These tools will no longer be maintained as of December 31, 2024. Archived website can be found here. PubMed4Hh GitHub repository can be found here. Contact NLM Customer Service if you have questions.


BIOMARKERS

Molecular Biopsy of Human Tumors

- a resource for Precision Medicine *

132 related articles for article (PubMed ID: 37814799)

  • 1. Efficiency enhancement mechanism of piezoelectric effect in long wavelength InGaN-based LED.
    Liu L; Feng Q; Zhang Y; Zhu X; Chen L; Xiong Z
    Phys Chem Chem Phys; 2023 Oct; 25(40):27774-27782. PubMed ID: 37814799
    [TBL] [Abstract][Full Text] [Related]  

  • 2. Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes.
    Zhao P; Zhao H
    Opt Express; 2012 Sep; 20 Suppl 5():A765-76. PubMed ID: 23037543
    [TBL] [Abstract][Full Text] [Related]  

  • 3. Improving the internal quantum efficiency of QD/QW hybrid structures by increasing the GaN barrier thickness.
    Jia Z; Hao X; Lu T; Dong H; Jia Z; Ma S; Liang J; Jia W; Xu B
    RSC Adv; 2020 Nov; 10(68):41443-41452. PubMed ID: 35516542
    [TBL] [Abstract][Full Text] [Related]  

  • 4. Role of Underlayer for Efficient Core-Shell InGaN QWs Grown on
    Kapoor A; Finot S; Grenier V; Robin E; Bougerol C; Bleuse J; Jacopin G; Eymery J; Durand C
    ACS Appl Mater Interfaces; 2020 Apr; 12(16):19092-19101. PubMed ID: 32208628
    [TBL] [Abstract][Full Text] [Related]  

  • 5. Recent Advances in Nonpolar and Semipolar InGaN Light-Emitting Diodes (LEDs).
    Jang J; Woo S; Min D; Nam O
    J Nanosci Nanotechnol; 2015 Mar; 15(3):1895-906. PubMed ID: 26413605
    [TBL] [Abstract][Full Text] [Related]  

  • 6. Comparison of Strain in GaN-Based Blue Light-Emitting Diode Grown on Silicon(111) and Sapphire Substrates.
    Jeon KS; Sung JH; Lee MW; Song HY; Lee EA; Kim SO; Choi HJ; Shin HY; Park WH; Jang YI; Kang MG; Choi YH; Lee JS; Ko DH; Ryu HY
    J Nanosci Nanotechnol; 2015 Jul; 15(7):5264-6. PubMed ID: 26373120
    [TBL] [Abstract][Full Text] [Related]  

  • 7. Effect of the AlN strain compensation layer on InGaN quantum well red-light-emitting diodes beyond epitaxy.
    Liu Z; Nong M; Lu Y; Cao H; Yuvaraja S; Xiao N; Alnakhli Z; Aguileta Vázquez RR; Li X
    Opt Lett; 2022 Dec; 47(23):6229-6232. PubMed ID: 37219213
    [TBL] [Abstract][Full Text] [Related]  

  • 8. Mapping piezoelectric-field distribution in gallium nitride with scanning second-harmonic generation microscopy.
    Sun CK; Chu SW; Tai SP; Keller S; Abare A; Mishra UK; DenBaars SP
    Scanning; 2001; 23(3):182-92. PubMed ID: 11405303
    [TBL] [Abstract][Full Text] [Related]  

  • 9. Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells.
    Zhao H; Liu G; Zhang J; Poplawsky JD; Dierolf V; Tansu N
    Opt Express; 2011 Jul; 19 Suppl 4():A991-A1007. PubMed ID: 21747571
    [TBL] [Abstract][Full Text] [Related]  

  • 10. Effect of same-temperature GaN cap layer on the InGaN/GaN multiquantum well of green light-emitting diode on silicon substrate.
    Zheng C; Wang L; Mo C; Fang W; Jiang F
    ScientificWorldJournal; 2013; 2013():538297. PubMed ID: 24369453
    [TBL] [Abstract][Full Text] [Related]  

  • 11. Effect of Sapphire Substrate Thickness on the Characteristics of 450 nm InGaN/GaN Multi-Quantum Well Light-Emitting Diodes.
    Tawfik WZ; Bea SJ; Yang SB; Ryu SW; Lee JK
    J Nanosci Nanotechnol; 2015 Jul; 15(7):5140-3. PubMed ID: 26373092
    [TBL] [Abstract][Full Text] [Related]  

  • 12. Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer.
    Zhou Q; Wang H; Xu M; Zhang XC
    Nanomaterials (Basel); 2018 Jul; 8(7):. PubMed ID: 29987245
    [TBL] [Abstract][Full Text] [Related]  

  • 13. Monolithically integrated white light LEDs on (11-22) semi-polar GaN templates.
    Poyiatzis N; Athanasiou M; Bai J; Gong Y; Wang T
    Sci Rep; 2019 Feb; 9(1):1383. PubMed ID: 30718528
    [TBL] [Abstract][Full Text] [Related]  

  • 14. Highly polarized photoluminescence from c-plane InGaN/GaN multiple quantum wells on stripe-shaped cavity-engineered sapphire substrate.
    Kim J; Lee S; Oh J; Ryu J; Park Y; Park SH; Yoon E
    Sci Rep; 2019 Jun; 9(1):8282. PubMed ID: 31164674
    [TBL] [Abstract][Full Text] [Related]  

  • 15. Effect of strain relaxation in InGaN/GaN multi-quantum wells with self-assembled Pt nanoclusters.
    Park AH; Oh TS; Seo TH; Lee SB; Lee GH; Suh EK
    J Nanosci Nanotechnol; 2014 Nov; 14(11):8347-51. PubMed ID: 25958526
    [TBL] [Abstract][Full Text] [Related]  

  • 16. Enhanced Solar Cell Conversion Efficiency of InGaN/GaN Multiple Quantum Wells by Piezo-Phototronic Effect.
    Jiang C; Jing L; Huang X; Liu M; Du C; Liu T; Pu X; Hu W; Wang ZL
    ACS Nano; 2017 Sep; 11(9):9405-9412. PubMed ID: 28872837
    [TBL] [Abstract][Full Text] [Related]  

  • 17. High performance electron blocking layer-free InGaN/GaN nanowire white-light-emitting diodes.
    Jain B; Velpula RT; Thang Bui HQ; Nguyen HD; Lenka TR; Nguyen TK; Nguyen HPT
    Opt Express; 2020 Jan; 28(1):665-675. PubMed ID: 32118989
    [TBL] [Abstract][Full Text] [Related]  

  • 18. [Optical characteristics of InGaN/GaN light emitting diodes on patterned sapphire substrate].
    Yan J; Zhong CT; Yu TJ; Xu CL; Tao YB; Zhang GY
    Guang Pu Xue Yu Guang Pu Fen Xi; 2012 Jan; 32(1):7-10. PubMed ID: 22497115
    [TBL] [Abstract][Full Text] [Related]  

  • 19. Effective suppression of efficiency droop in GaN-based light-emitting diodes: role of significant reduction of carrier density and built-in field.
    Yoo YS; Na JH; Son SJ; Cho YH
    Sci Rep; 2016 Oct; 6():34586. PubMed ID: 27756916
    [TBL] [Abstract][Full Text] [Related]  

  • 20. Influence of Low-Temperature Cap Layer Thickness on Luminescence Characteristics of Green InGaN/GaN Quantum Wells.
    Sun H; Chen Y; Ben Y; Zhang H; Zhao Y; Jin Z; Li G; Zhou M
    Materials (Basel); 2023 Feb; 16(4):. PubMed ID: 36837187
    [TBL] [Abstract][Full Text] [Related]  

    [Next]    [New Search]
    of 7.