152 related articles for article (PubMed ID: 37812500)
1. Toward High-Performance p-Type Two-Dimensional Field Effect Transistors: Contact Engineering, Scaling, and Doping.
Oberoi A; Han Y; Stepanoff SP; Pannone A; Sun Y; Lin YC; Chen C; Shallenberger JR; Zhou D; Terrones M; Redwing JM; Robinson JA; Wolfe DE; Yang Y; Das S
ACS Nano; 2023 Oct; 17(20):19709-19723. PubMed ID: 37812500
[TBL] [Abstract][Full Text] [Related]
2. High-Performance Contact-Doped WSe
Liu B; Yue X; Sheng C; Chen J; Tang C; Shan Y; Han J; Shen S; Wu W; Li L; Lu Y; Hu L; Liu R; Qiu ZJ; Cong C
ACS Appl Mater Interfaces; 2024 Apr; 16(15):19247-19253. PubMed ID: 38591143
[TBL] [Abstract][Full Text] [Related]
3. Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors.
Chuang HJ; Chamlagain B; Koehler M; Perera MM; Yan J; Mandrus D; Tománek D; Zhou Z
Nano Lett; 2016 Mar; 16(3):1896-902. PubMed ID: 26844954
[TBL] [Abstract][Full Text] [Related]
4. Ultrascaled Contacts to Monolayer MoS
Schranghamer TF; Sakib NU; Sadaf MUK; Subbulakshmi Radhakrishnan S; Pendurthi R; Agyapong AD; Stepanoff SP; Torsi R; Chen C; Redwing JM; Robinson JA; Wolfe DE; Mohney SE; Das S
Nano Lett; 2023 Apr; 23(8):3426-3434. PubMed ID: 37058411
[TBL] [Abstract][Full Text] [Related]
5. Performance Limit of Monolayer WSe
Sun X; Xu L; Zhang Y; Wang W; Liu S; Yang C; Zhang Z; Lu J
ACS Appl Mater Interfaces; 2020 May; 12(18):20633-20644. PubMed ID: 32285659
[TBL] [Abstract][Full Text] [Related]
6. Selective p-Doping of 2D WSe
Yang S; Lee G; Kim J
ACS Appl Mater Interfaces; 2021 Jan; 13(1):955-961. PubMed ID: 33379863
[TBL] [Abstract][Full Text] [Related]
7. Highly Stable and Tunable Chemical Doping of Multilayer WS2 Field Effect Transistor: Reduction in Contact Resistance.
Khalil HM; Khan MF; Eom J; Noh H
ACS Appl Mater Interfaces; 2015 Oct; 7(42):23589-96. PubMed ID: 26434774
[TBL] [Abstract][Full Text] [Related]
8. Selective Electron Beam Patterning of Oxygen-Doped WSe
Ngo TD; Choi MS; Lee M; Ali F; Hassan Y; Ali N; Liu S; Lee C; Hone J; Yoo WJ
Adv Sci (Weinh); 2022 Sep; 9(26):e2202465. PubMed ID: 35853245
[TBL] [Abstract][Full Text] [Related]
9. Chloride molecular doping technique on 2D materials: WS2 and MoS2.
Yang L; Majumdar K; Liu H; Du Y; Wu H; Hatzistergos M; Hung PY; Tieckelmann R; Tsai W; Hobbs C; Ye PD
Nano Lett; 2014 Nov; 14(11):6275-80. PubMed ID: 25310177
[TBL] [Abstract][Full Text] [Related]
10. Barrier Formation at the Contacts of Vanadium Dioxide and Transition-Metal Dichalcogenides.
Yamamoto M; Nouchi R; Kanki T; Nakaharai S; Hattori AN; Watanabe K; Taniguchi T; Wakayama Y; Ueno K; Tanaka H
ACS Appl Mater Interfaces; 2019 Oct; 11(40):36871-36879. PubMed ID: 31525896
[TBL] [Abstract][Full Text] [Related]
11. End-Bonded Metal Contacts on WSe
Chu CH; Lin HC; Yeh CH; Liang ZY; Chou MY; Chiu PW
ACS Nano; 2019 Jul; 13(7):8146-8154. PubMed ID: 31244047
[TBL] [Abstract][Full Text] [Related]
12. High-Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions.
Liu B; Ma Y; Zhang A; Chen L; Abbas AN; Liu Y; Shen C; Wan H; Zhou C
ACS Nano; 2016 May; 10(5):5153-60. PubMed ID: 27159780
[TBL] [Abstract][Full Text] [Related]
13. p-Type Conversion of WS
Kato R; Uchiyama H; Nishimura T; Ueno K; Taniguchi T; Watanabe K; Chen E; Nagashio K
ACS Appl Mater Interfaces; 2023 Jun; 15(22):26977-26984. PubMed ID: 37222246
[TBL] [Abstract][Full Text] [Related]
14. Lowering Contact Resistances of Two-Dimensional Semiconductors by Memristive Forming.
Wu Z; Zhu Y; Wang F; Ding C; Wang Y; Zhan X; He J; Wang Z
Nano Lett; 2022 Sep; 22(17):7094-7103. PubMed ID: 36053055
[TBL] [Abstract][Full Text] [Related]
15. Reversible Semiconducting-to-Metallic Phase Transition in Chemical Vapor Deposition Grown Monolayer WSe2 and Applications for Devices.
Ma Y; Liu B; Zhang A; Chen L; Fathi M; Shen C; Abbas AN; Ge M; Mecklenburg M; Zhou C
ACS Nano; 2015 Jul; 9(7):7383-91. PubMed ID: 26125321
[TBL] [Abstract][Full Text] [Related]
16. Impact of Rh, Ru, and Pd Leads and Contact Topologies on Performance of WSe
Chung CH; Lin CY; Liu HY; Nian SE; Chen YT; Tsai CE
Materials (Basel); 2024 Jun; 17(11):. PubMed ID: 38893929
[TBL] [Abstract][Full Text] [Related]
17. Improved Contacts and Device Performance in MoS
Andrews K; Bowman A; Rijal U; Chen PY; Zhou Z
ACS Nano; 2020 May; 14(5):6232-6241. PubMed ID: 32320204
[TBL] [Abstract][Full Text] [Related]
18. Recessed-Channel WSe
Lee D; Choi Y; Kim J; Kim J
ACS Nano; 2022 May; 16(5):8484-8492. PubMed ID: 35575475
[TBL] [Abstract][Full Text] [Related]
19. Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts.
Yamamoto M; Nakaharai S; Ueno K; Tsukagoshi K
Nano Lett; 2016 Apr; 16(4):2720-7. PubMed ID: 26963588
[TBL] [Abstract][Full Text] [Related]
20. Scaling of MoS
Tian J; Wang Q; Huang X; Tang J; Chu Y; Wang S; Shen C; Zhao Y; Li N; Liu J; Ji Y; Huang B; Peng Y; Yang R; Yang W; Watanabe K; Taniguchi T; Bai X; Shi D; Du L; Zhang G
Nano Lett; 2023 Apr; 23(7):2764-2770. PubMed ID: 37010357
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]