150 related articles for article (PubMed ID: 38004901)
1. Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review.
Zou X; Yang J; Qiao Q; Zou X; Chen J; Shi Y; Ren K
Micromachines (Basel); 2023 Oct; 14(11):. PubMed ID: 38004901
[TBL] [Abstract][Full Text] [Related]
2. Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors.
Wang Z; Nan J; Tian Z; Liu P; Wu Y; Zhang J
Micromachines (Basel); 2023 Dec; 15(1):. PubMed ID: 38258199
[TBL] [Abstract][Full Text] [Related]
3. Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices.
Calzolaro A; Mikolajick T; Wachowiak A
Materials (Basel); 2022 Jan; 15(3):. PubMed ID: 35160737
[TBL] [Abstract][Full Text] [Related]
4. Analysis of Trapping Effect on Large-Signal Characteristics of GaN HEMTs Using X-Parameters and UV Illumination.
Chen KM; Lin CJ; Chuang CW; Pai HC; Chang EY; Huang GW
Micromachines (Basel); 2023 May; 14(5):. PubMed ID: 37241634
[TBL] [Abstract][Full Text] [Related]
5. Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs.
Ma M; Cao Y; Lv H; Wang Z; Zhang X; Chen C; Wu L; Lv L; Zheng X; Tian W; Ma X; Hao Y
Micromachines (Basel); 2022 Dec; 14(1):. PubMed ID: 36677140
[TBL] [Abstract][Full Text] [Related]
6. An Overview of Normally-Off GaN-Based High Electron Mobility Transistors.
Roccaforte F; Greco G; Fiorenza P; Iucolano F
Materials (Basel); 2019 May; 12(10):. PubMed ID: 31096689
[TBL] [Abstract][Full Text] [Related]
7. Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review.
Haziq M; Falina S; Manaf AA; Kawarada H; Syamsul M
Micromachines (Basel); 2022 Dec; 13(12):. PubMed ID: 36557432
[TBL] [Abstract][Full Text] [Related]
8. Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review.
Zhan T; Xu M; Cao Z; Zheng C; Kurita H; Narita F; Wu YJ; Xu Y; Wang H; Song M; Wang W; Zhou Y; Liu X; Shi Y; Jia Y; Guan S; Hanajiri T; Maekawa T; Okino A; Watanabe T
Micromachines (Basel); 2023 Nov; 14(11):. PubMed ID: 38004933
[TBL] [Abstract][Full Text] [Related]
9. Impact of Gamma Radiation on Dynamic R
Martínez PJ; Maset E; Martín-Holgado P; Morilla Y; Gilabert D; Sanchis-Kilders E
Materials (Basel); 2019 Aug; 12(17):. PubMed ID: 31466249
[TBL] [Abstract][Full Text] [Related]
10. Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization.
Li X; Wang M; Zhang J; Gao R; Wang H; Yang W; Yuan J; You S; Chang J; Liu Z; Hao Y
Micromachines (Basel); 2023 May; 14(5):. PubMed ID: 37241665
[TBL] [Abstract][Full Text] [Related]
11. Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO
Kim HS; Kang MJ; Kim JJ; Seo KS; Cha HY
Materials (Basel); 2020 Mar; 13(7):. PubMed ID: 32230767
[TBL] [Abstract][Full Text] [Related]
12. On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs.
Zagni N; Chini A; Puglisi FM; Pavan P; Verzellesi G
Micromachines (Basel); 2021 Jun; 12(6):. PubMed ID: 34208780
[TBL] [Abstract][Full Text] [Related]
13. Investigation on GaN HEMTs Based Three-Phase STATCOM with Hybrid Control Scheme.
Ma CT; Gu ZH
Micromachines (Basel); 2021 Apr; 12(4):. PubMed ID: 33924185
[TBL] [Abstract][Full Text] [Related]
14. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.
Lee YJ; Yao YC; Huang CY; Lin TY; Cheng LL; Liu CY; Wang MT; Hwang JM
Nanoscale Res Lett; 2014; 9(1):433. PubMed ID: 25206318
[TBL] [Abstract][Full Text] [Related]
15. Effect of backside dry etching on the device performance of AlGaN/GaN HEMTs.
Ji K; Cui X; Chen J; Guo Q; Jiang B; Wang B; Sun W; Hu W; Hua Q
Nanotechnology; 2021 Jun; 32(35):. PubMed ID: 34010814
[TBL] [Abstract][Full Text] [Related]
16. Diamond/GaN HEMTs: Where from and Where to?
Mendes JC; Liehr M; Li C
Materials (Basel); 2022 Jan; 15(2):. PubMed ID: 35057131
[TBL] [Abstract][Full Text] [Related]
17. AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics.
Jorudas J; Šimukovič A; Dub M; Sakowicz M; Prystawko P; Indrišiūnas S; Kovalevskij V; Rumyantsev S; Knap W; Kašalynas I
Micromachines (Basel); 2020 Dec; 11(12):. PubMed ID: 33419371
[TBL] [Abstract][Full Text] [Related]
18. Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration.
Hsu LH; Lai YY; Tu PT; Langpoklakpam C; Chang YT; Huang YW; Lee WC; Tzou AJ; Cheng YJ; Lin CH; Kuo HC; Chang EY
Micromachines (Basel); 2021 Sep; 12(10):. PubMed ID: 34683210
[TBL] [Abstract][Full Text] [Related]
19. Improved
Xie X; Wang Q; Pan M; Zhang P; Wang L; Yang Y; Huang H; Hu X; Xu M
Nanomaterials (Basel); 2024 Mar; 14(6):. PubMed ID: 38535670
[TBL] [Abstract][Full Text] [Related]
20. Impact of Charge-Trapping Effects on Reliability Instability in Al
Amir W; Chakraborty S; Kwon HM; Kim TW
Materials (Basel); 2023 Jun; 16(12):. PubMed ID: 37374651
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
