140 related articles for article (PubMed ID: 37942456)
1. Computational-fitting method for mobility extraction in GaN HEMT.
Chang KC; Feng X; Liu H; Liu K; Lin X; Li L
RSC Adv; 2023 Oct; 13(46):32694-32698. PubMed ID: 37942456
[TBL] [Abstract][Full Text] [Related]
2. A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al
Chen L; Lu Z; Fu C; Bi Z; Que M; Sun J; Sun Y
Micromachines (Basel); 2024 Jan; 15(1):. PubMed ID: 38258220
[TBL] [Abstract][Full Text] [Related]
3. Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors.
Wang Z; Nan J; Tian Z; Liu P; Wu Y; Zhang J
Micromachines (Basel); 2023 Dec; 15(1):. PubMed ID: 38258199
[TBL] [Abstract][Full Text] [Related]
4. Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review.
Haziq M; Falina S; Manaf AA; Kawarada H; Syamsul M
Micromachines (Basel); 2022 Dec; 13(12):. PubMed ID: 36557432
[TBL] [Abstract][Full Text] [Related]
5. Thermal property evaluation of a 2.5D integration method with device level microchannel direct cooling for a high-power GaN HEMT device.
Lian T; Xia Y; Wang Z; Yang X; Fu Z; Kong X; Lin S; Ma S
Microsyst Nanoeng; 2022; 8():119. PubMed ID: 36389055
[TBL] [Abstract][Full Text] [Related]
6. Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer.
Zhu S; Jia H; Li T; Tong Y; Liang Y; Wang X; Zeng T; Yang Y
Micromachines (Basel); 2019 Jul; 10(7):. PubMed ID: 31269635
[TBL] [Abstract][Full Text] [Related]
7. Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study.
Kang WS; Choi JH; Kim D; Kim JH; Lee JH; Min BG; Kang DM; Choi JH; Kim HS
Micromachines (Basel); 2023 Dec; 15(1):. PubMed ID: 38258177
[TBL] [Abstract][Full Text] [Related]
8. Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al
Chiu HC; Liu CH; Huang CR; Chiu CC; Wang HC; Kao HL; Lin SY; Chien FT
Membranes (Basel); 2021 Sep; 11(10):. PubMed ID: 34677492
[TBL] [Abstract][Full Text] [Related]
9. Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator.
Chang SJ; Kim DS; Kim TW; Bae Y; Jung HW; Choi IG; Noh YS; Lee SH; Kim SI; Ahn HK; Kang DM; Lim JW
Nanomaterials (Basel); 2023 Feb; 13(5):. PubMed ID: 36903774
[TBL] [Abstract][Full Text] [Related]
10. Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT.
Khediri A; Talbi A; Jaouad A; Maher H; Soltani A
Micromachines (Basel); 2021 Oct; 12(11):. PubMed ID: 34832696
[TBL] [Abstract][Full Text] [Related]
11. Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors.
Shih HY; Chu FC; Das A; Lee CY; Chen MJ; Lin RM
Nanoscale Res Lett; 2016 Dec; 11(1):235. PubMed ID: 27129687
[TBL] [Abstract][Full Text] [Related]
12. Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors.
Dai P; Wang S; Lu H
Micromachines (Basel); 2024 Feb; 15(3):. PubMed ID: 38542568
[TBL] [Abstract][Full Text] [Related]
13. Aluminum gallium nitride (GaN)/GaN high electron mobility transistor-based sensors for glucose detection in exhaled breath condensate.
Chu BH; Kang BS; Hung SC; Chen KH; Ren F; Sciullo A; Gila BP; Pearton SJ
J Diabetes Sci Technol; 2010 Jan; 4(1):171-9. PubMed ID: 20167182
[TBL] [Abstract][Full Text] [Related]
14. Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al
Huang CY; Mazumder S; Lin PC; Lee KW; Wang YH
Materials (Basel); 2022 Oct; 15(19):. PubMed ID: 36234237
[TBL] [Abstract][Full Text] [Related]
15. Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation.
Chen R; Liang Y; Han J; Lu Q; Chen Q; Wang Z; Wang H; Wang X; Yuan R
Nanomaterials (Basel); 2022 Jun; 12(13):. PubMed ID: 35807962
[TBL] [Abstract][Full Text] [Related]
16. Thermal Analysis and Operational Characteristics of an AlGaN/GaN High Electron Mobility Transistor with Copper-Filled Structures: A Simulation Study.
Jang KW; Hwang IT; Kim HJ; Lee SH; Lim JW; Kim HS
Micromachines (Basel); 2019 Dec; 11(1):. PubMed ID: 31906083
[TBL] [Abstract][Full Text] [Related]
17. Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT.
Qin Y; Chai C; Li F; Liang Q; Wu H; Yang Y
Micromachines (Basel); 2022 Jan; 13(1):. PubMed ID: 35056271
[TBL] [Abstract][Full Text] [Related]
18. Investigation of Normally-Off p-GaN/AlGaN/GaN HEMTs Using a Self-Terminating Etching Technique with Multi-Finger Architecture Modulation for High Power Application.
Chang YC; Ho YL; Huang TY; Huang DW; Wu CH
Micromachines (Basel); 2021 Apr; 12(4):. PubMed ID: 33919816
[TBL] [Abstract][Full Text] [Related]
19. An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology.
Alim MA; Gaquiere C; Crupi G
Micromachines (Basel); 2021 May; 12(5):. PubMed ID: 34065962
[TBL] [Abstract][Full Text] [Related]
20. An Improved P-Type Doped Barrier Surface AlGaN/GaN High Electron Mobility Transistor with High Power-Added Efficiency.
Jia H; Wang X; Dong M; Zhu S; Yang Y
Micromachines (Basel); 2021 Aug; 12(9):. PubMed ID: 34577679
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]