H; Kim WH; Park BE; Woo WJ; Oh IK; Lee SJ; Kim YC; Myoung JM; Gatineau S; Dussarrat C; Kim H
    ACS Appl Mater Interfaces; 2018 Jan; 10(2):2143-2150. PubMed ID: 29277990
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Organic/Inorganic Hybrid Buffer in InGaZnO Transistors under Repetitive Bending Stress for High Electrical and Mechanical Stability.
    Han KL; Han JH; Kim BS; Jeong HJ; Choi JM; Hwang JE; Oh S; Park JS
    ACS Appl Mater Interfaces; 2020 Jan; 12(3):3784-3791. PubMed ID: 31878779
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiO
    Zhang W; Fan Z; Shen A; Dong C
    Micromachines (Basel); 2021 Dec; 12(12):. PubMed ID: 34945401
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Graded Channel Junctionless InGaZnO Thin-Film Transistors with Both High Transporting Properties and Good Bias Stress Stability.
    Liu J; Guo J; Yang W; Wang C; Yuan B; Liu J; Wu Z; Zhang Q; Liu D; Chen H; Yu Y; Liu S; Shao G; Yao Z
    ACS Appl Mater Interfaces; 2020 Sep; 12(39):43950-43957. PubMed ID: 32886486
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Dual active layer a-IGZO TFT via homogeneous conductive layer formation by photochemical H-doping.
    Jeong SK; Kim MH; Lee SY; Seo H; Choi DK
    Nanoscale Res Lett; 2014; 9(1):619. PubMed ID: 25435832
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses.
    Wang D; Furuta M
    Beilstein J Nanotechnol; 2018; 9():2573-2580. PubMed ID: 30425903
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Effects of Intense Pulsed Light (IPL) Rapid Annealing and Back-Channel Passivation on Solution-Processed In-Ga-Zn-O Thin Film Transistors Array.
    Kim HJ; Han CJ; Yoo B; Lee J; Lee K; Lee KH; Oh MS
    Micromachines (Basel); 2020 May; 11(5):. PubMed ID: 32443447
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Ultra-thin gate insulator of atomic-layer-deposited AlO
    Li J; Guan Y; Li J; Zhang Y; Zhang Y; Chan M; Wang X; Lu L; Zhang S
    Nanotechnology; 2023 Apr; 34(26):. PubMed ID: 36962937
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Ultraviolet-Assisted Low-Thermal-Budget-Driven α-InGaZnO Thin Films for High-Performance Transistors and Logic Circuits.
    Zhang Y; He G; Wang L; Wang W; Xu X; Liu W
    ACS Nano; 2022 Mar; 16(3):4961-4971. PubMed ID: 35274929
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Performance Enhancement of Channel-Engineered Al-Zn-Sn-O Thin-Film Transistors with Highly Conductive In-Ga-Zn-O Buried Layer via Vacuum Rapid Thermal Annealing.
    Kim SH; Cho WJ
    J Nanosci Nanotechnol; 2020 Aug; 20(8):4671-4677. PubMed ID: 32126639
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors.
    Zhou Y; Dong C
    Micromachines (Basel); 2018 Nov; 9(11):. PubMed ID: 30453615
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Vertically Graded Oxygen Deficiency for Improving Electrical Characteristics and Stability of Indium Gallium Zinc Oxide Thin-Film Transistors.
    Yoon CS; Kim HT; Kim MS; Yoo H; Park JW; Choi DH; Kim D; Kim HJ
    ACS Appl Mater Interfaces; 2021 Jan; 13(3):4110-4116. PubMed ID: 33448781
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths.
    Bae SH; Yang JH; Kim YH; Kwon YH; Seong NJ; Choi KJ; Hwang CS; Yoon SM
    ACS Appl Mater Interfaces; 2022 Jul; 14(27):31010-31023. PubMed ID: 35785988
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Periodically pulsed wet annealing approach for low-temperature processable amorphous InGaZnO thin film transistors with high electrical performance and ultrathin thickness.
    Kim YK; Ahn CH; Yun MG; Cho SW; Kang WJ; Cho HK
    Sci Rep; 2016 May; 6():26287. PubMed ID: 27198067
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Near-Ideal Top-Gate Controllability of InGaZnO Thin-Film Transistors by Suppressing Interface Defects with an Ultrathin Atomic Layer Deposited Gate Insulator.
    Li J; Zhang Y; Wang J; Yang H; Zhou X; Chan M; Wang X; Lu L; Zhang S
    ACS Appl Mater Interfaces; 2023 Feb; 15(6):8666-8675. PubMed ID: 36709447
    [TBL] [Abstract][Full Text] [Related]  

  • 17. Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar-O
    Liu WS; Hsu CH; Jiang Y; Lai YC; Kuo HC
    Membranes (Basel); 2021 Dec; 12(1):. PubMed ID: 35054574
    [TBL] [Abstract][Full Text] [Related]  

  • 18. Microwave annealing effect for highly reliable biosensor: dual-gate ion-sensitive field-effect transistor using amorphous InGaZnO thin-film transistor.
    Lee IK; Lee KH; Lee S; Cho WJ
    ACS Appl Mater Interfaces; 2014 Dec; 6(24):22680-6. PubMed ID: 25456792
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Origin of the High Density of Oxygen Vacancies at the Back Channel of Back-Channel-Etched a-InGaZnO Thin-Film Transistors.
    Ge S; Xiao J; Li S; Yuan D; Dong Y; Zhang S
    Micromachines (Basel); 2024 Mar; 15(3):. PubMed ID: 38542647
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Improved Mobility and Bias Stability of Thin Film Transistors Using the Double-Layer a-InGaZnO/a-InGaZnO:N Channel.
    Yu H; Zhang L; Li XH; Xu HY; Liu YC
    J Nanosci Nanotechnol; 2016 Apr; 16(4):3659-63. PubMed ID: 27451684
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 8.