153 related articles for article (PubMed ID: 37944189)
1. Selective area growth of in-plane InAs nanowires and nanowire networks on Si substrates by molecular-beam epitaxy.
Liu L; Wen L; He F; Zhuo R; Pan D; Zhao J
Nanotechnology; 2023 Nov; 35(6):. PubMed ID: 37944189
[TBL] [Abstract][Full Text] [Related]
2. Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy.
So H; Pan D; Li L; Zhao J
Nanotechnology; 2017 Mar; 28(13):135704. PubMed ID: 28256450
[TBL] [Abstract][Full Text] [Related]
3. Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy.
Koblmüller G; Hertenberger S; Vizbaras K; Bichler M; Bao F; Zhang JP; Abstreiter G
Nanotechnology; 2010 Sep; 21(36):365602. PubMed ID: 20702932
[TBL] [Abstract][Full Text] [Related]
4. High-quality vertically aligned InAs nanowires grown by molecular-beam epitaxy using Ag-In alloy segregation.
Liu L; Pan D; Wen L; Zhuo R; Zhao J
Nanotechnology; 2023 Mar; 34(22):. PubMed ID: 36827703
[TBL] [Abstract][Full Text] [Related]
5. Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks.
Aseev P; Fursina A; Boekhout F; Krizek F; Sestoft JE; Borsoi F; Heedt S; Wang G; Binci L; Martí-Sánchez S; Swoboda T; Koops R; Uccelli E; Arbiol J; Krogstrup P; Kouwenhoven LP; Caroff P
Nano Lett; 2019 Jan; 19(1):218-227. PubMed ID: 30521341
[TBL] [Abstract][Full Text] [Related]
6. Selective-Area Epitaxy of InGaAsP Buffer Multilayer for In-Plane InAs Nanowire Integration.
Zannier V; Li A; Rossi F; Yadav S; Petersson K; Sorba L
Materials (Basel); 2022 Mar; 15(7):. PubMed ID: 35407877
[TBL] [Abstract][Full Text] [Related]
7. Uniform and position-controlled InAs nanowires on 2" Si substrates for transistor applications.
Ghalamestani SG; Johansson S; Borg BM; Lind E; Dick KA; Wernersson LE
Nanotechnology; 2012 Jan; 23(1):015302. PubMed ID: 22155896
[TBL] [Abstract][Full Text] [Related]
8. Dimension Engineering of High-Quality InAs Nanostructures on a Wafer Scale.
Pan D; Wang JY; Zhang W; Zhu L; Su X; Fan F; Fu Y; Huang S; Wei D; Zhang L; Sui M; Yartsev A; Xu H; Zhao J
Nano Lett; 2019 Mar; 19(3):1632-1642. PubMed ID: 30779588
[TBL] [Abstract][Full Text] [Related]
9. Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition.
Vilasam AGS; Adhikari S; Gupta B; Balendhran S; Higashitarumizu N; Tournet J; Li L; Javey A; Crozier KB; Karuturi S; Jagadish C; Tan HH
Nanotechnology; 2023 Sep; 34(49):. PubMed ID: 37625398
[TBL] [Abstract][Full Text] [Related]
10. Catalyst orientation-induced growth of defect-free zinc-blende structured ⟨001̅⟩ InAs nanowires.
Zhang Z; Zheng K; Lu ZY; Chen PP; Lu W; Zou J
Nano Lett; 2015 Feb; 15(2):876-82. PubMed ID: 25580886
[TBL] [Abstract][Full Text] [Related]
11. Defect-free zinc-blende structured InAs nanowires realized by in situ two V/III ratio growth in molecular beam epitaxy.
Zhang Z; Lu ZY; Chen PP; Lu W; Zou J
Nanoscale; 2015 Aug; 7(29):12592-7. PubMed ID: 26145435
[TBL] [Abstract][Full Text] [Related]
12. Self-Catalyzed InSb/InAs Quantum Dot Nanowires.
Arif O; Zannier V; Rossi F; Ercolani D; Beltram F; Sorba L
Nanomaterials (Basel); 2021 Jan; 11(1):. PubMed ID: 33450840
[TBL] [Abstract][Full Text] [Related]
13. Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten.
Svensson J; Olausson P; Menon H; Lehmann S; Lind E; Borg M
Nano Lett; 2023 Jun; 23(11):4756-4761. PubMed ID: 37227403
[TBL] [Abstract][Full Text] [Related]
14. Semiconductor-Ferromagnetic Insulator-Superconductor Nanowires: Stray Field and Exchange Field.
Liu Y; Vaitiekėnas S; Martí-Sánchez S; Koch C; Hart S; Cui Z; Kanne T; Khan SA; Tanta R; Upadhyay S; Cachaza ME; Marcus CM; Arbiol J; Moler KA; Krogstrup P
Nano Lett; 2020 Jan; 20(1):456-462. PubMed ID: 31769993
[TBL] [Abstract][Full Text] [Related]
15. Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors.
Anyebe EA; Sandall I; Jin ZM; Sanchez AM; Rajpalke MK; Veal TD; Cao YC; Li HD; Harvey R; Zhuang QD
Sci Rep; 2017 Apr; 7():46110. PubMed ID: 28393845
[TBL] [Abstract][Full Text] [Related]
16. Catalyst-free growth of InAs nanowires on Si (111) by CBE.
Gomes UP; Ercolani D; Sibirev NV; Gemmi M; Dubrovskii VG; Beltram F; Sorba L
Nanotechnology; 2015 Oct; 26(41):415604. PubMed ID: 26404459
[TBL] [Abstract][Full Text] [Related]
17. Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition.
Ji X; Yang X; Yang T
Nanoscale Res Lett; 2017 Dec; 12(1):428. PubMed ID: 28655220
[TBL] [Abstract][Full Text] [Related]
18. Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular-beam epitaxy.
Wen L; Pan D; Liao D; Zhao J
Nanotechnology; 2020 Apr; 31(15):155601. PubMed ID: 31783375
[TBL] [Abstract][Full Text] [Related]
19. Conditions for high yield of selective-area epitaxy InAs nanowires on SiO x /Si(111) substrates.
Robson MT; Dubrovskii VG; LaPierre RR
Nanotechnology; 2015 Nov; 26(46):465301. PubMed ID: 26508403
[TBL] [Abstract][Full Text] [Related]
20. MBE growth of Al/InAs and Nb/InAs superconducting hybrid nanowire structures.
Güsken NA; Rieger T; Zellekens P; Bennemann B; Neumann E; Lepsa MI; Schäpers T; Grützmacher D
Nanoscale; 2017 Nov; 9(43):16735-16741. PubMed ID: 29068026
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
