144 related articles for article (PubMed ID: 38004961)
1. Comprehensive Comparison of MOCVD- and LPCVD-SiN
Deng L; Zhou L; Lu H; Yang L; Yu Q; Zhang M; Wu M; Hou B; Ma X; Hao Y
Micromachines (Basel); 2023 Nov; 14(11):. PubMed ID: 38004961
[TBL] [Abstract][Full Text] [Related]
2. Improved Electrical Properties of AlGaN/GaN High-Electron-Mobility Transistors by
Siddique A; Ahmed R; Anderson J; Holtz M; Piner EL
ACS Appl Mater Interfaces; 2021 Apr; 13(15):18264-18273. PubMed ID: 33823581
[No Abstract] [Full Text] [Related]
3. Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiN
Gao X; Guo H; Wang R; Pan D; Chen P; Chen D; Lu H; Zhang R; Zheng Y
Micromachines (Basel); 2022 Aug; 13(9):. PubMed ID: 36144019
[TBL] [Abstract][Full Text] [Related]
4. Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT.
Wang C; Kim NY
Nanoscale Res Lett; 2012 Feb; 7(1):107. PubMed ID: 22313812
[TBL] [Abstract][Full Text] [Related]
5. Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications.
Lee MW; Chuang CW; Gamiz F; Chang EY; Lin YC
Micromachines (Basel); 2023 Dec; 15(1):. PubMed ID: 38258200
[TBL] [Abstract][Full Text] [Related]
6. High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiN
Yang C; Luo X; Sun T; Zhang A; Ouyang D; Deng S; Wei J; Zhang B
Nanoscale Res Lett; 2019 Jun; 14(1):191. PubMed ID: 31165332
[TBL] [Abstract][Full Text] [Related]
7. Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiN
Zhao D; He L; Wu L; Xiao Q; Liu C; Chen Y; He Z; Yang D; Lv M; Cheng Z
Micromachines (Basel); 2024 Jan; 15(2):. PubMed ID: 38398901
[TBL] [Abstract][Full Text] [Related]
8. Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors.
Lin YS; Lin SF
Micromachines (Basel); 2020 Dec; 12(1):. PubMed ID: 33374110
[TBL] [Abstract][Full Text] [Related]
9. Enhanced Operational Characteristics Attained by Applying HfO
Choi JH; Kang WS; Kim D; Kim JH; Lee JH; Kim KY; Min BG; Kang DM; Kim HS
Micromachines (Basel); 2023 May; 14(6):. PubMed ID: 37374686
[TBL] [Abstract][Full Text] [Related]
10. AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO
Lin YS; Lu CC
Micromachines (Basel); 2023 May; 14(6):. PubMed ID: 37374767
[TBL] [Abstract][Full Text] [Related]
11. Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications.
Zagni N; Verzellesi G; Chini A
Micromachines (Basel); 2022 Dec; 13(12):. PubMed ID: 36557543
[TBL] [Abstract][Full Text] [Related]
12. A high thermal stability ohmic contact for GaN-based devices.
Wu CY; Chao TS; Chou YC
Nanoscale Adv; 2023 Sep; 5(19):5361-5366. PubMed ID: 37767046
[TBL] [Abstract][Full Text] [Related]
13. Effect of backside dry etching on the device performance of AlGaN/GaN HEMTs.
Ji K; Cui X; Chen J; Guo Q; Jiang B; Wang B; Sun W; Hu W; Hua Q
Nanotechnology; 2021 Jun; 32(35):. PubMed ID: 34010814
[TBL] [Abstract][Full Text] [Related]
14. Boron Nitride as a Passivation Capping Layer for AlGaN/GaN High Electron Mobility Transistors.
Lee GH; Park AH; Lim JH; Lee CH; Jeon DW; Kim YB; Lee J; Yang JW; Suh EK; Seo TH
J Nanosci Nanotechnol; 2020 Jul; 20(7):4450-4453. PubMed ID: 31968494
[TBL] [Abstract][Full Text] [Related]
15. DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure.
Hong S; Rana Au; Heo JW; Kim HS
J Nanosci Nanotechnol; 2015 Oct; 15(10):7467-71. PubMed ID: 26726352
[TBL] [Abstract][Full Text] [Related]
16. Thermal Behavior of an AlGaN/GaN-Based Schottky Barrier Diode on Diamond and Silicon Substrates.
Kim ZS; Lee HS; Bae SB; Ahn H; Lee SH; Lim JW; Kang DM
J Nanosci Nanotechnol; 2021 Aug; 21(8):4429-4433. PubMed ID: 33714339
[TBL] [Abstract][Full Text] [Related]
17. Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO
Kim HS; Kang MJ; Kim JJ; Seo KS; Cha HY
Materials (Basel); 2020 Mar; 13(7):. PubMed ID: 32230767
[TBL] [Abstract][Full Text] [Related]
18. Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs.
Ma M; Cao Y; Lv H; Wang Z; Zhang X; Chen C; Wu L; Lv L; Zheng X; Tian W; Ma X; Hao Y
Micromachines (Basel); 2022 Dec; 14(1):. PubMed ID: 36677140
[TBL] [Abstract][Full Text] [Related]
19. Analysis of Trapping Effect on Large-Signal Characteristics of GaN HEMTs Using X-Parameters and UV Illumination.
Chen KM; Lin CJ; Chuang CW; Pai HC; Chang EY; Huang GW
Micromachines (Basel); 2023 May; 14(5):. PubMed ID: 37241634
[TBL] [Abstract][Full Text] [Related]
20. High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage.
Zhang Y; Li Y; Wang J; Shen Y; Du L; Li Y; Wang Z; Xu S; Zhang J; Hao Y
Nanoscale Res Lett; 2020 May; 15(1):114. PubMed ID: 32436019
[TBL] [Abstract][Full Text] [Related]
[Next] [New Search]
