141 related articles for article (PubMed ID: 38004899)
1. Exploring the Potential of GaN-Based Power HEMTs with Coherent Channel.
Chen X; Wang F; Wang Z; Huang JK
Micromachines (Basel); 2023 Oct; 14(11):. PubMed ID: 38004899
[TBL] [Abstract][Full Text] [Related]
2. Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications.
Cui P; Zeng Y
Sci Rep; 2022 Oct; 12(1):16683. PubMed ID: 36202953
[TBL] [Abstract][Full Text] [Related]
3. Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO
Kim HS; Kang MJ; Kim JJ; Seo KS; Cha HY
Materials (Basel); 2020 Mar; 13(7):. PubMed ID: 32230767
[TBL] [Abstract][Full Text] [Related]
4. Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage.
Xia X; Guo Z; Sun H
Micromachines (Basel); 2021 Oct; 12(11):. PubMed ID: 34832730
[TBL] [Abstract][Full Text] [Related]
5. Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs.
Wang H; Shi Y; Xin Y; Liu C; Lu G; Huang Y
Micromachines (Basel); 2022 Jan; 13(2):. PubMed ID: 35208300
[TBL] [Abstract][Full Text] [Related]
6. On the Baliga's Figure-Of-Merits (BFOM) Enhancement of a Novel GaN Nano-Pillar Vertical Field Effect Transistor (FET) with 2DEG Channel and Patterned Substrate.
Wang Z; Wang Z; Zhang Z; Yang D; Yao Y
Nanoscale Res Lett; 2019 Apr; 14(1):128. PubMed ID: 30972597
[TBL] [Abstract][Full Text] [Related]
7. Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors.
Wang Z; Nan J; Tian Z; Liu P; Wu Y; Zhang J
Micromachines (Basel); 2023 Dec; 15(1):. PubMed ID: 38258199
[TBL] [Abstract][Full Text] [Related]
8. Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length.
Chien CY; Wu WH; You YH; Lin JH; Lee CY; Hsu WC; Kuan CH; Lin RM
Nanoscale Res Lett; 2017 Dec; 12(1):420. PubMed ID: 28629208
[TBL] [Abstract][Full Text] [Related]
9. A Novel Step-Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance.
Liu J; Guo Y; Zhang J; Yao J; Li M; Zhang M; Chen J; Huang X; Huang C
Micromachines (Basel); 2021 Oct; 12(10):. PubMed ID: 34683299
[TBL] [Abstract][Full Text] [Related]
10. Enhanced Operational Characteristics Attained by Applying HfO
Choi JH; Kang WS; Kim D; Kim JH; Lee JH; Kim KY; Min BG; Kang DM; Kim HS
Micromachines (Basel); 2023 May; 14(6):. PubMed ID: 37374686
[TBL] [Abstract][Full Text] [Related]
11. Thermal Analysis of Flip-Chip Bonding Designs for GaN Power HEMTs with an On-Chip Heat-Spreading Layer.
Hong KB; Peng CY; Lin WC; Chen KL; Chen SC; Kuo HC; Chang EY; Lin CH
Micromachines (Basel); 2023 Feb; 14(3):. PubMed ID: 36984926
[TBL] [Abstract][Full Text] [Related]
12. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.
Lee YJ; Yao YC; Huang CY; Lin TY; Cheng LL; Liu CY; Wang MT; Hwang JM
Nanoscale Res Lett; 2014; 9(1):433. PubMed ID: 25206318
[TBL] [Abstract][Full Text] [Related]
13. Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor.
Liu CH; Huang CR; Wang HC; Kang YJ; Chiu HC; Kao HL; Chu KH; Kuo HC; Chen CT; Chang KJ
Micromachines (Basel); 2022 Sep; 13(9):. PubMed ID: 36144177
[TBL] [Abstract][Full Text] [Related]
14. Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review.
Zou X; Yang J; Qiao Q; Zou X; Chen J; Shi Y; Ren K
Micromachines (Basel); 2023 Oct; 14(11):. PubMed ID: 38004901
[TBL] [Abstract][Full Text] [Related]
15. Investigation on GaN HEMTs Based Three-Phase STATCOM with Hybrid Control Scheme.
Ma CT; Gu ZH
Micromachines (Basel); 2021 Apr; 12(4):. PubMed ID: 33924185
[TBL] [Abstract][Full Text] [Related]
16. Study of High-Performance GaN-Based Trench CAVET with Stepped Doping Microstructure.
Li Y; Xu L; Guo Z; Sun H
Micromachines (Basel); 2022 Aug; 13(8):. PubMed ID: 36014195
[TBL] [Abstract][Full Text] [Related]
17. Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor.
Wang Z; Cao Y; Zhang X; Chen C; Wu L; Ma M; Lv H; Lv L; Zheng X; Tian W; Ma X; Hao Y
Micromachines (Basel); 2023 Oct; 14(10):. PubMed ID: 37893385
[TBL] [Abstract][Full Text] [Related]
18. Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs.
Guo H; Chen T; Shi S
Micromachines (Basel); 2020 Jan; 11(1):. PubMed ID: 31936651
[TBL] [Abstract][Full Text] [Related]
19. DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure.
Hong S; Rana Au; Heo JW; Kim HS
J Nanosci Nanotechnol; 2015 Oct; 15(10):7467-71. PubMed ID: 26726352
[TBL] [Abstract][Full Text] [Related]
20. Exploring an Approach toward the Intrinsic Limits of GaN Electronics.
Jiang S; Cai Y; Feng P; Shen S; Zhao X; Fletcher P; Esendag V; Lee KB; Wang T
ACS Appl Mater Interfaces; 2020 Mar; 12(11):12949-12954. PubMed ID: 32090550
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
