These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.
3. High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode. Li Z; Fu Y; Piels M; Pan H; Beling A; Bowers JE; Campbell JC Opt Express; 2011 Dec; 19(26):B385-90. PubMed ID: 22274046 [TBL] [Abstract][Full Text] [Related]
4. Analysis of frequency response of high power MUTC photodiodes based on photocurrent-dependent equivalent circuit model. Li J; Xiong B; Sun C; Miao D; Luo Y Opt Express; 2015 Aug; 23(17):21615-23. PubMed ID: 26368140 [TBL] [Abstract][Full Text] [Related]
5. High saturation photocurrent THz waveguide-type MUTC-photodiodes reaching mW output power within the WR3.4 band. Grzeslo M; Dülme S; Clochiatti S; Neerfeld T; Haddad T; Lu P; Tebart J; Makhlouf S; Biurrun-Quel C; Fernández Estévez JL; Lackmann J; Weimann N; Stöhr A Opt Express; 2023 Feb; 31(4):6484-6498. PubMed ID: 36823903 [TBL] [Abstract][Full Text] [Related]
6. Design of modified InGaAs/InP one-sided junction photodiodes with improved response at high light intensity. Xu J; Zhang X; Kishk A Appl Opt; 2018 Nov; 57(31):9365-9374. PubMed ID: 30461980 [TBL] [Abstract][Full Text] [Related]
7. Low dark current III-V on silicon photodiodes by heteroepitaxy. Sun K; Jung D; Shang C; Liu A; Morgan J; Zang J; Li Q; Klamkin J; Bowers JE; Beling A Opt Express; 2018 May; 26(10):13605-13613. PubMed ID: 29801383 [TBL] [Abstract][Full Text] [Related]
8. Design of broadband and high-output power uni-traveling-carrier photodiodes. Zhang R; Hraimel B; Li X; Zhang P; Zhang X Opt Express; 2013 Mar; 21(6):6943-54. PubMed ID: 23546077 [TBL] [Abstract][Full Text] [Related]
9. High-responsivity vertical-illumination Si/Ge uni-traveling-carrier photodiodes based on silicon-on-insulator substrate. Li C; Xue C; Liu Z; Cong H; Cheng B; Hu Z; Guo X; Liu W Sci Rep; 2016 Jun; 6():27743. PubMed ID: 27279426 [TBL] [Abstract][Full Text] [Related]
10. Ultrafast MUTC photodiodes over 200 GHz with high saturation power. Tian Y; Xiong B; Sun C; Hao Z; Wang J; Wang L; Han Y; Li H; Gan L; Luo Y Opt Express; 2023 Jul; 31(15):23790-23800. PubMed ID: 37475221 [TBL] [Abstract][Full Text] [Related]
11. Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer. Hong KB; Peng CY; Lin WC; Chen KL; Chen SC; Kuo HC; Chang EY; Lin CH Micromachines (Basel); 2023 Feb; 14(3):. PubMed ID: 36984926 [TBL] [Abstract][Full Text] [Related]
12. Analysis of AM-to-PM conversion in MUTC photodiodes based on an equivalent circuit model. Song Z; Zhou Z; Huang J; Zou X; Yang C; Chen B Opt Express; 2021 Oct; 29(21):33582-33591. PubMed ID: 34809168 [TBL] [Abstract][Full Text] [Related]
13. Simulation and design of a high-speed and high-power modified uni-traveling carrier photodiode based on the electric field distribution in the depletion region. Wang X; Huang Y; Ren R; Du J; Yang M; Liu K; Duan X; Ren X Appl Opt; 2023 Feb; 62(4):1057-1065. PubMed ID: 36821163 [TBL] [Abstract][Full Text] [Related]
14. Measurement of Heat Dissipation and Thermal-Stability of Power Modules on DBC Substrates with Various Ceramics by SiC Micro-Heater Chip System and Ag Sinter Joining. Kim D; Yamamoto Y; Nagao S; Wakasugi N; Chen C; Suganuma K Micromachines (Basel); 2019 Oct; 10(11):. PubMed ID: 31683662 [TBL] [Abstract][Full Text] [Related]
15. Measurement and modeling of high-linearity modified uni-traveling carrier photodiode with highly-doped absorber. Pan H; Li Z; Beling A; Campbell JC Opt Express; 2009 Oct; 17(22):20221-6. PubMed ID: 19997246 [TBL] [Abstract][Full Text] [Related]